• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.677-680
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• 2009

DC influence between pixel electrode and alignment layer (AL) in in-plane switching mode LCD was analyzed through DC equivalence-circuit equation induction, DC charge-discharge simulation, luminance and residual-DC measurement systems using test patterned (TP) cell. DC discharging rate (DDR) of single layer electrode was faster than that of double layer electrode and DDR of low resistance AL was faster than that of high resistance AL. DC discharging characteristics had a close relation to layer number and resistance between two electrodes.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1997.10a
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• pp.11-13
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• 1997

Abstract - An electronic starter using MOSFET has been designed to take advantage of ideal preheating and starting features which can extend the lifetime of fluorescent lamps. The preheating circuit of the developed electronic starter is consisted of four parts - afull-wave rectifier circuit, an FET switching circuit a timer circuit for the gate switching, and a circuit for end-of-life protection. The circuit is analyzed by using PSpice simulation, and is improved to give an appropriate starting-time through control of R-C time constant of the timer circuit. And the circuit is also provided with an end-of-life protection feature, which utilizes the negative resistance characteristics of a thermistor that is thermally linked to FET through a heatsink. This also protects the FET from any overheating problems. From the results of simulation it is possible to obtain an appropriate value on the starting time for proper ignition and also it is verified that the limit for resistance of the thermistor is dependant on the value of resistance is the timer circuit

• Journal of Magnetics
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• v.21 no.4
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• pp.491-495
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• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• Information Systems Review
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• v.11 no.3
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• pp.125-146
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• 2009

The emergence of open source software(OSS) with its most prominent advantages creates a vast interest among practitioners. A study on Linux, the most well-known OSS, estimated that it would cost as 5.4 billion Euros taking over 73,000 person-years if it had been developed by conventional means. However, Linux has achieved only 0.65 percent of the operating system market for individual users while Microsoft windows family counts for nearly 90 percent of the market. Much of the effort being spent in the development of OSS is going to waste and potential value that OSS can bring to users is not being realized. Adoption of OSS is often accompanied by the discontinuance of existing software that is already in place. If users resist changing, they may not adopt OSS. Using the case of Linux, this study examines user resistance to change from the commercial operating software to the free operating system. This study identifies six sub-types of switching costs (uncertainty, emotional, setup, learning, lost benefit, and sunk costs) and tests their effects on user resistance to change based on a survey of 201 users. The results show that user resistance to change has a negative impact on the adoption of OSS. Further, this study shows that uncertainty and emotional costs have significant effects on user resistance to change. Beyond previous research on technology adoption, this research contributes towards an understanding of the switching costs leading to user resistance to change and offers suggestions to OSS practitioners for developing strategies to improve the adoption of OSS.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.76-82
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• 2000

PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.

• Journal of Power Electronics
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• v.2 no.2
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• pp.124-129
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• 2002

Invertigation electromagnetic emissione of inverter power sources resistance welding existing special aspects of EMI measurements in the field of resistance welding machines resulting from the power rating and operation mode of these machines have to be taken into account. The characteristics of the internal switching processes determined by the behavior of the applied power semiconductors, sunbber circuits and constructional aspect exert a great influence on the conducted emission welding inverters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of the Korean Society for Railway
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• v.15 no.6
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• pp.597-603
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• 2012

The cases for selecting contact materials of Ag and AgC for Bias Track Relay are the studies and their safety evaluations are proposed in this paper. The welding at the relative low current has occurred in Ag contacts, but the one has not occurred in AgC contacts although the high currents flow since it has an excellent temperature characteristic. In the repetitive switching experiment, more unstable resistance and transfer phenomena has occurred in contacts as the switching numbers of AgC contacts increase, which results in more consumption of contacts. In the experiments, there exists a trade off relationship between welding and resistance variation. AgC contacts have excellent characteristics in welding, but the caution is required in using them since a lot of repetition switching produces much resistance variation. However, Ag contacts have excellent characteristics in repetitive switching, but weak ones in welding.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1489-1498
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• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.