• 제목/요약/키워드: Retrograde Well

검색결과 71건 처리시간 0.024초

GSI급 MOS Transistor 개발을 위한 HEI (High-Energy Ion Implantation) 공정 분석 시뮬레이터 개발 (Development of Analysis Simulation Tool of High-Energy Ion Implantation Process for GSI MOS Transistor)

  • 손명식;박수현;이영직;권오근;황호정
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1999년도 하계종합학술대회 논문집
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    • pp.946-949
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    • 1999
  • In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

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개방성 동맥관 합병 심실중격결손증 -7례 보고- (Ventricular Septal Defect Associated With Patent Ductus Arteriosus -A Report Of 7 Cases-)

  • 이상호
    • Journal of Chest Surgery
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    • 제12권3호
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    • pp.233-239
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    • 1979
  • Ventricular septal defect associated with patent ductus arteriosus is well known cardiac anomaly that can be treated successfully by operation. This anomaly is found at low frequency. Seven cases of the combined malformation were operated on during the period from 1959 to 1978 in the Department of Thoracic Surgery, Seoul National University Hospital. Right heart catheterization and retrograde aortogram can diagnose the disease correctly. Staged operation in one case and one-stage operation in 5 patients were done. In all cases of the open heart surgery the closure of the ductus was done by transpulmonary suture of the PDA opening. Among 6 patients of the open heart surgery 2 operative death [33.3%] and one late death [total 50%] were noted. Four type II and one type I and one Type IV VSDs were found. In one case the anomaly was accompanied with aortic insufficiency by herniation of the right coronary cusp through Type I VSD.

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가토의 요산배설에 관한 실험적연구 (Experimental Studies on the Excretion of Uric acid in Rabbit)

  • 홍윤표
    • 대한약리학회지
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    • 제7권1호
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    • pp.67-76
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    • 1971
  • The excretion of uric acid in man has been of great interest because of its importance as an end product in purine metabolism as well as of its role in causing gout. There are many differences in the modes of renal handling of urate among various species of animals. Uric acid actively secreted by the renal tubules of most vertebrate including amphibians, reptiles, and birds. On the other hand, in most mammals net tubular reabsorption of urate appears to be occurred with some exception, such, as Dalmatian dog. In the rabbits, however, the mechanism of renal excretion of uric acid has long been a subject of controversial results. Within a given group it was possible to find individuals with either net secretion or net reabsorption of urate depend on the experimental conditions. Excretion of urate can be depressed or enhanced by a variety of drugs belonging mainly to the aromatic acid group. Diodrast, probenecid, cinchophen and salicylates have been reported as uricosuric agents, on the other hand, lactate, benzoate, pyrazinoic acid, acetazolamide and chlorothiazide are known to be contraindicated to use for the patient with gout since these agents depress the excretion of uric acid from the kidney. However, complex and sometimes the paradoxical effects on the urate excretion by those above mentioned drugs are not uncommon. The experiments were designed to investigate the mechanisms of renal handling of urate as well as the effects of variety of drugs on the tubular transport of uric acid in the rabbits. Male or female white rabbits, from 1.5 to 2.5 kg in weight, were used. The experimental methods used in these studies were clearance, stop-flow, and retrograde injection techniques. The effects of saline, salicylate, chlorothiazide and probenecid were investigated in each experimental conditions. Results of the experiments were summarized as follows; 1. In the rabbits, the rate of urate clearance was always lower than the rate of inulin clearance. The filtration fraction of the urate was one third on an average, therefore, it is estimated that approximately two thirds of filtered urate was reabsorbed. 2. In the kidneys of rabbits, the urate clearance was increased significantly by administration of chlorothiazide and decreased by probenecid. The administration of salicylate had no effect on the rate of urate clearance. The filtration fraction of urate was increased by chlorothiazide and decreased by probenecid. 3. In the stop-flow studies, the U/P ratio of urate was higher than the U/P ratio of inulin in the proximal region, indicating the secretion of uric acid in the proximal tubules. The proximal peak was increased by chlorothiazide and inhibited by probenecid.4. In the retrograde injection studies, the reabsorption of urate in the proximal region was observed, and these reabsorptive transport of urate was depressed by either probenecid or by chlorothiazide. 5. No distal tubular activity was observed under any of these experimental conditions concerning urate transport. The results of these experiments show that probenecid inhibits both secretory and reabsorptive transport of uric acid in the kidney of the rabbits. The enhancement of secretory transport of urate by chlorothiazide in the clearance study was due to the secondary action of chlorothiazide which inhibits the reabsorptive transport of urate in the proximal tubules. It is evident that the urate transport in the kidneys of rabbits is bidirectional nondiffusive flux both secretory and reabsorptive directions in the proximal tubules.

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Empirical medical therapy in idiopathic male infertility: Promise or panacea?

