• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.288-289
• /
• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.2
• /
• pp.89-94
• /
• 2021

The mechanical reliability of flexible devices has become a major concern on their commercialization, where the importance of reliable bonding is highlighted. In terms of component materials' properties, it is important to consider thermal damage of polymer substrates that occupy large area of the flexible device. Therefore, room temperature bonding process is highly advantageous for implementing flexible device assemblies with mechanical reliability. Conventional epoxy resins for the bonding still require curing at high temperatures. Even after the curing procedure, the bonding joint loses flexibility and exhibits poor fatigue durability. To solve this problems, low-temperature and adhesive-free bonding are required. In this work, we develop a room temperature bonding process for polymer substrates using carbon nanotube heated by microwave irradiations. After depositing multiple-wall carbon nanotubes (MWNTs) on PET polymer substrates, they are heated locally with by microwave while the entire bonding specimen maintains room temperature and the heating induces mechanical entanglement of CNT-PET. The room temperature bonding was conducted for a PET/CNT/PET specimen at 600 watt of microwave power for 10 seconds. Thickness of the CNT bonding joint was very thin that it obtains flexibility as well. In order to evaluate the mechanical reliability of the joint specimen, we performed lap shear test, three-point bending test, and dynamic bending test, and confirmed excellent joint strength, flexibility, and bending durability from each test.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.30 no.11 s.254
• /
• pp.1494-1501
• /
• 2006

Mechanical and physical properties of a copper alloy for a liquid rocket engine(LRE) combustion chamber liner application were tested at various temperatures. All test specimens were heat treated with the condition they might experience during actual fabrication process of the LRE combustion chamber. Physical properties measured include thermal conductivity, specific heat and thermal expansion data. Uniaxial tension tests were preformed to get mechanical properties at several temperatures ranging from room temperature to 600$^{\circ}C$. The result demonstrated that yield stress and ultimate tensile stress of the copper alloy decreases considerably and strain hardening increases as the result of the heat treatment. Since the LRE combustion chamber operates at higher temperature over 400$^{\circ}C$, the copper alloy can exhibit time-dependent behavior. Strain rate, creep and stress relaxation tests were performed to check the time-dependent behavior of the copper alloy. Strain rate tests revealed that strain rate effect is negligible up to 400$^{\circ}C$ while stress-strain curve is changed at 500$^{\circ}C$ as the strain rate is changed. Creep tests were conducted at 250$^{\circ}C$ and 500$^{\circ}C$ and the secondary creep rate was found to be very small at both temperatures implying that creep effect is negligible for the combustion chamber liner because its operating time is quite short.

• Journal of the Korean Ceramic Society
• /
• v.35 no.4
• /
• pp.325-332
• /
• 1998

Crystalline TiO2 ultrafine powders were prepared simply by heating and stirring aqueous TiOCl2 solution with {{{{ {Ti }^{4+ } }} concentration of 0.5 M from room temperature to 10$0^{\circ}C$ under 1 atmoshpere. The crystallinity and the particle shape of TiO2 ultrafine powders obtained by simple precipitation method were analyzed us-ing XRD(X-ray diffractometer). SEM(scanning electron microscopy) and TEM(transmission electron mi-croscopy) TiO2 crystalline precipitate with rutile phases is fully formed at the temperatures of up to $65^{\circ}C$ and then TiO2 crystalline precipitate with anatase phase starts to be formed above temperatures $65^{\circ}C$ showing its full formation at 10$0^{\circ}C$ These behaviors of TiO2 crystalline precipitate directly from an aqueous TiOCl2 solution would be caused due to the existence of {{{{ OMICRON ^2+ }} ions from distilled water which oxydize TiOCl2 to TiO2 not hydrolyzing it to Ti(OH)4 Here thermodynamically stable TiO2 rutile phase generally formed at higher temperature is practically precipitated at lower temperatures in this study This may be due to the precipitation by very slow reaction enough to make TiO2 particles allocated into stable rutile structure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.05a
• /
• pp.88-92
• /
• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Journal of Biosystems Engineering
• /
• v.36 no.5
• /
• pp.319-325
• /
• 2011

