• 대한전자공학회논문지
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• 제25권11호
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• pp.1274-1281
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• 1988

전압제어 적분기에 기초를 둔 새로운 전압-제어 발진기를 개발했다. 전체 회로는 operational transconductance amplifier(OTA)와 접지된 커패시터로 실현한 전압제어 적분기와, 슈미트 트리거(Schmitt trigger)로 구성된다. 입력제어 전류는 적분기의 적분 시정수를 변화시키고, 이것에 의해 회로의 발진 주파수가 바뀐다. 제어 전압이 0V일때 회로를 12.21KHz에서 발진시킬 경우, -2V에서 2V의 제어 전압 범위에서 전압-주파수의 변환 감도는 2.473Hz/V이고, 최대 직선 오차는 0.68%이다. 저주파에서 100KHz까지의 주파수 범위에서 회로의 주파수 안정도는 약 +250ppm/$^{\circ}$C이다.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.625-629
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• 2016

Electrical and optical properties of the AC voltage driven organic light-emitting diodes were investigated by measuring the electroluminescence of the device. Device structure of ITO(170 nm)/TPD(40 nm)/Alq3(60 nm)/LiF(0.5 nm)/Al(100 nm) was manufactured using a thermal evaporation. Sinusoidal and square-type AC voltage was applied to the device using a function generator. Amplitude of the applied voltage was 9.0 V, and a frequency was varied from 50 Hz to 50 kHz. Electroluminescence out of the device was measured in a Si photodetector simultaneously with the applied voltage together. An intensity and a delayed residual luminescence from the device were depended on the frequency of the sinusoidal voltage. It is thought to be due to a contribution of the capacitive nature in the equivalent circuit of the device. An electron mobility was estimated using a time constant obtained from the luminescence of the device driven by the square-type AC voltage.

• Journal of Electrical Engineering and Technology
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• 제10권5호
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• pp.2089-2098
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• 2015

With the continuous development in insulation of electrical equipment design, the reliability of the system has been enhanced. However, in the manufacturing process and during operation under continues stresses introduce local defects, such as voids between interfaces that can responsible to occurrence of partial discharge (PD), electric field distortion and accumulation of charges. These defects may lead to localize corrosion and material degradation of insulation system, and a serious threat to the equipment. A model of three layers of PI film with air gap is presented to understand the influence of interface and voids on exploitation conditions such as strong electrical field, PD activity and charge movement. The analytical analysis, and experimental results are good agreement and show that the lose contact between interfaces accumulate more residual charges and in consequences increase the electric field intensity and accelerates internal discharges. These residual charges are trapped charges, injected by the electrodes has often same polarity, so the electric field in cavities increases significantly and thus partial discharge inception voltage (PDIV) decreases. Contrary, number of PD discharge quantity increases due to interface. Interfacial polarization effect has opposite impact on electric field and PDIV as compare to void.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.553-556
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• 2008

We hereby report novel driving scheme to eliminate effect of "residual" image sticking (RRI) problem which arises due to hysteresis problem in Thin Film Transistor (TFT) in AMOLED Displays. The driving scheme applies "black" voltage after every data voltage period in order to drive AMOLED in uni-direction. The system can be easily implemented with 120 Hz driving scheme which is well matured in AMLCD industries. Our analyses show systematic evaluation of the problem and thereby solving it by simple methods which will be significantly effective of driving OLED towards mass manufacturing stage.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 추계학술대회
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• pp.216-217
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• 2019

The battery powered electric vehicle (EV) is one of most promising technologies in 21^st century. Though the lithium batteries are playing an important role in the EVs, they are only applicable until their capacities reach 80%, the end of its useful first life. Yet, these batteries can live a second life such as Energy Storage Systems (ESS). In order to utilize the Residual Useful Life (RUL) of the batteries the State of Health (SOH) of them needs to be estimated by a nondestructive test such as Electrochemical Impedance Spectroscopy (EIS) technique. Though many kinds of different EIS instruments are commercially available, most of them can only test a battery module less than 10V and the price of the instrument is very high. In this paper a low-cost EIS instrument suitable for measuring the impedance spectrum of the high voltage battery module is proposed and its validity is verified through the experiments. In order to prove the accuracy of the developed EIS instrument its measured impedance spectrum is compared with the results obtained by a commercial instrument. The Chi Square value calculated between two impedance spectrum measured by both developed and commercial instruments are less than 2%, which prove the strong correlation between two results.

• 대한안전경영과학회지
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• 제4권4호
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• pp.137-146
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• 2002

In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.47-47
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• 2010

Discharge under the water is very hard and demand considerable high voltage. But specially improved electrode can generate plasma discharge to salty water with relatively low voltage. A round shape ceramic electrode having many pinholes combined with metallic one can generate plasma. 400 volt, 10 kHz and 3 micro second pulse width were applied to repeatedly running synthetic seawater with 10 L/m velocity, containing cultivated E. coli and Bacillus. As a result, 18, 94, 99.97, 100, 100 % disinfection rates to E. coli and 17.1, 17.1, 82.9, 99.4, 99.9 % disinfection rates to Bacillus subtilis were achieved to 1, 2, 3, 4, 5 times repetitive treatment respectively. In the plasma condition, the ions and electrons are separated and new kinds of components are re-synthesized by the intensive movement of the components. Especially chlorine ions are separated and recombined to residual free chlorine like HOCl, $OCl^-$. The residual free chlorine concentrations of discharged water were 0.25, 0.88, 1.39, 1.59, 1.66 mg $Cl_2$/L after 5 times treatment respectively. Another unconfirmed radical and oxidants for example, OH, $H_2O_2$, and $O_3$ can have an effect on microorganism of course.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• 한국표면공학회지
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• 제40권2호
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.87.2-87.2
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• 2011

Many type of fuel cell stacks have been developed to improve the efficiency of reactants usage. The cascade type fuel cell stack using dead end operation is able to attain above 99% usage of hydrogen and oxygen. It is sectionalized to several parts and the residual reactants which are used previous parts would be supplied again to next parts which have less number of cells in dead end operation stack. The oversupply of reactants which is usually 120%~150% of the theoretical amount to generate current for preventing the flooding effect could be provided to each part except the last one. The final section which is called monitoring cells is supposed to be supplied insufficient the fuel or oxidant that would have some accumulated inert gas from former parts. It makes some voltage drop in the part and the fresh reactants must be supplied to the part for recovering it by venting the residual gas. So the usage of fuel and oxidant is depend on the time and frequency of opening valves for venting of residual gas and it is important to optimize the vent logic for achieving higher usage of hydrogen and oxygen. In this research, many experiments are performed to find optimal condition by evaluating the effect of time and frequency under several power conditions using over 100kW class fuel cell module. And the characteristics of the monitoring cells are studied to know the proper cell voltage which decide the condition of opening the vent valve for stable performance of the cascade type fuel cell module.