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검색결과 535건 처리시간 0.023초

Effect of Oxygen Annealing on the Set Voltage Distribution Ti/MnO2/Pt Resistive Switching Devices

  • Choi, Sun-Young;Yang, Min-Kyu;Lee, Jeon-Kook
    • 한국재료학회지
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    • 제22권8호
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    • pp.385-389
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    • 2012
  • Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using $MnO_x$ thin films. The $V_{set}$ of the as-grown $MnO_x$ film ranged from 1 to 6.2 V, whereas the $V_{set}$ of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an $MnO_x$ film leads to an increase in $Mn^{4+}$ content at the $MnO_x$ film surface with a subsequent change in the $Mn^{4+}/Mn^{3+}$ ratio at the surface. This was attributed to the change in $Mn^{4+}/Mn^{3+}$ ratios at the $MnO_x$ surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of $MnO_x$ thin films. In addition, crystalline $MnO_x$ can help stabilize the $V_{set}$ and $V_{reset}$ distribution in memory switching in a Ti/$MnO_x$/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and $MnO_x$.

에셔(M. C. Escher) 작품의 프랙탈 속성에 관한 연구 (A Study on the Attributes of Fractal on M.C. Escher′s Works)

  • 류시천;윤찬종
    • 디자인학연구
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    • 제15권1호
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    • pp.5-14
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    • 2002
  • Fractal which was named by Mandelbrot in 1975 and its theory have been taken notice of many fields of scholarship, namely mathematics, physics, geography, architecture, art, philosophy and so on. If we approach Fractal on the basis of the designing cogitation, it can be used not only as one of materials to take a crease thinking in design, also as a due of the methods to assess the design problem with a new point of view. Based on above background, in this study, it was studied on the graphic artist, Morits Collelius Escher who has been well known as the great artist of illusion," and on the attributes of Fractal which were contained in his various work\ulcorner As a reset, the four attributes, namey ′fractal dimension′, ′self-similarity, ′recursiveness′and ′infinity were founded in his works. Also, it was founded that Escher had employed the attributes of Fractal in his almost works for "the representation of the condition of unified-duality," that is to say, for the union of two different dimensions. After this, it is expected that this study shoed be extended to the development of the principle of Fractal-Design on the basis of ′Fractal which can be defined as the phenomenon of repetitious pattern between chaos and order and′the formative beauty of Fractal′.

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Flexible Microelectronics; High-Resolution Active-Matrix Electrophoretic Displays

  • Miyazaki, Atsushi;Kawai, Hideyuki;Miyasaka, Mitsutoshi;Nebashi, Satoshi;Shimoda, Tatsuya;McCreary, Michael
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.575-579
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    • 2005
  • A beautiful, flexible active-matrix electrophoretic display (AM-EPD) device is reported. The flexible AM-EPD device has a $40.0{\times}30.0\;mm^2$ display area, measures about 0.27 mm in thickness, weighs about 0.45 g and possesses only 20 external connections. The flexible AM-EPD device displays clear black-and-white images with 5 gray-scales on $160{\times}120$ pixels. The display is free from residual image problems, because we use an area-gray-scale method on $320{\times}240$ EPD elements, each of which is driven with binary signals. Each pixel consists of 4 EPD elements. In addition, since the response time of the electrophoretic material is as long as approximately 400 ms and since the display possesses a large number of EPD elements, we have developed a special driving method suitable for changing EPD images comfortably. A complete image is formed on the AM-EPD device, consisting of a reset frame and several, typically 6, image frames.

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보조 반사체를 이용한 광섬유 페브리페로 간섭계형 온도센서의 성능향상 (Unambiguous Fiber Fabry-Perot Temperature Sensor by an Additional Partial Mirror)

  • 김광수;이홍식
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권7호
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    • pp.418-423
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    • 2000
  • The fiber Fabry-Perot interferometric(FFPI) sensor is well known in the field of industrial diagnosis due to its outstanding properties such as tiny size, simple and rugged structure, and easy interrogation. As other fiber interferometric sensors, it also suffers from ambiguous output caused by highly periodic feature in its optical transfer function. In most cases, the ambiguity leads to relatively short dynamic operating range and long processing time during power-on reset, which limits its application to some specific fields requiring very high resolution. In this paper a method based on double sensing scheme was proposed to overcome the above difficulty. By employing a fringe selection auxiliary FFPI sensor the original FFPI sensor can identify its true position on the phase domain. The performance test with 10mm FFPI sensor and a thermocouple temperature sensor for reference shows wide dynamic range 0-900$\ell$ keeping a reasonable resolution of 0.1$\ell$ over the entire range.

