• 한국음향학회지
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• 제42권6호
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• pp.491-499
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• 2023

해수면 거칠기에 의해 해수면 산란이 발생하면 통신신호의 주파수 확산과 통신채널 시변동성을 야기하여 통신성능을 악화시킨다. 수면 거칠기에 따른 통신채널의 시변동성 차이를 비교하기 위하여 한양대학교 해양음향공학연구실 수조에서 실험을 수행하였다. 수조에서 인위적인 수면 거칠기를 생성하고 대역폭에 따른 차이를 비교하기 위하여 3가지 대역폭을 갖는 통신신호를 사용하였다. 측정된 수면 거칠기는 레일리 파라미터로 변환하여 거칠기에 대한 파라미터로써 사용하였으며, 수면 경로의 시변 채널 특성은 도플러 확산과 상관시간을 이용하여 통계적 분석을 수행하였다. 수면 경로의 도플러 확산은 통신신호의 반송 주파수와 대역폭의 영향을 보정한 가중 유효 도플러 확산(Weighted Root Mean Square Doppler spread, w_fσ_ν)을 사용하였다. 수면 경로의 상관시간과 직접 경로와 수면 경로의 에너지 비율을 이용하여 전체 채널의 상관관계를 모의하고 측정된 전체 채널의 상관시간과 비교하였다. 본 연구에서는 해수면 거칠기에 따른 해수면 경로의 시변 채널특성을 이용하여 임의의 해양환경에서 효율적인 통신신호 설계를 위한 방법을 제안한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• Progress in Superconductivity
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• 제6권1호
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• pp.69-73
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• 2004

Ni alloy tape is electropolished to be used as a metal substrate for fabrication of IBAD (ion-Beam Assisted Deposition)-MgO texture template fur HTS coated conductor. Electropolishing is needed to obtain a very smooth surface of Ni alloy tape because the in-plane texture of templates is sensitive to the roughness of metal substrate. The critical current of YBCO coated conductor depends on the texture of YBCO that depends on the texture of the IBAD MgO layer. And so the smoothness of the metal substrate is directly related to the superconducting properties of the coated conductor. In this study, we have prepared a reel-to-reel electropolishing apparatus to polish the Ni alloy tapes for IBAD. Various electropolishing conditions were investigated to improve the surface roughness. Hastelloy tape is continuously electropolished with high polishing current density (0.5 ∼ 2 A/$\textrm{cm}^2$) and fast processing time (1 ∼ 3 min). Polished hastelloy tapes have surface roughness(RMS) of below 1 nm on a 5 ${\times}$ 5 $\mu\m^2$ from AFM and SEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of Electrical Engineering and Technology
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• 제3권2호
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• pp.271-275
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• 2008

The MAM(Megasonic Agitated Module) has been fabricated for improving the characteristics of wet etching. The characteristics of the MAM are investigated during the wet etching with and without megasonic agitation in this paper. The adoption of the MAM has improved the characteristics of wet etching, such as the etch rate, etch uniformity, and surface roughness. Especially, the etching uniformity on the entire wafer was less than ${\pm}1%$ in both cases of Si and glass. Generally, the initial root-mean-square roughness($R_{rms}$) of the single crystal silicon was 0.23nm. Roughnesses of 566nm and 66nm have been achieved with magnetic stirring and ultrasonic agitation, respectively, by some researchers. In this paper, the roughness of the etched Si surface is less than 60 nm. Wet etching of silicon with megasonic agitation can maintain nearly the original surface roughness during etching. The results verified that megasonic agitation is an effective way to improve etching characteristics of the etch rate, etch uniformity, and surface roughness and that the developed micromachining system is suitable for the fabrication of devices with complex structures.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.124-128
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• 2004

A Poly-Si and a ITO films with surface roughness 1.8 nm and 0.5 nm of root mean square ($R_{rms}$ vakue) values were developed, respectively. A 3 inch UXGA LTPS TFT-LCD with 667 ppi resolution and a 10 inch VGA LTPS OLED have been developed and demonstrated using PMOS technology.

• 물과 미래
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• 제22권3호
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• pp.315-322
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• 1989

해양수치모형에 적용되는 상이한 방사조건을 포함한 개방경계조건의 영향이 $L^{2_}$-norm과 RMS오차해석에 의하여 비교되었다. 수치실험에서는 M2조석, 격자망의 영향, 해저마찰의 영향 등이 각각 고려되었다. 연구결과 개선방사조건이 고려될 때 단순한 구형만에서 해석해와 비교된 $M_2$조석의 경우는 방사조건이 고려되지 않을때보다 $L^{2_}$-norm에 의하면 40%, RMS오차에 의하면 96%나 신뢰성이 향상되었다. 이는 반격자를 이용할 때 보다도 더욱 만족스러운 결과인 것으로 나타났다. 해저마찰이 고려된 경우도 개선방사조건의 도입이 필요한 것으로 판단되었다.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.98-103
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• 2016

The surface morphology of the front transparent conductive oxide (TCO) films plays a vital role in amorphous silicon thin film solar cells (a-Si TFSCs) due to their high transparency, conductivity and excellent light scattering properties. Recently, plasma textured glass surface morphologies received much attention for light trapping in a-Si TFSCs. We report various plasma textured glass surface morphologies for the high efficiency of a-Si TFSCs. Plasma textured glass surface morphologies showed high rms roughness, haze ratio with micro- and nano size surface features and are proposed for future high efficiency of a-Si TFSCs.

• 한국표면공학회지
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• 제28권1호
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• pp.55-63
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• 1995

Alkaline solutions such as $NH_4$OH, choline and TMAH (($CH_3$)$_4$NOH) have been introduced in semiconductor wet processing of silicon wafers to control ionic and particulate impurities following etching in acidic solutions. These chemicals usually mixed with hydrogen peroxide and/or surfactants to control the etch rate of silicon. The highest etch rate was observed in $NH_4$OH solutions at a pH in alkaline solutions. It indicates that the etch rate depends on the content of $OH^{-}$ as well as cations of alkaline solutions. STM/AFM techniques were used to characterize the effect of alkaline solutions on silicon surface roughness. In SC1 (mixture of $NH_4$OH : $H_2$$O_2$ : $H_2$O) solutions, the reduction of the ammonium hydroxide proportion from 1 to 0.1 decreased the surface roughness ($R_{rms}$) from 6.4 to $0.8\AA$. The addition of $H_2$$O_2$ and surfactants to choline and TMAH reduced the values of $R_{p-v}$ and $R_{rms}$ significantly. $H_2$$_O2$ and surfactants added in alkaline solutions passivate bare silicon surfaces by the oxidation and adsorption, respectively. The passivation of surfaces in alkaline solutions resulted in lower etch rate of silicon thereby provided smoother surfaces.s.ces.s.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.