• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.49-53
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• 2022

본 연구는 최적화된 전기발광 성능을 가진 양자점 전계 발광 다이오드 소자를 제작하기 위해 RF sputtering 기법으로 Zn_0.85Mg_0.15O 박막을 전자수송층으로 적용하였다. 일반적으로 양자점 전계 발광 다이오드에서 ZnO 나노입자는 적절한 에너지 준위를 가지고 있어 전자 이동도가 빠르고 용액 처리가 용이하다는 장점으로 전자 수송층으로 널리 사용되는 재료이다. 그러나, 용액형 ZnO 나노입자의 불안정성 문제는 아직 해결되지 않고 있다. 이를 해결하기 위해 본 연구에서는 ZnO에 15 % Mg을 도핑한 ZnMgO 박막을 RF sputtering법으로 제작하고 전자수송층으로 적용한 소자를 최적화하였다. 최적화된 ZnMgO 박막을 이용한 소자는 최대 휘도 15,972 cd/m², 전류효율 7.9 cd/A를 보였다. Sputtering ZnMgO 박막 기반 양자점 전계 발광 다이오드 소자는 용액형 ZnO 나노입자의 문제를 해결하고 미래 디스플레이 소자 제작 기술의 적용 가능성을 확인하였다.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 한국결정성장학회지
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• 제14권5호
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• pp.215-219
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• 2004

ZnO 에피박막을 사파이어 기판의 (0001)면 상에 RF magnetron sputtering 법으로 성장하였다. 박막의 성장속도는 약 0.1~0.2$\mu\textrm{m}$/hr 였으며, 기판온도가 $600^{\circ}C$일 때, 약 400~500nm두께의 단결정상의 박막을 성장할 수 있었다. 성장된 단결정상 박막에 대하여 XRD분석과 TEM을 이용하여 박막의 품질과 미세구조를 평가하였다.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 한국재료학회지
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• 제4권4호
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• pp.453-458
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• 1994

256Mb DRAM에서 박막 커패시터로의 적용을 위해서$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST)박막이 RF Magnetron Sprttering방법에 의해 제조되었다. BST박막의 결정화도는 기판온도가 높아짐에 따라 증가하였고 증착된 박막의 조성은 $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$이었다. 이때 Pt/Ti장벽층은 Si의 BST계면으로의 확산을 억제하였다. 100kHz에서의 유전상수 및 유전손실은 각각 320 및 0.022이었다. 인가전계도 (Charge Storage Density)는 40fC/$\mu \textrm{m}^{2}$, 누설전류밀도(Leakage Current Density)는 0.8$\mu A/\textrm{cm}^2$ 로서 RF Matnetron sputtering방법에 의해 제조된 BST 박막이 256Mb DRAM 적용 가능함을 보였다.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.36-40
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• 2016

The 2 wt.% Al-doped ZnO(AZO) thin films were fabricated on PET substrates with various RF power 20, 35, 50, 65, and 80W by using RF magnetron sputtering in order to investigate the structure, electrical and optical properties of AZO thin films in this study. The XRD measurements showed that AZO films exhibit c-axis orientation. At a RF power of 80W, the AZO films showed the highest (002) diffraction peak with a FWHM of 0.42. At a RF power of 65W, the lowest electrical resistivity was about $1.64{\times}[10]$ ^(-4) ${\Omega}-cm$ and the average transmittance of all films including substrates was over 80% in visible range. Good transparence and conducting properties were obtained due to RF power control. The obtained results indicate that it is acceptable for applications as transparent conductive electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• 한국진공학회지
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• 제11권1호
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• pp.1-7
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• 2002

RF Magnetron Sputtering 방법으로 $Ba_{0.5}Sr_{0.5}TiO_3$ 박막을 Pt/Ti/$SiO_2$/Si 기판위에 증착하였다. $Ba_{0.5}Sr_{0.5}TiO_3$ 박막 증착시 기판온도는 실온으로 고정시켜주었고, 작업 가스 유량(Ar:$O_2$)과 RF Power는 각각 90:10에서 60:40까지 그리고 50 W와 75 W로 하였다. 또한 박막 증착 후 RTA(Rapid Thermal Annealing)를 이용하여 산소분위기에서 $600^{\circ}C$로 고온 순간 열처리를 하였다. 커패시터 제작을 위해 UHV System의 E-beam evaporator를 이용하여 Pt를 증착하였다. XRD 측정을 통한 구조적 특성에서는 작업 가스 유량과 RF Power에 비해 고온 순간 열처리가 결정화에 기여도가 큼을 확인할 수 있었다. 전기적 특성에서는 RF Power가 50 W이고 열처리를 한 샘플에서 비교적 우수한 특성을 보여주었다.

• 열처리공학회지
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• 제22권3호
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.