• Explosives and Blasting
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• v.26 no.2
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• pp.38-44
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• 2008

Recently, planning road construction in South Korea is focused on upgrading of the existing road by rerouting or restructuring. For this, roads under current construction in Korea go for more straight in its alignments and routing. Straight routing makes it all the more required to construct many mountain tunnels and bridges in Korea where mountains are so widely spread. Some portal of mountain tunnel is not rarely planed at high steep slope of mountain valley where it is not easy to secure working space for tunnel excavation. Reverse excavation is an alternative measure for excavation of tunnel portal at high steep slope. Construction in reverse excavation method has three important points requiring careful consideration: 1)planning of pilot tunnel in proper width, height, and length etc., 2)measure against the effect of one-side earth pressure to the direction of tunnel portal, 3)securing tunnel safety against shallow ground condition at portal zone. This paper intends to suggest applicable range of pilot tunnel for reverse excavation at the portal zone located at high steep slope, and shows result of study on the appropriateness of a reverse excavation by means of 3D numerical analysis. Result of 3D numerical analysis for reverse excavation at high steep slope shows that pilot tunneling will be applicable to start from the point $20{\sim}25m$ before the portal from inside the tunnel.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.40-43
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• 2000

The electrons and holes trapped in the tunneling oxide and interface-states generated in the Si/SiO$_2$ interface during program/erase (P/E) operations are known to cause reliability problems which can deteriorate the cell performance and cause the V$_{th}$ window close. This deterioration is caused by the accumulation of electrons and holes trapped in the oxide near the drain and source side after each P/E cycle. we propose three new erase schemes to improve the cell's endurance characteristics: (1)adding a Reverse soft program cycle after the source erase operation, (2)adding a detrapping cycle after the source erase operation, (3)adding a convergence cycle after the source erase operation. (3) is the most effective performance among the three erase schemes have been implemented and shown to significantly reduce the V$_{th}$ window close problem. And we are able to design the reliable periperal circuit of flash memory by using the (3).(3).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• Proceedings of the Korean Information Science Society Conference
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• 1999.10c
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• pp.664-666
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• 1999

Mobile IP 기술에 의해 시간 및 장소의 제한을 받지 않고 사용자가 원격지 또는 이동 중에도 정보를 처리할 수 있는 환경이 제공된다. 패킷 필터링 기술 같은 경우에는 패킷의 출발지, 목적지 주소뿐만 아니라 패킷의 이동 방향도 고려하므로 Mobile IP의 동작이 방해를 받게 될 수가 있다. 이러한 문제점을 해결하기 위해 나온 것이 역 터널링 기법인데 이 경우는 효율성이 떨어지므로 상황에 따라 역 터널링을 수행하는 선택적 역터널링 기법에 나오게 되었다. 효율성을 증진시킨 선택적 역 터널링 기법은 외부 네트워크의 보안 정책에 위배되는 패킷 전송이 이루어질 수도 있으므로 새로운 보안 정책이 절실히 요구된다. 본 논문에서는 선택적 역 터널링시 외부 에이전트가 패킷 필터링 기능을 갖는 기법에 대해 제안한다. 이 기법을 적용함으로써 이동노드가 선택적 역 터널링시 외부 네트워크의 보안 정책에 부합되게 행동할 수 있도록 하였다.

• Journal of Welding and Joining
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• v.32 no.1
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• pp.108-111
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• 2014

Low arc weldability of aluminum alloy is enhanced by applying variable polarity TIG and the result is theoretically investigated to figure out the mechanism. Conventionally, it is well known fact that DCEP (reverse polarity) arc is effective on aluminum welding. The reason is due to oxide layer removal by plasma ion bombardment and therefore it is named as cleaning effect. Another fact of polarity characteristic is that DCEN shows higher heat input efficiency therefore conventional variable polarity arc used to apply DCEP portion as small as possible. However, higher DCEP portion shows bigger weldment in this research and it is explained by adopting a theory of arc concentration on oxide layer with tunneling effect which was not clearly mentioned before in several variable polarity TIG welding research. Disagreement between variable polarity TIG welding result and conventional arc polarity theory is rationally explained for the first time with help of electron emission theory.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.9A
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• pp.728-735
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• 2003

It is a mainly issue that provide mobility smoothly in Mobile IP networks. The IP mobility support being standardized in the IETF utilized tunneling of IP packets from a home agent to foreign agent and utilized reverse tunneling of IP packets from foreign agent to home agent. In this paper, We propose that solve the triangular routing problem in IP mobility and that lessen the messages about IETF routing optimization. Through the Mobile Routing Table on the edge router, agent process the message instead of a end node when handoff occur and that lessen the routing path length by sending directly from FA to to Correspond Node's router. This action lessen the message occurrence frequency and the packet drop. We compare the standard IP, Routing Optimization of Mobile IP, Wu's method and the proposed algorithm. Finally, the simulation results are presented.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.333-337
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• 2020

Orthorhombic DyMnO₃ films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO₃ single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO₃ films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.20 no.6
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• pp.183-194
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• 2010

A company's private network protected by a firewall and NAT(Network Address Translation) is not accessible directly through an external internet. However, as Reverse Connection technology used by NetCat extends to the technologies such as SSH Tunnel or HTTP Tunnel, now anyone can easily access a private network of corporation protected by a firewall and NAT. Furthermore, while these kinds of technologies are commercially stretching out to various services such as a remote control and HTTP Tunnel, security managers in a company or general users are confused under the circumstances of inner or outer regulation which is not allowed to access to an internal system with a remote control. What is more serious is to make a covert channel invading a company's private network through a malicious code and all that technologies. By the way, what matters is that a given security system such as a firewall cannot shield from these perceived dangers. So, we analyze the indirect access of technological methods and the status quo about a company's internal network and find a solution to get rid of the related dangers.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.