• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.10
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• pp.932-935
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• 2015

This paper proposes a rectifier using bootstrapping and active body biasing in $0.11{\mu}m$ RF CMOS process. The proposed rectifier employs the full-wave rectifying structure with cross coupling and increases the power conversion efficiency by reducing the threshold voltage and leakage current using bootstrapping and active bias biasing. Also, it has been designed to be applied to a wide range of applications from 13.56 MHz used in wireless power transmission to 915 MHz used in RFID. As a measured result, 80 % of power conversion efficiency is obtained when the input power is 0 dBm at $10k{\Omega}$ load resistance and 13.56 MHz. Also 40 % of power conversion efficiency is shown in 915 MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.627-634
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• 2010

In this paper, a novel voltage-controlled oscillator(VCO) using the complimentary bifilar archimedean spiral resonator(CBASR) is presented for reducing the phase noise characteristic. A CBASR has compact dimension, a sharp skirt characteristic in stopband, a low insertion loss in passband, and a large coupling coefficient value, which makes a high Q value and improve the phase noise of VCO. The proposed VCO has the oscillation frequency of 2.396~2.502 GHz in the tuning voltage of 0~5 V, the output power of 7.5 dBm and phase noise of -119.16~-120.2 dBc/㎐ at the offset frequency of 100 kHz in tuning range.

• Fashion & Textile Research Journal
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• v.21 no.6
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• pp.697-707
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• 2019

This review paper deals with materials, classification, and a current article investigation on smart textile sensors for wearable vital signs monitoring (WVSM). Smart textile sensors can lose electrical conductivity during vital signs monitoring when applying them to clothing. Because they should have to endure severe conditions (bending, folding, and distortion) when wearing. Imparting electrical conductivity for application is a critical consideration when manufacturing smart textile sensors. Smart textile sensors fabricate by utilizing electro-conductive materials such as metals, allotrope of carbon, and intrinsically conductive polymers (ICPs). It classifies as performance level, fabric structure, intrinsic/extrinsic modification, and sensing mechanism. The classification of smart textile sensors by sensing mechanism includes pressure/force sensors, strain sensors, electrodes, optical sensors, biosensors, and temperature/humidity sensors. In the previous study, pressure/force sensors perform well despite the small capacitance changes of 1-2 pF. Strain sensors work reliably at 1 ㏀/cm or lower. Electrodes require an electrical resistance of less than 10 Ω/cm. Optical sensors using plastic optical fibers (POF) coupled with light sources need light in-coupling efficiency values that are over 40%. Biosensors can quantify by wicking rate and/or colorimetry as the reactivity between the bioreceptor and transducer. Temperature/humidity sensors require actuating triggers that show the flap opening of shape memory polymer or with a color-changing time of thermochromic pigment lower than 17 seconds.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.402-408
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• 2017

In this paper, we analyzed the frequency characteristics of hexagonal spiral thin-film inductor based on non-contact AC coupling for wireless signal transmission. We compared and analyzed the frequency characteristics of the rectangular spiral inductor and the hexagonal spiral inductor according to the number of turns, the line width and the line spacing of the conductor. Hexagonal spiral inductor has more number of turns to has the same inductance as rectangular spiral inductor, but the overall length of the conductors is shortened. This reduces the self inductance and increases the mutual inductance so that the overall inductance can have the same value. Also, since the overall length of the conductor is shortened and the magnetic resistance is reduced, the quality factor and the self-resonant frequency performance can be secured. The proposed hexagonal spiral thin-film inductor has the inductance of 3.54nH at 2GHz, the quality factor of max 14.00 at 5.0GHz and the self-resonant frequency at about 11.3GHz.

• Applied Chemistry for Engineering
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• v.16 no.3
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• pp.422-426
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• 2005

Visible-light activated polymer nanocomposites (PNC) were designed to be used for dental restoration. Hybrid-filler composed of barium silicate and nano-sized silica was adopted as a filler system. To improve the interfacial be havior of the resin matrix of bisphenol A glycerolate methacrylate/triethyleneglycol dimethacrylate, the surface of filler was hydrophobically treated with a silane coupling agent. Mechanical properties of PNC were investigated by measuring the abrasion resistance, and it was discovered that PNC showed excellent properties with an increase of nanofiller content. However, the polymerization shrinkage was consistently maintained under 3 vol% and the shrinkage continued even after photo-polymerization. In addition, a slight color difference between PNC specimens was observed with increase of nanofiller content.

• Journal of Korean Society of Steel Construction
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• v.20 no.2
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• pp.289-301
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• 2008

Double skin composite (DSC) wall is a structural wall that is filed with concrete between two steel plate skins connected by tie bars. This type of wall was developed to enhance the structural performance of wall, to reduce wall thickness, and to enhance constructibility, eliminating the use of formwork and re-bars. In this study, cyclic tests were performed to investigate the inelastic behavior and earthquake resistance of isolated and coupled DSC walls with rectangular and T-shapedcross-sections. The DSC walls showed stable cyclic behaviors, exhibiting excellent energy dissipation capacity. The te st specimens failed by the tensile fracture of welded joints at the wall base and coupling beam and by the severe local buckling of the steel plate. The deformation capacity of the walls varied with the connection details at the wall base and their cross-sectional shapes. The specimens with well-detailed connections at the wall base showed relatively god deformation capacity ranging from 2.0% to 3.7% drift ratio. The load-carrying capacities of the isolated and coupled wall specimens were evaluated considering their inelastic behavior. The results were compared with the test results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.1
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• pp.20-25
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• 2014

There are several severe problems for LED device, the next generation's economy green lighting: as the temperature increases, the lamp efficiency decreases; if the temperature is over $80^{\circ}C$, the lifetime of lighting decreases; Red Shift phenomenon that wavelength of spectrum line moves toward long wavelength occurs; and optical power decreases as $T_j$ increases. Thus, Heat sink design that can minimize the heat of LED device is currently in progress. While the thermal resistance of COB Type LED was reduced by direct coupling of LED chip to the board, residential 13.5W requires Heat sink in order resolve heat issue. This study designed Heat Sink suitable for residential 13.5W COB LED down-light and selected the optimum Fin thickness through flow simulation that packaged the designed Heat Sink and 13.5W COB. And finally it analyzed and evaluated the thermal modes using contacting thermometer.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1491-1493
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• 2000

Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.