• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.112-112
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.174-174
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.76-76
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• 2003

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.25-25
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• 2006

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.120-120
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.128-129
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• 1993

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2000년도 추계총회 및 학술발표회
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• pp.29-29
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• 2000

• 한국진공학회지
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• 제14권3호
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• pp.159-164
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• 2005

Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.

• 한국진공학회지
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• 제7권s1호
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• pp.140-148
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• 1998

We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.932-938
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• 2007

The structural, optical, and electrical properties of ZnO thin films grown on glass by radio-frequency (rf) magnetron sputtering were investigated. The mixture flow ratio of $O_2$ to Ar, which was operated with sputtering gas, was chosen as a parameter for growing high-qualify ZnO thin films. The structural properties and surface morphologies of the thin films were characterized by the X-ray diffraction and the atomic force microscope, respectively. As for the optical properties of the films, the optical absorbance was measured in the wavelength range of 300-1100 nm by using UV-VIS spectrophotometer. The optical transmittance, absorption coefficient, and optical bandgap energy of ZnO thin films were calculated from the measured data. The crystallinity of the films was improved and the bandgap energy was increased from 3.08 eV to 3.23 eV as the oxygen flow ratio was increased from 0 % to 50 %. Furthermore, The ultraviolet and violet luminescences were observed by using photoluminescence spectroscopy. The hall mobility was decreased with the increase of oxygen flow ratio.