• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.306-315
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• 2016

Amorphous vanadium titanates (aVTOs) are examined for use as a negative electrode in lithium-ion batteries. These amorphous mixed oxides are synthesized in nanosized particles (<100 nm) and flocculated to form secondary particles. The $V^{5+}$ ions in aVTO are found to occupy tetrahedral sites, whereas the $Ti^{4+}$ ions show fivefold coordination. Both are uniformly dispersed at the atomic scale in the amorphous oxide matrix, which has abundant structural defects. The first reversible capacity of an aVTO electrode ($295mAhg^{-1}$) is larger than that observed for a physically mixed electrode (1:2 $aV_2O_5$ | $aTiO_2$, $245mAhg^{-1}$). The discrepancy seems to be due to the unique four-coordinated $V^{5+}$ ions in aVTO, which either are more electron-accepting or generate more structural defects that serve as $Li^+$ storage sites. Coin-type Li/aVTO cells show a large irreversible capacity in the first cycle. When they are prepared under nitrogen (aVTO-N), the population of surface hydroxyl groups is greatly reduced. These groups irreversibly produce highly resistive inorganic compounds (LiOH and $Li_2O$), leading to increased irreversible capacity and electrode resistance. As a result, the material prepared under nitrogen shows higher Coulombic efficiency and rate capability.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.933-934
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• 2007

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) based on BSCCO-2212 bulk coils. Each bulk coils of the SFCL was designed to have the rated voltage of 220 $V_{rms}$ and the critical current($I_C$) of 320$\sim$340 A at 77K. Ten components in series, make the SFCL having the rated voltage of 2.2 $kV_{rms}$ for equal quench test. The fault test was conducted at an input voltage of 2.2 $kV_{rms}$ and fault current of 25 $kA_{rms}$. In addition, we examined the endurance characteristics for all bulk coils through repeat fault test. Test results shows that the SFCL successfully limited the fault current of 25$kA_{rms}$ to below $7{\sim}8kA_{p}$ within minimum 1.1msec after fault occurred. All bulk coils quenched together upon faults and shared the rated voltage evenly. The endurance test results show an equivalent among repeat fault test. During the quench process, average temperature of all bulk coils did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.2
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• pp.279-290
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• 2022

A superconducting fault current limiter(SFCL) is a power device that exploits superconducting transition to control currents and enhances the flexibility, stability and reliability of the power system within a few milliseconds. With a high phase transition speed, high critical current densities and little AC loss, high-temperature superconducting (HTS) wires are suitable for a resistive-type SFCL. However, HTS wires due to the lack of optimization research are rather inefficient to directly apply to a fault current limiter in terms of the design and capacity, for the existing method relied the characteristics. Therefore, in order to develop a suitable wire for an SFCL, it is necessary to enhance critical current uniformity, select optimal stabilizer materials and conducted research on the development of uniform stabilizer layering technology. The high temperature superconducting wires manufactured by this study get an average critical current of 804 A/12mm-width at the length of 710m; therefore, conducted research was able to secure economic performance by improving efficiency, reducing costs, and reducing size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.231-240
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• 2024

Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂'s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.74-81
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• 2007

In this paper, CMOS analog-to-digital converter (ADC) with a 6-bit 1GSPS at 1.8V is described. The architecture of the proposed ADC is based on a folding type ADC using resistive interpolation technique for low power consumption. To reduce the power consumption, a folder reduction technique to decrease the number of folding blocks (NFB) by half of the conventional ones is proposed. further, a novel layout technique is introduced for compact area. With the clock speed of 1GSPS, the ADC achieves an effective resolution bandwidth (ERBW) of 500MHz, while consuming only 60mW of power. The measured INL and DNL were within $\pm$0.5 LSB, $\pm$0.7 LSB, respectively. The measured SNR was 34.1dB, when the Fin=100MHz at Fs=300MHz. The active chip occupies an area of 0.27$mm^2$ in 0.18um CMOS technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.7
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• pp.1227-1234
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• 2008