  • Jung, Jae Hung;Seo, Ju Tae
    • Clinical and Experimental Reproductive Medicine
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    • 제41권3호
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    • pp.108-114
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    • 2014
  • Male factors account for 20%-50% of cases of infertility and in 25% of cases, the etiology of male infertility is unknown. Effective treatments are well-established for hypogonadotropic hypogonadism, male accessory gland infection, retrograde ejaculation, and positive antisperm antibody. However, the appropriate treatment for idiopathic male infertility is unclear. Empirical medical treatment (EMT) has been used in men with idiopathic infertility and can be divided into two categories based on the mode of action: hormonal treatment and antioxidant supplementation. Hormonal medications consist of gonadotropins, androgens, estrogen receptor blockers, and aromatase inhibitors. Antioxidants such as vitamins, zinc, and carnitines have also been widely used to reduce oxidative stress-induced spermatozoa damage. Although scientifically acceptable evidence of EMT is limited because of the lack of large, randomized, controlled studies, recent systematic reviews with meta-analyses have shown that the administration of gonadotropins, anti-estrogens, and oral antioxidants results in a significant increase in the live birth rate compared with control treatments. Therefore, all physicians who treat infertility should bear in mind that EMT can improve semen parameters and subsequent fertility potential through natural intercourse.

재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성 (A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide)

  • 남동우;안호명;한태현;이상은;서광열
    • 한국전기전자재료학회논문지
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    • 제15권7호
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    • pp.576-582
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    • 2002
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

마비성 장폐색증에 병발된 간문맥 내 가스 (Hepatic portal venous gas in paralytic ileus)

  • 이지은;손민수;허준호;조선영;최선택;성영호
    • Journal of Yeungnam Medical Science
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    • 제31권1호
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    • pp.56-60
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    • 2014
  • Hepatic portal venous gas (HPVG) is a rare radiographic finding associated with severe intra-abdominal disease and fatal outcome. Most cases of HPVG are historically related to mesenteric ischemia accompanied by bowel necrosis. The current spread of computed tomography scan promotes not only the early detection of related severe diseases but also the identification of other causes of HPVG. It has been reported in many non-fatal conditions, such as inflammatory bowel disease, intra-abdominal abscess, bowel obstruction, paralytic ileus, endoscopic retrograde cholangiopancreatography and endoscopic sphincterotomy, and gastric dilatation. Among these, paralytic ileus is a very rare condition, with no case yet reported in South Korea. Reported herein is a case of HPVG in paralytic ileus, which was treated well internally and was promptly resolved.

Sengmaek-san-mediated Enhancement of Axonal Regeneration after Sciatic Nerve Injury in the Rat

  • Baek, Kyung-Min;Kim, Yoon-Sik;Ryu, Ho-Ryong;Jo, Hyun-Kyung;An, Jung-Jo;Namgung, Uk;Seol, In-Chan
    • 동의생리병리학회지
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    • 제22권2호
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    • pp.431-437
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    • 2008
  • Sengmaek-san(Shengmai-san; SMS) is used in oriental medicine as one of the key herbal medicine for treating diverse symptoms including cardiovascular and neurological disorders. In the present study, the effects of SMS on axonal regeneration were investigated in the rat model given sciatic nerve injury. SMS treatment enhanced axonal regrowth into and the number of non-neuronal cells in the distal area after crush injury. GAP-43 protein levels were increased in the injured sciatic nerve compared to intact nerve and further upreguated by SMS treatment. GAP-43 protein was increased similarly in the dorsal root ganglion (DRG) at lumbar 4 - 6 by nerve injury and SMS treatment, suggesting GAP-43 induction at gene expression level. SMS-mediated increase in phospho-Erk1/2 protein was observed in the DRG as well as in the injured nerve implying its retrograde transport into the cell body as the process of lesion signal transmission. The present findings suggest that SMS may be involved in enhanced axonal regeneration via dynamic regulation of regeneration-associated proteins.

십이지장 내강 내 게실로 인한 반복적인 췌장염 - 1예 보고 - (Recurrent Pancreatitis Caused by Intraluminal Duodenal Diverticulum in an 11-year-old Girl - a Case Report -)

  • 지문종;강신용;최병호;박진영
    • Advances in pediatric surgery
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    • 제11권2호
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    • pp.175-179
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    • 2005
  • An 11-year-old girl with a history of two previous attacks of acute pancreatitis was admitted to another hospital. Her epigastrium was tender, and serum amylase was 657 IU/L and lipase 3131 IU/L. Abdominal computed tomography scan suggested necrosis of 30% of the pancreas. Retrograde endoscopic cholangiopancreatography showed a diverticulum covered by normal duodenal mucosa at the second portion of the duodenum, which was separated from the adjacent duodenal lumen by a radiolucent band at UGI series. The apex of the diverticulum was incised endoscopically using a needle knife papillotome. A follow-up endoscopy on the next day noticed bleeding from the incised edge of the diverticulum. Endoscopic hemostasis with hemoclipping and injection of hypertonic saline-epinephrine solution was not successful. The patient was transferred to Kyungpook National University Hospital, and open duodenotomy and excision of the diverticulum were performed. She has recovered well and remains asymptoatic.

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재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성 (A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide)

  • 남동우;안호명;한태현;서광열;이상은
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.17-20
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    • 2001
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

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고밀도 $Cl_2$/Ar 플라즈마를 이용한 $YMnO_3$ 박막의 식각 특성에 관한 연구 (A Study on the Etching Characteristics of $YMnO_3$ Thin Films in High Density $Cl_2$/Ar Plasma)

  • 민병준;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.21-24
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    • 2000
  • Ferroelectric YMnO$_3$ thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$ thin films were etched with C1$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ thin films is 285 $\AA$/min under C1$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$ film is approximately 65$^{\circ}$and free of residues at the sidewall.

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