• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.408-408
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• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.993-997
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• 1998

This paper presents a two-switch boost chopper with a sinewave current shaping and power factor correction scheme, which is applied for driving electronic ballast using high frequency resonant inverter. A working principle of the proposed one-converter type electronic ballast with power factor correction and active filtering schemes is described on the bases of the equivalent circuit of each operation mode, together with operation analysis. The steady-state performance evaluations of this electronic ballast are illustrated and discussed in experiment.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.242-244
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• 2006

본 논문은 LCD Backlight 인버터 구동 응용을 위한 다중 램프 점등 시 트랜스포머 소자 수 감소를 이를 수 있는 전류평형 트랜스포머의 구조 및 형상에 관한 것으로서, 제안된 트랜스포머 구조는 기존의 트랜스포머 구조 방식에 비해 소자 수가 줄어들어, LCD Backlight 인버터의 원가를 저감 할 수 있는 트랜스포머 구조 및 형상에 관한 것이다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2010년도 하계학술대회 논문집
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• pp.343-344
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• 2010

본 논문에서는 넓은 입출력 변동 범위를 가지는 LLC 공진형 직류-직류 변환기의 전류형 제어에 대해서 소개한다. 먼저, 전류형 제어의 개념과 목적을 설명하고 전류형 제어를 적용한 변환기를 소신호 해석을 이용해 전원단의 동특성을 확인한다. 그리고 동특성 해석을 바탕으로 전압 보상기 회로를 구성한 후, 변환기의 성능을 실험과 시뮬레이션을 통해 비교 및 검증한다. 마지막으로 전압형 제어를 이용한 변환기와 비교를 통해 전류형 제어의 우수성을 확인한다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2010년도 하계학술대회 논문집
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• pp.29-30
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• 2010

This paper proposed bidirectional DC-DC converter applying soft switching technique. Compared with conventional bidirectional converter, the main switches of proposed converter are operated without switching losses, and auxiliary switches were run under soft switching condition using quasi-resonant current mode. To verify the validity of the proposed converter, mode analysis and simulation results are presented.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2010년도 하계학술대회 논문집
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• pp.393-394
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• 2010

본 논문은 LCL필터를 이용한 분산전원용 계통연계형 PCS의 전류제어기를 비교 분석하였다. 주요 비교대상은 PI(Proporional-intergral)제어기, PR(Proportional-Resonant), 제어기, DeadBeat (DB)제어기 등의 선형 제어기 이며, 각 제어기의 과도상태 응답특성과 정상상태 응답특성을 시뮬레이션으로 비교하였다. 또한 DSP의 특성에 의한 1 주기 지연, 리액턴스와 저항 변화 등에 강인한 DB제어기 관하여 논의 하겠다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2010년도 하계학술대회 논문집
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• pp.242-243
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• 2010

This paper investigates a power supply of medium voltage with enhanced ignition characteristics for plasma torch. Series resonant half-bridge topology is presented to be a suitable ignition circuitry. The ignition circuitry is integrated into the main power conversion system of a multi-phase staggered three-level dc-dc converter with a diode front-end rectifier. The plasma torch rated for 3MW, 2kA and having the physical size of 1m long is selected to be a high enthalpy source in waste disposal system. The steady-state and transient operations of plasma torch are simulated. The parameters of Cassie-Mary arc model are calculated based on 3D magneto-hydrodynamic simulations. Circuit simulation waveform shows that the ripple of arc current can be maintained within ${\pm}10%$ of its rated value under the existence of load disturbance. This power conversion configuration provides high enough ignition voltage around 5KA during ignition phase and high arc stability under the existence of arc disturbance noise resulting in a high-performance plasma torch system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.147-150
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• 2002

HPSL(High Pressure Sodium lamp)have attracted much attention in recent years, because they offer high luminous efficiency and very long life. Recently, AC-DC converters have been widely as power factor improvement circuits in the power conversion equipment An application of the ZVT-PWM(Zero Voltage Transition Pulse Width Modulation) boost converter, which has great advantage on miniaturization and high power density, to the power factor improvement circuit of the HPSL inverter are described to identify the power factor correction characteristics of the inverter. In this paper the series-parallel resonant inverter(electronic ballast) for driving a HPS lamp is discussed. Finally, a power factor corrector is cascaded in front of the electronic ballast. Consequently, a high power factor above 0.99 and low THD on the line current can be achieved.

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.1256-1259
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• 2006

The purpose of this study was to investigate the current status and influence factor in measuring the dynamic stiffness of damping materials. The property of the dynamic stiffness of damping materials was tested and analysed in condition such as the size of test samples and the change of relative humidity in heating chamber. Test results showed that the dynamic stiffness of after-heating was lower than that of before-heating in most samples and the change of relative humidity in heating chamber got little influence of the dynamic stiffness. The resonant frequency of test sample decreased $2{\sim}7Hz$ as the decrease of the size of sample. Because it was increased that total mass per unit area of sample, the change of dynamic stiffness had little influence.