• 한국재료학회지
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• 제18권4호
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• pp.222-227
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• 2008

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 한국진공학회지
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• 제21권1호
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• pp.12-16
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• 2012

Top-Emitting OLED (Organic Light-Emitting Diode) 디스플레이에서는 반사율이 가장 높은 Ag (silver) 박막이 쓰이고 있지만, 소자에서 요구되는 일함수(work function)가 상대적으로 낮기 때문에 전극과 유기물간에 에너지 장벽이 발생하여 발광효율을 낮추는 요인이 되고 있다. 본 논문에서는 Ag 전극의 일함수를 높이기 위한 연구를 진행하였으며, 박막 형태의 Ag 전극에 대하여 nanotribology 접근법으로 연구를 실행하였다. Ag는 rf magnetron sputter를 이용해 glass 위에 증착한 후 furnace에서 $300^{\circ}C$, 30분간 대기 중에서 열처리하였고, 또 다른 시료는 표면에 산소 상압플라즈마로 처리 시간(30, 60, 90, 120s)을 각기 다르게 하여 시료를 제조하였다. Ag 전극을 nanoindentation을 통해 국부 영역에 대한 물리적 특성의 변화를 측정하였고, Kelvin probe force microscopy을 이용해 시료 표면의 포텐셜을 측정했다. 그 결과 열처리한 시료의 포텐셜값은 가장 크게 증가하였지만 균일도가 낮아졌다. 120s 플라즈마 처리한 시료는 불완전한 산화막의 생성으로 인해 탄성계수 및 경도값과 박막의 Weibull modulus를 극히 낮게 만들었지만, 60s, 90s 플라즈마 처리는 시료의 균일도를 높이고 또한 포텐셜을 증가시켜 T-OLED 성능 개선에 좋은 영향을 미치게 될 것이다.

• 한국자기학회지
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• 제6권4호
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• pp.242-250
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• 1996

RF-마그네트론 스퍼터법으로 제조된 $400\;{\AA}$의 $Ni_{81}Fe_{19}$ 박막을 자장중에서 열처리할 때 박막의 미세구조 및 표면형상의 변화에 따른 전자기적 특성을 조사하였다. 보자력은 열처리 온가 $300^{\circ}C$까지 증가함에 따라 박막내부 잔류응력의 감소 및 재결정에 의해 감소하였고, $400^{\circ}C$에서는 결정립성장 및 표면조도의 증가에 의해 증가에 의해 증가하였다. $4{\pi}M_{s}$는 열처리온도에 따라 큰 변화를 보이지 않고, 9.2 kG 수준의 거의 일정한 값을 보였다. 열처리 온도가 증가 함에 따라 전기비저항은 $37\;{\mu}{\Omega}cm$에서 $24\;{\mu}{\Omega}cm$로 감소하였으며, 자기저항값은 $0.6\;{\mu}{\Omega}cm$ 수준으로 거의 일정한 값을 보였고, 자기저항비 1.5 %에서 3.1 %로 증가 하였다. 따라서 자기저항비의 증가는 주로 전기비저항의 감소에 기인한 것으로 나타났다. 이상에서 박막을 실제적인 자기저항 헤드에 응용을 고려시, 최적 열처리조건은 400 Oe의 일방향 자장중 $300^{\circ}C$에서 1시간 열처리할 때로 나타났다.

• 공업화학
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• 제31권3호
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• pp.291-298
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• 2020