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볼로미터형 적외선 센서의 신호처리회로 설계 및 특성 (Design and analysis of a signal readout integrated circuit for the bolometer type infrared detect sensors)

  • 김진수;박민영;노호섭;이승훈;이제원;문성욱;송한정
    • 센서학회지
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    • 제16권6호
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    • pp.475-483
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    • 2007
  • This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

제어법칙 간 상호 전환 시 과도응답 최소화를 위한 전환시간에 관한 연구 (A Study on the Conversion Time to Minimize of Transient Response during Inter-Conversion between Control Laws)

  • 김종섭
    • 항공우주시스템공학회지
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    • 제9권1호
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    • pp.12-18
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    • 2015
  • The inter-conversion between different control laws in flight has a lot of risk. The SWM(Switching Mechanism) including logic and stand-by mode is designed to analyze the transient response of aircraft during inter-conversion between different control laws, based on the in-house software for non-real-time and real-time simulation. The SWM applies the fader logic of TFS(Transient Free Switch) to minimize the transient response of an aircraft during the inter-conversion, and applies the reset '0' type of the stand-by mode to prevent surface saturation due to integrator effect in the disengaged flight control law. The transition time is also important to minimize the objectionable transient response in the inter-conversion, as well as the transition control law design. This paper addresses the results of non-real-time simulation for the characteristics of transient response to different transition time to select the adequate transient time, and the real-time pilot evaluation, using SSWM(Software Switching Mechanism) and HSWM(Hardware Switching Mechanism), which is met for Level 1 flying qualities and assures safety of flight.

하전 입자 효과를 이용한 Plasma Display Panel의 고속 구동 파형에 관한 연구 (Studies on High Speed Addressing Driving Scheme using the Priming Effect in Plasma Display Panel)

  • 신범재;박상식
    • 조명전기설비학회논문지
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    • 제23권2호
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    • pp.45-52
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    • 2009
  • 본 연구는 Full-HD급 PDP의 고속 구동 구현을 위한 새로운 구동 방식에 관한 연구이다. 새로운 SPA (self-priming address) 구동 파형은 어드레스 구간에서 지속적인 프라이밍 방전을 유지하여 하전 입자 효과를 이용하여 어드레스 방전 지연 시간을 개선하기 위하여 제안되었다. 본 연구에서는 프라이밍 방전의 기본 특성에 대해 조사하였으며, 안정적인 프라이밍 방전을 유지할 수 있는 초기화 펄스 및 프라이밍 램프 펄스를 도출하였다. 특히, 프라이밍 램프 펄스의 기울기가 0.1[$V/{\mu}s$]의 미약한 프라이밍 방전의 경우에 대해서도 기존 방식의 1.2[${\mu}s$]의 어드레스 방전 지연 시간을 0.8[${\mu}s$]로 획기적으로 개선할 수 있는 것을 확인하였다.

Phase Change Memory와 Capacitor-Less DRAM을 사용한 Unified Dual-Gate Phase Change RAM (Unified Dual-Gate Phase Change RAM (PCRAM) with Phase Change Memory and Capacitor-Less DRAM)

  • 김주연
    • 한국전기전자재료학회논문지
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    • 제27권2호
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    • pp.76-80
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    • 2014
  • Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

광대역 고출력 전자기 펄스에 의한 마이크로컨트롤러 소자의 매개변수들의 민감성 분석 (The Sensitivity of the Parameters of Microcontroller Device with Coupling Caused by UWB-HPEM (Ultra Wideband-High Power Electromagnetics))

  • 황선묵;홍주일;허창수
    • 전기학회논문지
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    • 제59권2호
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    • pp.369-373
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    • 2010
  • Modem electronic circuits are of importance for the function of communication, traffic systems and security systems. An intentional threat to these systems could be of big casualties and economic disasters. This paper has shown damage effect of microcontroller device with coupling caused by UWB-HPEM(Ultra Wideband-High Power Electromagnetics). The UWB measurements were done at an Anechoic Chamber using a RADAN UWB voltage source, which can generate a transient impulse of about 180 kV. The susceptibility level for microcontroller has been assessed by effect of various operation line lengths. The results of susceptibility analysis has showed that the effect of the reset line length on the MT(Ma1function Threshold) is larger than the effect of the different line length(Data, Power, Clock). With the knowledge of these parameters electronic system can be designed exactly suitable concerning the system requirements. Based on the results, susceptibility of microcontroller can be applied to protection plan to elucidate the effects of microwaves on electronic equipment.

에너지 회생 스너버를 적용한 3레벨 DC/DC 컨버터 (Three Level DC/DC Converter Using Energy Recovery Snubber)

  • 조용현;김윤호;김은수
    • 전력전자학회논문지
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    • 제6권1호
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    • pp.64-73
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    • 2001
  • 영전압 영전류 스위칭 3레벨 DC/DC 컨버터를 제안한다. 이 컨버터는 높은 순환 에너지, 정류다이오드들의 제한적인 기생순환, 그리고 내부 스위치에 의한 제한된 영전암 스위칭 부하뜰 갖는 일반적인 영전압 영전류 스위칭 3레벨 DC/DC 컨버터 약점을 극복한다. 본 논문에서 제안된 컨버터는 외부스위치가 영전압 스위칭을 이룰 수 있도록 하고 1차 측에 플라잉 커패시터로 위상전이 제어하도록 되었다. 또 컨버터는 내부 스위치플이 영전류 스위칭을 이루는 구간동안 l차 측에 에너지 회생 스너버에 의해 리셋 하는 보조회로를 갖는다. 제안된 컨버터들은 6kW, 30kHz 의 실험 장치를 제작하였고 해석하였다.

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