• Korean Journal of Materials Research
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• v.25 no.9
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• pp.429-434
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• 2015

Resistance switching memory cells were fabricated using atomically dispersed Pt-$SiO_2$ thin film prepared via RF co-sputtering. The memory cell can switch between a low-resistance-state and a high-resistance-state reversibly and reproducibly through applying alternate voltage polarities. Percolated conducting paths are the origin of the low-resistance-state, while trapping electrons in the negative U-center in the Pt-$SiO_2$ interface cause the high-resistance-state. Intermediate resistance-states are obtained through controlling the compliance current, which can be applied to multi-level operation for high memory density. It is found that the resistance value is related to the capacitance of the memory cell: a 265-fold increase in resistance induces a 2.68-fold increase in capacitance. The exponential growth model of the conducting paths can explain the quantitative relationship of resistance-capacitance. The model states that the conducting path generated in the early stage requires a larger area than that generated in the last stage, which results in a larger decrease in the capacitance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• Smart Structures and Systems
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• v.30 no.2
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• pp.183-193
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• 2022

Structural health monitoring and structural vibration control are multidisciplinary and frontier research directions of civil engineering. As intelligent materials that integrate sensing and actuation capabilities, shape memory alloys (SMAs) exhibit multiple excellent characteristics, such as shape memory effect, superelasticity, corrosion resistance, fatigue resistance, and high energy density. Moreover, SMAs possess excellent resistance sensing properties and large deformation ability. Superfine NiTi SMA wires have potential applications in structural health monitoring and micro-drive system. In this study, the mechanical properties and electrical resistance sensing characteristics of superfine NiTi SMA wires were experimentally investigated. The mechanical parameters such as residual strain, hysteretic energy, secant stiffness, and equivalent damping ratio were analyzed at different training strain amplitudes and numbers of loading-unloading cycles. The results demonstrate that the detwinning process shortened with increasing training amplitude, while austenitic mechanical properties were not affected. In addition, superfine SMA wires showed good strain-resistance linear correlation, and the loading rate had little effect on their mechanical properties and electrical resistance sensing characteristics. This study aims to provide an experimental basis for the application of superfine SMA wires in engineering.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.453-456
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• 2009

Impact resistance of shape memory alloy hybrid composite(SMAHC) plates were experimentally investigated. Shape memory alloy(SMA) have large failure strain and failure stress and can absorb large strain energies through phase transformation. SMA wires were embedded in composite plates to improve their weak impact resistance. Tensile tests of SMA wires were performed at various temperature to investigate their thermo-mechanical properties. Low-Velocity impact tests of several types of composite plates with SMA/Al/Fe were performed. Embedding SMA wires was most effective to improve impact resistance of composite plates. The effects of SMA position on impact resistance were also investigated.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.364-370
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• 2019

Fe-Mn-Si-Ni-Cr-TiC alloys have a shape memory property, recovering initial shape by heating. With an aim to improve a durability and stability of building and infrastructure, this Fe-based shape memory alloy (FSMA) can be employed to reinforce concrete structure with creation of compressive residual stress. In this work, corrosion resistance of FSMA was compared with general rebar and S400 carbon steel to evaluate the stability in concrete environment. Potentiodynamic polarization test in de-ionized water, tap-water and 3.5 wt.% NaCl solution with variations of pH was used to compare the corrosion resistance. FSMA shows better corrosion resistance than rebar and S400 in tested solutions. However, Cl-containing solution is critical to significantly reduce the corrosion resistance of FSMA. Therefore, though FSMA can be a promising candidate to replace the rebar and S400 for the reinforcement of concrete structure, serious cautions are required in marine environments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.86-89
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• 1995

In this pacer, The effect of the impedances in SNOSEFT s memory devices has been developed. The effect of source and drain impedances are measuring using the method of the field effect bias resistance in the inner resistance regions of the device structure and external bias resistance. The effect of impedance by source and drain resistance shows according to increasing to the storage of memory charges, shows according to a function of decreasing to the gate voltages, shows the delay of threshold voltages, The delay time of low conductance state and high conductance state by the impedance effect shows 3 [${\mu}$sec] and 1[${\mu}$sec] respectively.

• Applied Microscopy
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• v.42 no.4
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• Journal of Institute of Control, Robotics and Systems
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• v.10 no.11
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• pp.976-980
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• 2004

This study has introduced how to make conducting shape memory polyurethane(CSMPu) as a possible application to smart actuators. Different from conventional polyurethane, CSMPu can have a high conductivity and then electric power supplies enough energy to deform. To prepare conducting polyurethane, carbon nanotubes were incorporated into shape memory polyurethane. Basic experiments to reveal its characteristics have been conducted for a development of actuators. From the results conducted in the present study, optimized conditions for the process of actuating deformation were found. Thermo-electric characteristics such as the relation between temperature and specific resistance and trend curves of resistance variations according to elongations were measured. These data provided a strong possibility of CSMPu as a smart actuator.