• Title/Summary/Keyword: Rf0sputtering

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Corrosion Behaviors of TiN Coated Dental Casting Alloys (TiN피막 코팅된 치과주조용 합금의 부식거동)

  • Jo, Ho-Hyeong;Park, Geun-Hyeng;Kim, Won-Gi;Choe, Han-Cheol
    • Korean Journal of Metals and Materials
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    • v.47 no.2
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    • pp.129-137
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    • 2009
  • Corrosion behaviors of TiN coated dental casting alloys have been researched by using various electrochemical methods. Three casting alloys (Alloy 1: 63Co-27Cr-5.5Mo, Alloy 2: 63Ni-16Cr-5Mo, Alloy 3: 63Co-30Cr-5Mo) were prepared for fabricating partial denture frameworks with various casting methods; centrifugal casting(CF), high frequency induction casting(HFI) and vacuum pressure casting(VP). The specimens were coated with TiN film by RF-magnetron sputtering method. The corrosion behaviors were investigated using potentiostat (EG&G Co, 263A. USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion morphologies were analyzed using FE-SEM and EDX. Alloy 1 and Alloy 2 showed the ${\alpha}-Co$ and ${\varepsilon}-Co$ phase on the matrix, and it was disappeared in case of TiN coated Alloy 1 and 2. In the Alloy 3, $Ni_2Cr$ second phases were appeared at matrix. Corrosion potentials of TiN coated alloy were higher than that of non-coated alloy, but current density at passive region of TiN coated alloy was lower than that of non-coated alloy. Pitting corrosion resistances were increased in the order of centrifugal casting, high frequency induction casting and vacuum pressure casting method from cyclic potentiodynamic polarization test.

Enhancements of Crystallization and Opto-Electrical performance of ZnO/Ti/ZnO Thin Films (ZnO/Ti/ZnO 박막의 결정성 및 전기광학적 완성도 개선 연구)

  • Jin-Kyu Jang;Yu-Sung Kim;Yeon-Hak Lee;Jin-Young Choi;In-Sik Lee;Dae-Wook Kim;Byung-Chul Cha;Young-Min Kong;Daeil Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.2
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    • pp.147-151
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    • 2023
  • Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.

Effect of Deposition and Heat Treatment Conditions on the Electrical and Optical Properties of AZO/Cu/AZO Thin Film (증착 및 열처리 조건에 따른 AZO/Cu/AZO 박막의 전기적·광학적 특성 평가)

  • Chan-Young Kim;Ha-Eun Lim;Gaeun Yang;Sukjeang Kwon;Chan-Hee Kang;Sang-Chul Lim;Taek Yeong Lee
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.142-150
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    • 2023
  • AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10-4 Ω·cm and about 1.0×10-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.