• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.1-5
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• 2010

In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000 V.

• Bulletin of the Korean Mathematical Society
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• v.56 no.5
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• pp.1257-1272
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• 2019

This article concerns the structure of idempotents in reversible and pseudo-reversible rings in relation with various sorts of ring extensions. It is known that a ring R is reversible if and only if $ab{\in}I(R)$ for $a,b{\in}R$ implies ab = ba; and a ring R shall be said to be pseudoreversible if $0{\neq}ab{\in}I(R)$ for $a,b{\in}R$ implies ab = ba, where I(R) is the set of all idempotents in R. Pseudo-reversible is seated between reversible and quasi-reversible. It is proved that the reversibility, pseudoreversibility, and quasi-reversibility are equivalent in Dorroh extensions and direct products. Dorroh extensions are also used to construct several sorts of rings which are necessary in the process.

• Bulletin of the Korean Mathematical Society
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• v.59 no.4
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• pp.853-868
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• 2022

We study the structure of right regular commutators, and call a ring R strongly C-regular if ab - ba ∈ (ab - ba)²R for any a, b ∈ R. We first prove that a noncommutative strongly C-regular domain is a division algebra generated by all commutators; and that a ring (possibly without identity) is strongly C-regular if and only if it is Abelian C-regular (from which we infer that strong C-regularity is left-right symmetric). It is proved that for a strongly C-regular ring R, (i) if R/W(R) is commutative, then R is commutative; and (ii) every prime factor ring of R is either a commutative domain or a noncommutative division ring, where W(R) is the Wedderburn radical of R.

• Journal of applied mathematics & informatics
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• v.41 no.4
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• pp.697-705
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• 2023

We studied new notions of analogues of topological rings. Salih [10] acquaints us with the notion of irresolute topological ring in 2018. In this paper, we further studied the space closely and characterized indispensable properties of the space. We prove that every open subset of an irresolute topological ring is irresolute topological ring. We also obtained the equivalent condition of neighborhood of an element in an irresolute topological ring. It is proved that ring homeomorphism of an irresolute topological ring is irresolute if it is irresolute at identity element e in the irresolute topological ring 𝓡.

• Communications of the Korean Mathematical Society
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• v.39 no.1
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• pp.45-58
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• 2024

Let R be a commutative ring with identity. If the nilpotent radical N il(R) of R is a divided prime ideal, then R is called a ϕ-ring. Let R be a ϕ-ring and S be a multiplicative subset of R. In this paper, we introduce and study the class of nonnil-S-coherent rings, i.e., the rings in which all finitely generated nonnil ideals are S-finitely presented. Also, we define the concept of ϕ-S-coherent rings. Among other results, we investigate the S-version of Chase's result and Chase Theorem characterization of nonnil-coherent rings. We next study the possible transfer of the nonnil-S-coherent ring property in the amalgamated algebra along an ideal and the trivial ring extension.

• Journal of Ecology and Environment
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• v.32 no.2
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• pp.109-113
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• 2009

Tree-ring width analysis has been used to assess the effects of air pollution on tree growth around industrial complexes. Our study was conducted to elucidate the effect of air pollutants on annual ring growth in black pines (Pinus thunbergii) of age 41$\sim$48 years around Ulsan Metropolitan City. The growth data were analyzed by multiple regression and the results are as follows: 1. The annual ring increment of black pines increased with tree age until age 40 years and then decreased gradually after age 40 years. 2. The increment of annual ring width of black pines was affected more by precipitation and evapotranspiration than air temperature. An annual ring decline appeared in the years 1968$\sim$1983, when annual ring indices below zero were observed. Decreased annual ring growth during this period may have been due to air pollution. 3. The heavy metal with the strongest effect on annual ring growth of black pines in the experimental stand was lead (Pb). The concentration of lead in the stand was estimated as over 6 ppm. 4. The technique of tree-ring width analysis may be useful for estimation of the extent of pollution in forest areas near industrial complexes.

• Journal of the Korean Mathematical Society
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• v.50 no.5
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• pp.973-989
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• 2013

We observe from known results that the set of nilpotent elements in Armendariz rings has an important role. The upper nilradical coincides with the prime radical in Armendariz rings. So it can be shown that the factor ring of an Armendariz ring over its prime radical is also Armendariz, with the help of Antoine's results for nil-Armendariz rings. We study the structure of rings with such property in Armendariz rings and introduce APR as a generalization. It is shown that APR is placed between Armendariz and nil-Armendariz. It is shown that an APR ring which is not Armendariz, can always be constructed from any Armendariz ring. It is also proved that a ring R is APR if and only if so is R[$x$], and that N(R[$x$]) = N(R)[$x$] when R is APR, where R[$x$] is the polynomial ring with an indeterminate $x$ over R and N(-) denotes the set of all nilpotent elements. Several kinds of APR rings are found or constructed in the precess related to ordinary ring constructions.

• Journal of the Korean Mathematical Society
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• v.53 no.2
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• pp.381-401
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• 2016

According to Jacobson [31], a right ideal is bounded if it contains a non-zero ideal, and Faith [15] called a ring strongly right bounded if every non-zero right ideal is bounded. From [30], a ring is strongly right AB if every non-zero right annihilator is bounded. In this paper, we introduce and investigate a particular class of McCoy rings which satisfy Property (A) and the conditions asked by Nielsen [42]. It is shown that for a u.p.-monoid M and ${\sigma}:M{\rightarrow}End(R)$ a compatible monoid homomorphism, if R is reversible, then the skew monoid ring R * M is strongly right AB. If R is a strongly right AB ring, M is a u.p.-monoid and ${\sigma}:M{\rightarrow}End(R)$ is a weakly rigid monoid homomorphism, then the skew monoid ring R * M has right Property (A).

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.279-284
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• 2004

In this study, we suggested the ring creep test using the ring specimen of Arsene for estimating the burst creep properties of the cladding in stead of burst creep test. For this objective, we used the load-displacement conversion relationship of ring specimen called LCRR which had been determined on our previous study at high temperature by performing the ring tensile test and the numerical analysis. Then we carried out both the ring creep test and the burst creep test between 350 $^{\circ}C$ and 600$^{\circ}C$ which were higher then the in-service temperature of the cladding in a reactor. The creep properties from the ring creep test with applying LCRR were compared with those from the burst creep test of closed-end specimens. From the results, it could be seen an very strong relationship between them, especially in Larson- Miller parameter. So, it is expected that we can easily anticipate the creep properties of not only claddings but also various small pressure pipes using the ring creep test.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.1995-2003
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• 2014

Power semiconductor devices have been the major backbone for high-power electronic devices. One of important parameters in view of power semiconductor devices often characterize with a high breakdown voltage. Therefore, many efforts have been made, since the development of the Insulated Gate Bipolar Transistor (IGBT), toward having higher level of breakdown voltage, whereby the typical design thereof is focused on the structure using the field ring. In this study, in an attempt to make up more optimized field-ring structure, the characteristics of the field ring were investigated with the use of theoretical arithmetic model and methodologically the design of experiments (DOE). In addition, the IGBT having the field-ring structure was designed via simulation based on the finding from the above, the result of which was also analyzed. Lastly, the current study described the trench field-ring structure taking advantages of trench-etching process having the improved field-ring structure, not as simple as the conventional one. As a result of the simulation, it was found that the improved trench field-ring structure leads to more desirable voltage divider than relying on the conventional field-ring structure.