• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.1
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• pp.7-13
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• 2007

In this paper, we have designed and fabricated a small size wide-band monopole antenna which can integrate the frequency of previous business mobile communication system by adding 4 PCS of post type parasitic element on top-loaded sleeve monopole antenna. We have observed the properties of return loss upon a parameter change of element, and we also examined radiation properties in the band of PCS, W-CDMA, WiBro, W-LAN and S-DMB in order to make sure the suggested antenna's wide-band properties. We have found that the proposed antenna has omni-direction in horizontal plane and figure eight-direction in vertical plane, and we could have good return loss($Return\;loss{\leq}-10\;dB$) and $1.14{\sim}3.66\;dBi$ gain in $1.67{\sim}3.55\;GHz$ of frequency range($B/W{\fallingdotsep}72%$).

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.137-141
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p}).$ These thermal treatment techniques seem very promising for enhancing FBAR resonance performance.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.111-113
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• 2006

A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.12A
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• pp.1346-1353
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• 2007

In this paper, the methods are presented for the calculation of general coupling coefficient matrixes used in the band pass filter design. They are calculated from transmission coefficient($S_{21}$) and reflection coefficient($S_{11}$) with desired characteristics derived from the poles of filter function and return loss(RL). The calculated matrixes from this method are transformed to the folded canonical filter structure using similarity transformation which lends us the practical filter design. Based on the resulting matrix, the folded canonical filter has been designed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.2
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• pp.107-114
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• 2009

In this paper, high efficiency amplifier configuration is proposed using the reconfigurable power divider. In order to enhance average efficiency of linear power amplifiers for wireless communication, it is required to increase efficiency in low output power region. The proposed power divider operates in two modes, high power mode and low power mode, according to output power. In each mode, it allows impedance matches and low loss, which is made possible by employing two $\lambda/4$ coupled lines and two switches. The fabricated power divider shows the return loss ($S_{11}$) and insertion loss ($S_{21}$) of -16.49 dB and -0.83 dB, respectively, in low power mode. In high power mode, the measured return loss ($S_{11}$) and insertion loss ($S_{31}$) are -16.28 dB and -0.73 dB, respectively. This result successfully demonstrates the reconfigurability of the proposed power divider.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.124-128
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• 2001

We apply for the first time a low cost and loss wafer level packaging technology for RF-MEMS device. The proposed structure was simulated by finite element method (FEM) tool (HFSS of Ansoft). S-parameter measured of the package shows the return loss (S11) of 20dB and the insertion loss (S21) of 0.05dB.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.65-81
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• 1996

In this study forty-five X-bnd rectangular microstrip patch antennas fed by microstrip line using ${\lambda}$/4 transformer were fabricated on teflon substrates with low high permittivities and varous thickness (substrate thickness : 0.6 ~ 2.4 mm, permittivities : 2.15 ~ 10.0), and effects of permittivity and electrical thickness on antenna characteristics were studied with measured return loss (1/S$_{11}$) and resonant frequencies. When substrate electrical thickness was greater than 0.060 ${\lambda}_{0}$return loss was very good and genrally more than 20 dB, but resonance characteristics was somewhat unstable. The more than 0.088 ${\lambda}_{0}$ the thickness was, the more unstable it was. As a result, in the rest range except 12, 13 GHz we had very good mesured return loss iwth greater than 20 dB, and in the range 7 to 9 GHz resonant frequencies were within $\pm$2 % error, on ${\epsilon}_{r}$=5.0, height = 2.4 mm substrate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.376-380
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• 2005

The paper presents some methods to improve characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on Bragg reflectors. Thermal treatments were done by sintering and/or annealing processes. The measurement showed a considerable improvement of return loss (S$_{11}$) and quality factor (Q$_{s/p}$). These thermal techniques seem very promising for enhancing FBAR resonance performance.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.311-315
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• 2005

In this paper, we emphasize the advantage of thermal annealing treatments for improvement characteristics of film bulk acoustic resonator (FBAR) devices. The FBAR devices were fabricated on multi-layer thin films, namely, Bragg reflectors. Sintering and/or annealing processes were applied in our experiments. The measurements confirm once again a considerable improvement of return loss $(S_{11})$ and quality factor $(Q_{s/p})$. these thermal treatment techniques are really promising for enhancing performance of FBAR resonators in industry fabrication of RF devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.437-440
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• 2007

This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.