• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.10
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• pp.719-724
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• 2016

This paper describes the performance improvement of an inrush current limiter to prevent damage or malfunctions in power converters due to the inrush current. When the power converter of military radar is operated, the circuit breaker of the power converter is often activated because the overcurrent flows through the circuit breaker of the power converter. Therefore, this study performed a cause analysis of the problem, which is a larger current flow than the intended current(250A). The operation principle of an inrush current limiter and SCR (Silicon Controlled Rectifier) used in the inrush current limiter was analyzed. As a result, the overcurrent flow through the circuit breaker was found to be due to dv/dt triggering of SCR. Based on cause analysis, this paper proposes a technique by adding the resistor in front of the SCR to prevent an unnecessary inrush current. Finally, the effectiveness of the improvement was verified by measuring the output current in the inrush current limiter. The power converter equipped with the improved inrush current limiter operated for more than 1 year without the circuit breaker of the power converter being activated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1899-1909
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• 2007

A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.

• Journal of Advanced Navigation Technology
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• v.22 no.6
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• pp.642-647
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• 2018

In this paper, an unequal power divider based on adjusting electrical length of uniform transmission line is presented. This divider consists of three uniform transmission lines and one isolation resistor and have the different port impedances of input and output. The feature of proposed divider can changed the power dividing ratio to adjust only electrical length of uniform transmission lines. To verify the feasibility of proposed power divider, two divider circuits are designed, one is 1:2 power dividing ratio divider with $60{\Omega}$ uniform transmission line and $40{\Omega}$ input port impedances and $45{\Omega}$ output port impedances, the performance data were measured the insertion losses of 1.7 dB/ 5.0 dB, return losses of more than -30 dB and isolation of more than -35 dB. The other is 1:4 power dividing ratio divider with $40{\Omega}$ uniform transmission line and $50{\Omega}$ input port impedances and $75{\Omega}$ output port impedances, the performance data were measured the insertion losses of 1.3 dB/ 6.8 dB, return losses of more than -12 dB and isolation of more than -19 dB. The measured performance data agreed well with the simulated results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.10
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• pp.1409-1415
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• 2021

The Gysel divider has the advantage of easily setting the resistor in the circuit. If the line impedance in the Gysel divider is set differently, the input signal can be distributed to the two output ports at various distribution ratios. This paper proposes the Gysel divider that can change the power distribution to 1:3 or 3:1 by changing the line impedance. The impedance change of the line can be implemented by placing a floating copper plate on the bottom of the microstrip-line. When the floating copper plate and the ground plane are connected, the line operates as the microstrip-line, and when the floating copper plate and the ground plane are disconnected, the line operates as the coplanar-line. The proposed Gysel divider was fabricated at the center frequency of 1.5GHz. The fabricated 3:1 Gysel divider has a stable value S₁₁ of below -17dB, S₂₁/S₃₁ of 4.8±0.2dB, S₂₁(to high output port) of -1.39±0.12dB and S₃₁(to low output port) of -6.15±0.08dB over 1.3~1.7GHz.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.15 no.2
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• pp.109-116
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• 2022

In this paper, we propose a band rejection filter (BRF) with a state variable filter (SVF) structure to effectively remove the influence of 60 Hz line frequency noise introduced into the sensor system. The conventional BRF of the SVF structure uses an additional operational amplifier (OPAMP) to add a low pass filter (LPF) output and a high pass filter (HPF) output or an input signal and a band pass filter. Therefore, the notch frequency and the notch depth that determine the signal attenuation of the BRF greatly depend on the tolerance of the resistors used to obtain the sum or difference of the signals. On the other hand, in the proposed BRF, since the BRF output is formed naturally within the SVF structure, there is no need for a combination between each port. The notch frequency of the proposed BRF is 59.99 Hz, and it can be confirmed that it is not affected at all by the tolerance of the resistor through the Monte Carlo simulation results. The notch depth also has an average of -42.54dB and a standard deviation of 0.63dB, confirming that normal operation as a BRF is possible. Also, with the proposed BRF, noise filtering was applied to the electrocardiogram (ECG) signal that interfered with 60 Hz noise, and it was confirmed that the 60 Hz noise was appropriately suppressed.

• Journal of IKEEE
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• v.27 no.1
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• pp.45-52
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• 2023

Cold-junction correction(CJC) and disconnection detection circuit design of various thermocouples(TC) and multi-channel TC interface circuit using them were designed. The CJC and disconnection detection circuit consists of a CJC semiconductor device, an instrumentation amplifier(IA), two resistors and a diode for disconnection detection. Based on the basic circuit, a multi-channel interface circuit was also implemented. The CJC was implemented using compensation semiconductor and IA, and disconnection detection was detected by using two resistor and a diode so that IA input voltage became -0.42V. As a result of the experiment using R-type TC, the error of the designed circuit was reduced from 0.14mV to 3㎶ after CJC in the temperature range of 0℃ to 1400℃. In addition, it was confirmed that the output voltage of IA was saturated from 88mV to -14.2V when TC was disconnected from normal. The output voltage of the designed circuit was 0V to 10V in the temperature range of 0℃ to 1400℃. The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel. The implemented multi-channel interface has a feature that can be applied equally to E, J, K, T, R, and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• Journal of Korean Society of Forest Science
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• v.106 no.4
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• pp.397-407
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• 2017

This research aims to analyze and compare the drought resistance of 7 species of landscape trees commonly grown in Korea. The 7 species are: Camellia japonica, Rhaphiolepis indica, Quercus glauca, Machilus thunbergii, Daphniphyllum macropodum, Dendropanax morbifera and Cinnamomum camphora. In order to analyze their drought resistance, the samples were left without irrigation for 30 days (05/09/2016 ~ 05/10/2016), during which period their respective drought resistor, relative water content, electrolyte elution figures and proline content were measured. As the non-irrigation proceeded, C. camphora was the first to wither, followed by D. morbifera, then D. macropodum, then M. thunbergii, then Q. glauca, then R. indica then finally C. japonica. Of the 7 species, Q. glauca, C. japonica and R. indica can be considered highly drought resistant, since they survived for longer than 3 weeks without irrigation. Relative water content (RWC) plummeted dramatically after the first 15 days of non-irrigation. Whereas RWC readings of C. camphora, D. morbifera, D. macropodum and M. tunbergii dropped by 40% or more, the other 4 species reported a relatively low rate of decrease at 20% or lower. The Camellia japonica, the R. indica and Q. glauca, which were the species with relatively high drought resistance, showed low proline content and electrolyte elution figures, whereas those of C. camphora, D. macropodum, D. morbifera and M. tunbergii were higher. Analysis through the nonlinear regression analysis logistic model showed that non-irrigation proved fatal for the 7 sample species in a range of 22.7 to 37.6 days. The C. japonica, R. indica, Q. glauca and M. tunbergii demonstrated a high drought resistance of 30 days or longer, whereas C. camphora, D. morbifera and D. macropodum had a low resistance of 25 days or less to drought from lack of water. In conclusion, out of the 7 species of broad-leaved evergreen trees tested, C. japonica, R. indica and Q. glauca seem to be suitable for use as landscape trees, owing to their high drought resistance.