• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.279-283
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• 2014

In this paper, we present an economical and practical standard to install a bypass diode in a thin-film PV module. This method helps to reduce heat generation and to prevent module degradation due to excess current from reverse bias. The experimental results confirm that for different numbers of solar cells, there is a relation between the excess reverse current and the degradation of solar cells in a-Si:H modules. The optimal number of solar cells that can be connected per bypass diode could be obtained through an analysis of the results to effectively suppress the degradation and to reduce the heat generated by the module. This technique could be expanded for use in high power crystalline Si PV modules.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.343-347
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• 2004

As a first demonstration of proven stability for a-Si, over 7000h of stability data for a high drive current a-Si AMOLED pixel driver circuit was presented at SID 2004. Also demonstrated was an AMOLED display operating at 6V using the IGNIS 4-T pixel driver circuit [1] and based on a top-emission reverse OLED architecture. In this paper, an update to that information is presented with test data that is representative of lifetime in excess of 25,000 hours taking into account pertinent acceleration factors, extracted from high current drive and high temperature stressing conditions. Lifetimes will continue to increase, given the high and ever-increasing OLED efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.2
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• pp.8-14
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• 1968

A linear current-pulse discriminator consisting: of a transistor monostable multivibrator and a Si tunnel diode is described. The input currant pulse range is about 50$\mu$A~5.23mA. The measured maximum linearity deviation is $\pm$0.75% in the input current pulse range mentioned above. The pulse resolving ability of the discriminator measured depends upon the bias current through the T, D. ; and, under the reverse bias current of 3mA, the resolving time is 2rs if allow the excess pulse amplitude of 5%. The threshold stability of the discriminator depends mainly upon the stability of the peak current Ip of the T. D. ; and, under the ambient temperature variation from $0^{\circ}C$ to 5$0^{\circ}C$, no bigger threshold variation than the maximum linearity deviation, i. e. $\pm$ 0.75%, was observed.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.235-238
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• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• Journal of the Korea Convergence Society
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• v.2 no.4
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• pp.29-37
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• 2011

Dispersed generation (DG) such as wind power (WP) and Photovoltaic systems (PV) that has been promoted at the national level recently is mainly being introduced into distribution systems adjacent to consumers because it is generation on a small scale when compared to current generation. Due to its characteristics, DG can be operated by interconnection with distribution systems to present security of more stable power and efficient use of power facilities and resources. Problems on protection coordination of distribution systems by reverse flow of DG can roughly be divided into three possibilities: excess in rated breaking capacity (12.5KA) of protective devices by a fault in DG current supply, failure to operate protective devices by an apparent effect that can occur by reduction in impedance parallel circuit fault current due to interconnection of DG, and malfunction of protective devices by interconnection transformer connection type. The purpose of this study is to analyze problems in protection coordination that can occur when DG is operated by interconnection with distribution systems by conducting modeling and simulations by using theoretical symmetrical components and MATLAB/SIMULINK to present methods to improve such problems.