• Title/Summary/Keyword: Residual Gas

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Residual Life Assessment of mod HP Reformer Tubes Using Surface Replication Methods (표면복제를 사용한 mod HP강 개질로 튜브의 잔여수명 평가에 대한 연구)

  • Ryu, Hyung Ki;Le, Thi Giang;Bang, Hyo Jung;Yoon, Kee Bong
    • Journal of the Korean Institute of Gas
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    • v.25 no.5
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    • pp.30-36
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    • 2021
  • Residual life assessment of reformer tubes of mod HP steel used in the refinery and petrochemical industry were investigated by quantitative metallographic evaluation method. Area fractions of precipitated carbides were measured by using surface replication and its relationship with the remaining life of the tube was investigated. The microstructures of the virgin and other tubes were examined using optical microscopy (OM) for service periods of 1.8, 6.0, 7.2, 8.5, 9.7, and 16.2 years at 950 ℃ and the area fractions of the precipitates were measured by image analysis using ImageJ software. As the area fraction of the precipitates increased, the residual life was decreased accordingly. The results showed that the LMP was the highest in the virgin and the LMP decreased as the service time increased and the residual life decreased. A regressional equation showing the relation between the area fraction of carbides and LMP was experimentally derived. The obtained relationship can be used with the surface replication method for on-site residual life assessment.

ZEUS Co. Ltd

  • 강신국
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.50-50
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    • 2000
  • 당사는 1970년 제우스 콤 상사로부터 출발하여 1988년 12우러 주식회사 제우스로 법인 전환한 후 현재 한국반도체 산업협회 및 회원으로 등록 활동하고 있다. 이번 발표에서는 회사에 대한 소개와 함께 취급품목을 설명하고자 한다. 취급품목은 Ion beam sources(CSC), E-beam evaporator & E-beam source(Temescal), Residual Gas Analyzer(SPECTRA), Cryopump & Waterpump(CTI-Cryogenics), Thickness Monitor & Controller, Electrical Feedthrough, RTP system, Thin Film Analyzer, PECVD, RIE 등이다.

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Molecular gas and star formation in early-type galaxies

  • Bureau, Martin
    • The Bulletin of The Korean Astronomical Society
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    • v.36 no.2
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    • pp.65-65
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    • 2011
  • Early-type galaxies represent the end point of galaxy evolution and, despite pervasive residual star formation, are generally considered "red and dead", that is composed exclusively of old stars with no star formation. Here, their molecular gas content is constrained and discussed in relation to their evolution, supporting the continuing importance of minor mergers and/or cold gas accretion. First, as part of the Atlas3D survey, the first complete, large, volume-limited survey of CO in normal early-type galaxies is presented. At least of 23% of local early-types possess a substantial amount of molecular gas, the necessary ingredient for star formation, independent of mass and environment but dependent on the specific stellar angular momentum. Second, using CO synthesis imaging, the extent of the molecular gas is constrained and a variety of morphologies is revealed. The kinematics of the molecular gas and stars are often misaligned, implying an external gas origin in over a third of all systems, more than half in the field, while external gas accretion must be shot down in clusters. Third, many objects appear to be in the process of forming regular kpc-size decoupled disks, and a star formation sequence can be sketched by piecing together multi-wavelength information on the molecular gas, current star formation, and young stars. Fourth, early-type galaxies do not seem to systematically obey all our usual prejudices regarding star formation (e.g. Schmidt-Kennicutt law, far infrared-radio continuum correlation), suggesting a greater diversity in star formation processes than observed in disk galaxies and the possibility of "morphological quenching". Lastly, a first step toward constraining the physical properties of the molecular gas is taken, by modeling the line ratios of density- and opacity-sensitive molecules in a few objects. Taken together, these observations argue for the continuing importance of (minor) mergers and cold gas accretion in local early-types, and they provide a much greater understanding of the gas cycle in the galaxies harbouring most of the stellar mass. In the future, better dust masses and dust-to-gas mass ratios from Herschel should allow to place entirely independent constraints on the gas supply, while spatially-resolved high-density molecular gas tracers observed with ALMA will probe the interstellar medium and star formation laws locally in a regime entirely different from that normally probed in spiral galaxies.