This study was conducted to figure out the diagnosis basis of cooling performance depending on water amount in the refrigerant of air conditioner, which can be estimated by the temperatures and pressures along the refrigerant circulation line. A car air conditioner of SONATA III (Hyundai motor Co., Korea) was tested at maximum cooling condition at the engine speed of 1500 rpm in the room controlled at 33~$35^{\circ}C$ air temperature and 55~57% relative humidity conditionally. Measured variables were temperature differences between inlet and outlet pipe surfaces of the compressor, condenser, receive drier and evaporator; and high pressure and low pressure in the refrigerant circulation line; and temperature difference between inlet and outlet air of the cooling vent of evaporator. In this study, changes of the water amount in the refrigerant were correlated to the temperatures and pressure changes and also water amount caused poor cooling performance. As water amount increased in the refrigerant in the air conditioner, the performance of the cooling or the heat transfer became worse. Temporal variations of the surface temperature of the evaporator outlet pipe and the low-side pressure showed various patterns that could estimate the water amount. When the water amount caused bad cooling performance, the patterns of the temperature of the evaporator outlet pipe indicated irregular fluctuation greater than $5^{\circ}C$. When the diagnosis system is using just external sensors of the low-side pressure and the temperatures of inlet and outlet air of cooling vent of the evaporator, the precise pattern of bad cooling performance caused by excess water amount in the cooling line was irregular pressure fluctuation, 25 kPa under 120 kPa, and temperature, $12^{\circ}C$ and less.

• Preventive Nutrition and Food Science
• /
• v.7 no.2
• /
• pp.188-194
• /
• 2002

This study was carried out to observe changes in several detection factors derived from thermoluminescence (TL) of minerals separated from irradiated Korean perilla and sesame seeds during storage under normal room and darkroom conditions. The TL intensities of the first glow curves increased from 0 to 5 kGy but only slightly increase from 5 to 10 kGy. Maximum TL temperatures of the first glow curves in all irradiated samples were around 20$0^{\circ}C$, ranging from 150 to 25$0^{\circ}C$. Since the control (0 day of storage) glow curve ratios of G3 and G4, calculated from re-irradiated (1 kGy) sample were over 0.5, detection of irradiation was possible. However, because Gl ratios were below 0.1, they were classified as non-irradiated. There was n unique first glow curve shape that could be clearly seen in all irradiated samples, regardless of storage conditions, that was never seen in non-irradiated samples. In all samples, the maximum TL temperatures and shape of the second glow curve was in a lower temperature range than that of the first glow curve. Therefore, detection of irradiated Korean perilla and sesame seeds was possible fur up to 3 months after irradiation, regardless of storage conditions, by examining several TL detection factors; including TL intensity, glow curve ratios maximum TL temperatures, and the shapes of glow curves.

• Korean Journal of Materials Research
• /
• v.23 no.11
• /
• pp.613-619
• /
• 2013

$Cu_2ZnSn(S_x,Se_{1-x})_4$ (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from $520^{\circ}C$ to $580^{\circ}C$. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the $Mo(S_x,Se_{1-x})_2$ (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

• Bulletin of the Korean Chemical Society
• /
• v.30 no.6
• /
• pp.1267-1273
• /
• 2009

The correlation between the sintering temperature and dielectric properties in the $Nb^{5+}\;and\;Ta^{5+}$ doped BaTi$O_3$ solid solutions have been investigated. The samples were sintered at temperatures ranging from 1250 to 1350 ${^{\circ}C}$ for 4 h in air. SEM, XRD and SEM/EDS techniques were used to examine the structure of the samples with particular focus on the incorporation of $Nb^{5+}\;and\;Ta^{5+}$ ions into the BaTi$O_3$ crystal lattice. The X-ray diffraction peaks of (111), (200) and (002) planes of BaTi$O_3$ solid solution doped with different fractions of $Nb^{5+}\;and\;Ta^{5+}$ were investigated. The dielectric properties were analyzed and the relationship between the properties and structure of doped BaTi$O_3$ was established. The fine-grain and high density of the doped BaTi$O_3$ ceramics resulted in excellent dielectric properties. The dielectric properties of this solid solutions were improved by adding a small amount of dopants. The transition temperature of the 1.0 mole% $Ta^{5+}$ doped BaTi$O_3$ solid solution was $\sim$110 ${^{\circ}C}$ with a dielectric constant of 3000 at room temperature. At temperatures above the Curie temperatures, the dielectric constant followed the Curie-Weiss law.

• Journal of IKEEE
• /
• v.27 no.1
• /
• pp.19-24
• /
• 2023

Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.