본 연구에서는 RF/DC 마그네트론 증착법을 이용하여 실온에서 유리 기판 상에 ZITO/Ag/ZITO 다층막 투명전극을 제조하였다. ZITO/Ag/ZITO (100/8/42 nm)로 이루어진 다층막 구조에 대해, 면저항이 9.4 Ω/㎡이고 550 nm에서 투과도가 83.2%인 투명 전도성 필름이 얻어졌다. ZITO/Ag/ZITO 다층막 필름의 면저항 및 투과도 특성은 적외선(열선)을 효과적으로 차단할 수 있기 때문에 고분자분산액정(polymer-dispersed liquid crystal, PDLC) 기반 스마트 윈도우 적용에 매우 유용함을 알 수 있었으며 이로 인해 에너지 절약형 스마트 유리로서의 응용도 가능할 것으로 판단된다. 제조된 ZITO/Ag/ZITO 다층막 투명전극을 적용한 2관능성 우레탄 아크릴레이트 기반 PDLC 시스템에 있어서 PDLC 층 두께 및 자외선(ultraviolet, UV) 세기 변화가 전기광학적 특성, 광중합 동력학 및 표면 형태학에 미치는 영향을 조사하였다. 15 ㎛의 PDLC 층 두께를 가지며 2.0 mW/c㎡의 UV 세기로 광경화된 PDLC 셀이 우수한 off-state 불투명도, 높은 on-state 투과도 및 양호한 구동 전압을 나타냈다. 또한, 본 연구에서 제조된 최적 조건의 PDLC 기반 스마트 윈도우는 광을 효율적으로 산란시킬 수 있는 2~5 ㎛ 크기의 양호한 마이크로 구조를 갖는 액정 droplet들이 형성되었으며, 이로 인해 우수한 최종 물성을 갖는 PDLC 셀이 제조되었다.

• 센서학회지
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• 제9권1호
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• pp.36-43
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• 2000

휘발성염기질소가스 중에서 TMA 가스의 선택성을 향상시키고 동작온도가 낮고 저농도에서 감도가 높은 반도체가스센서를 제작하기 위해 ZnO에 촉매불순물 $Al_2O_3$, $TiO_2$, $In_2O_3$ 및 $V_2O_5$등의 다양한 무게비가 함유된 ZnO계 타겟을 제작한 후 RF 마그네트론 스펏터링법으로 산소분위기에서 박막을 증착시켰다. 센서의 전기적 안정성을 위해 $700^{\circ}C$에서 1시간동안 산소분위기에서 열처리한 ZnO계 박막으로 센서를 제작한 후 DMA(dimethylamine), 암모니아($NH_3$) 및 TMA(trimethylamine) 가스의 감도를 조사하였다. TMA 가스선택성은 DMA 및 암모니아가스에 대한 TMA 가스의 감도비($S_{TMA}/S_{DMA}$, $S_{TMA}/S_{NH3}$)로 정의하였다. $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ 센서는 160 ppm의 가스농도와 동작온도 $300^{\circ}C$에서 DMA와 암모니아가스에 대한 TMA 가스의 최대 감도비가 각각 5.9와 26을 나타내어 선택성이 향상되었음을 알 수 있었다.

• 한국재료학회지
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• 제18권4호
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• 한국광학회지
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• 제11권5호
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• pp.323-329
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• 2000

[공기 $ISiO_2ITiNI$ 유리]설계의 반사율이 가시광선 영역에서 0이 되는 TiN의 이상적인 복소수 굴절률을 계산하였다. TiN과 $SiO_2$의 각 층의 두께 변화에 따른 2층 무반사 코팅의 반사율을 전사모의하였으며, 그 결과 TiN의 두께를 조절함으로써 최저 반사율 영역의 폭과 반사율을 변화시킬 수 있었고, $SiO_2$층의 두께를 조절함으로써 반사율이 최저가 되는 중심을 이동시킬 수 있었다. RF 마크네트론 스퍼터링 방법으로 증착한 TiN 박막의 화학적, 구조적, 전기적 특성은 각각 Rutherford backscattering spectroscopy (RBS), atomic force microscope(AFM), 4점 탐침 측정기를 이용하였다. 또한 TiN 박막과 2층 무반사 코팅의 광학적 특성은 분광광도계와 variable angle spectroscopic ellipsometer(VASE)를 이용하여 조사하였다. AFM 측정 결과 TiN 박막의 rms 거칠기는 $9~10\AA$으로 비교적 박막의 표면은 균일하고, 높은 기판온도에서 증착한 TiN 박막의 비저항은 4점 탐침측정 결과 $360~730\mu$\Omega $ cm로 매우 낮으며, RBS측정 결과 Ti:O:N=1:0.65:0.95 비율로 산소가 포함되어 있음을 알았다. 이러한 TiN 박막의 특성과 전산모의 바탕으로 증착한 TiN층을 이용한 2층 무반사 무정전 코팅[공기 $ISiO_2ITiNI$ 유리]의 반사율은 440~650 nm영역에서 0.5% 미만이었다.