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Refining of Invar and Permalloy Fe-Ni Alloys by $Ar/Ar-H_2$ Plasma and Electron Beam Melting (Ar/Ar-$H_2$ 플라즈마 및 전자선 용해에 의한 인바 및 퍼멀로이 Fe-Ni 합금의 정련)

  • Park, Byung-Sam;Baik, Hong-Koo
    • Journal of Korea Foundry Society
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    • v.15 no.2
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    • pp.175-183
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    • 1995
  • It is difficult to remove such interstitial impurities as sulfur, oxygen, hydrogen and carbon in Fe-Ni alloys. Thermodynamic and kinetic studies were carried out on the behavior of hydrogen gas, oxygen gas, Si, Al and slag, and the reaction time by the $Ar/Ar-H_2$ plasma and electron beam melting. After the addition of Al, Si, they were melted by Ar plasma with reaction time changed. 80%Ni-Fe alloys showed a better deoxidation than 36%Ni-Fe alloys. At $Ar-H_2$ plasma melting, the deoxidation was significant. In the case of the electron beam melting, the residual oxygen was higher than in Ar plasma melting because electron beam melting temperature was lower than that of Ar plasma. For the decaburization, it was melted by $Ar-O_2$ plasma melting, which could remove effectively carbon by activated oxygen in plasma. We added slag to Fe-Ni alloys for the desulfurization. As the result of this experiments, the amount of residual sulfur was not changed according to the slag ratio and reaction time.

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Corrosion at the Grain Boundary and a Fluorine-Related Passivation Layer on Etched Al-Cu (1%) Alloy Surfaces

  • Baek, Kyu-Ha;Yoon, Yong-Sun;Park, Jong-Moon;Kwon, Kwang-Ho;Kim, Chang-Il;Nam, Kee-Soo
    • ETRI Journal
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    • v.21 no.3
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    • pp.16-21
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    • 1999
  • After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

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과학위성1호 비행모델 Bake-Out 시험결과 분석

  • Cho, Hyok-Jin;Seo, Hee-Jun;Lee, Sang-Hoon;Cho, Chang-Lae;Moon, Guee-Won;Choi, Seok-Weon
    • Aerospace Engineering and Technology
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    • v.2 no.2
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    • pp.45-49
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    • 2003
  • A Bake-Out test for STSAT-1 FM(Flight Model) was performed in a Bake-Out Chamber at SITC(Satellite Integration & Test Center) in KARI(Korea Aerospace Research Institute). The purpose of this test is to measure and analyze the outgassing rate to affect the optical equipment(FIMS) and to eliminate contaminants through the high temperature bake-out. This Bake-Out test is composed of three parts which are honeycomb panels & harnesses(Batch 1), an assembled satellite(Batch 2), and a disassembled satellite(Batch 3). For each test, quantitative and qualitative measurements and analysis were performed using TQCM(Thermoelectric Quartz Crystal Microbalance) and RGA(Residual Gas Analyzer.)

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The Study of Silica Surface Reaction with Fluorocarbon Plasma Using Inductively Coupled Plasma (Inductively Coupled Plasma에 의한 fluorocarbon 가스 플라즈마의 실리카 표면 반응 연구)

  • Park, Sang-Ho;Shin, Jang-Uk;Jung, Myung-Young;Choy, Tae-Goo;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.472-476
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    • 1998
  • The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

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A study on a room temperature and high temperature exhaust and the Improvement of discharge characteristics of ac PDP (AC-PDP의 상온과 고온 배기에서의 방전 특성에 관한 연구)

  • Choi, M.S.;Kim, Y.R.;Choi, Y.C.;Park, C.S.;Kim, D.H.;Lee, H.J.;Park, C.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.162-164
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    • 2002
  • The luminance and discharge characteristics of ac PDP are significantly affected by $H_2O$ or a small amount of residual gas in ac PDP. These residual gases such as $H_2O$, Air, CO and $CO_2$ can be contained in the manufacturing or discharge process. By high temperature annealing, this impurity gas can be decreased. The sample exhausted at high temperature showed better discharge characteristics than those exhausted in $25^{\circ}C$. As a result, the high temperature exhaust causes lower discharge voltage and shorter aging time.

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Growth of Single Crystalline 3C-SiC Thin Films for High Power Devices by CVD (CVD에 의한 고전력 디바이스용 단결정 3C-SiC 박막 성장)

  • Chung, Gwiy-Sang;Shim, Jae-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.98-102
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    • 2010
  • This paper describes that single crystalline 3C-SiC (cubic silicon carbide) thin films have been deposited on carbonized Si(100) substrates using hexamethyldisilane (HMDS, $Si_2(CH_3){_6}$) as a safe organosilane single precursor and a nonflammable mixture of Ar and $H_2$ gas as the carrier gas by APCVD at $1280^{\circ}C$. The deposition was performed under various conditions to determine the optimized growth condition. The crystallinity of the 3C-SiC thin film was analyzed by XRD (X-ray diffraction). The surface morphology was also observed by AFM (atomic force microscopy) and voids between SiC and Si interfaces were measured by SEM (scanning electron microscopy). Finally, residual strain and hall mobility was investigated by surface profiler and hall measurement, respectively. From these results, the single crystalline 3C-SiC film had a good crystal quality without defects due to viods, a low residual stress, a very low roughness.