In this paper is designed a 256-bit synchronous OTP(one-time programmable) memory required in application fields such as automobile appliance power ICs, display ICs, and CMOS image sensors. A 256-bit synchronous memory cell consists of NMOS capacitor as antifuse and access transistor without a high-voltage blocking transistor. A gate bias voltage circuit for the additional blocking transistor is removed since logic supply voltage VDD(=1.5V) and external program voltage VPPE(=5.5V) are used instead of conventional three supply voltages. And loading current of cell to be programmed increases according to RON(on resistance) of the antifuse and process variation in case of the voltage driving without current constraint in programming. Therefore, there is a problem that program voltage can be increased relatively due to resistive voltage drop on supply voltage VPP. And so loading current can be made to flow constantly by using the current driving method instead of the voltage driving counterpart in programming. Therefore, program voltage VPP can be lowered from 5.9V to 5.5V when measurement is done on the manufactured wafer. And the sens amplifier circuit is simplified by using the sens amplifier of clocked inverter type instead of the conventional current sent amplifier. The synchronous OTP of 256 bits is designed with Magnachip $0.13{\mu}m$ CMOS process. The layout area if $298.4{\times}314{\mu}m2$.

• Applied Chemistry for Engineering
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• v.33 no.6
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• pp.630-635
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• 2022

Copper(II) oxide (CuO), electroless plated on a nitrogen-containing carbon sponge prepared by a melamine sponge thermal treatment, was developed as a nitric oxide (NO) gas sensor that operates without a wafer. The CuO content on the surface of the carbon sponge increased as the plating time increased, but the content of nitrogen known to induce NO gas adsorption decreased. The untreated carbon sponge showed a maximum resistance change (5.0%) at 18 min. On the other hand, the CuO plated sample (CuO30s-CS) showed a maximum resistance change of 18.3% in 8 min. It is considered that the improvement of the NO gas sensing capability was caused by the increase in hole carriers of the carbon sponge and improved movement of electrons due to CuO. However, the NO gas detection resistance of the CuO electroless plated carbon sponge for 60 s decreased to 1.9%. It is considered that the surface of the carbon sponge was completely plated with CuO, resulting in a decrease in the NO gas adsorption capacity and resistance change. Thus, CuO-plated carbon sponge can be used as an effective NO gas sensor because it has fast and excellent resistance change properties, but CuO should not be completely plated on the surface of the carbon sponge.

• Journal of Animal Environmental Science
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• v.8 no.1
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• pp.9-16
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• 2002

This study was conducted to develope the new solid separating system which can be efficiently and economically removed the solid parts in high pollutants concentration of pig slurry. The pollutants concentration, BOD$_{5}$ , COD and SS of the slurry used in this study was 15,990($\pm$2,389)mg/l, 20,004($\pm$5,512)mg/l and 26,486($\pm$5,935)mg/l, respectively. After removal of solid part in slurry, the pollutants concentration, BOD$_{5}$, COD and SS was change into 5,617($\pm$690)mg/l, 5,553($\pm$633)mg/land 1,456($\pm$341)mg/l, respectively in the Fixed biological membrane tank. The reduction of the pollutants concentration of suspend liquid through membrane will be allowed to greatly improve the water purification by an Activated sludge method. This separating system consisted of a temporary storage, a circulating tank and a Fixed Biological membrane tank. A temporary storage which has a draining system of screw type and an aeration device played a tremendous role in draining the solid by filled an aeration of 0.3 l/min. A Fixed Biological membrane tank of which a styrofoam filled in a 2/3 volume as a Biological media was fixed by a stainless steel net (pore size : 0.5mm) to separate the liquid layer of influx in them. The separating system efficiency factors were the speed of screw motor, cycle number of slurries in a circulating tank and moisture contents of solid effluent through the screw path. Although the pollutants concentration was very variable in temporary storage, the final concentration of $BOD_5$ and SS, except COD of the suspended liquid in a Fixed biological membrane were not different regardless of cycle number of a circulating tank. Moisture contents of effluent from temporary storage was 73% under the speed 1 ppm of screw motor and 62% under the 1/4rpm of it.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.