• Title/Summary/Keyword: Removal device

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Effect of Amine Functional Group on Removal Rate Selectivity between Copper and Tantalum-nitride Film in Chemical Mechanical Polishing

  • Cui, Hao;Hwang, Hee-Sub;Park, Jin-Hyung;Paik, Ungyu;Park, Jea-Gun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.546-546
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    • 2008
  • Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

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Inter-operation between the mobile device and external device (모바일 단말과 외부 장치 모듈과의 자동 연동 시스템)

  • Kim, Sang-Tae;Kim, Hyun-Deok;Park, Won-Kyu;Park, Yoon-Jung;Kim, Young-Cheol;Jung, Youn-Wha;Kim, Won-Gi;Park, Hong-Bae
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.705-706
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    • 2006
  • A novel plug and play system for a mobile device has been proposed and demonstrated to provide an easy inter-operation between the mobile device and external modules. It supports an automatic installation and execution of the device drivers stored in the external modules into the mobile devices when the external module is connected to the mobile device. It also enables an automatic removal of the derivers when the external module is disconnected from the mobile device, which makes the user use the resource of the mobile devices more efficiently.

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Potential Exposure to Air Pollutants for Driver and Its Control Using Commercial Air Cleaning Device Inside Vehicle (차량 운전자의 공기오염물질 잠재적 노출 및 차량용 공기청정기에 의한 제어)

  • Kim Dae-Won;Kim Moon-Hyeon;Yang Won-Ho
    • Journal of Environmental Health Sciences
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    • v.30 no.5 s.81
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    • pp.481-486
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    • 2004
  • Vehicle occupant exposure to air pollutants has been a subject of concern in recent years because of higher levels of air pollutants inside gasoline or diesel-using vehicle, comparing to the surrounding atmosphere. Contrary to previous studies, fuel of vehicles operated in this study was liquefied petroleum gas (LPG). This study examined the potential exposure and removal efficiency of selected volatile organic compounds (VOCs), nitrogen dioxide ($NO_2$) and respirable suspended particle (RSP) by commercial air cleaning device inside vehicle under different ventilation conditions. Vehicle concentrations inside of benzene, toluene, m,p-xylene, $NO_2$ and RSP were lower under the low ventilation condition. This was indicated that outdoor air pollutants could affect the vehicle air quality inside in case metropolitan cities such as Daegu. The urban vehicle concentrations inside of benzene, toluene, m,p-xylene, $NO_2$ and RSP with air cleaning device were higher than those without air cleaning device. This means that the use of air cleaning device equipped with activated carbon filter, which was used in this study, in the interior of vehicles could be expected to reduce the vehicle occupants exposure to air pollutants effectively. In batch type reactor of laboratory scale, removal efficiencies of air cleaning device used were $97.0\%,\;95.7\%,\;94.6\%\;and\;85.5\%$ respectively in benzene, toluene, m,p-xylene and $NO_2$.

A Study on the Removal of Native Oxide on a Silicon Surface Using UV-Excited $F_2/H_2$ (UV-excited $F_2/H_2$를 이용한 실리콘 자연산화막 제거에 관한 연구)

  • Choi, S.H.;Choi, J.S.;Kim, S.I.;Koo, K.W.;Chun, H.G.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1528-1530
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    • 1997
  • As device size shrinks, contamination will increasingly affect the reliability and yield of device. Therefore, contaminants must be removed from the surfaces of Si wafers prior to each process. But it becomes out increasingly difficult to clean silicon surfaces with finer patterns by the conventional wet treatment because of the viscosity and surface tension of solutions. Hence, a damage less dry cleaning process is needed for the silicon surfaces. For the removal of Si native oxide by UV-enhanced dry cleaning. $F_2$ gas and $F_2/H_2$ mixed gas were applied. As a result of analysis, UV-enhnaced $F_2/H_2$ treatment is more suitable than UV-enhanced $F_2$ treatment for removal of native oxide on the surfaces of Si wafers.

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Analysis on an Oxidation-Reduction Reaction of Photocatalytic Plasma Complex Module

  • KIM, Young-Do;KWON, Woo-Taeg
    • Journal of Wellbeing Management and Applied Psychology
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    • v.5 no.2
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    • pp.21-27
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    • 2022
  • Purpose: This study is about photocatalytic technology and plasma oxidation-reduction technology. To the main cause of exposure to odor pollution, two deodorization techniques were applied to develop a module with higher removal efficiency and ozone reduction effect. Research design, data and methodology: A composite module was constructed by arranging two types of dry deodorization equipment (catalyst, adsorbent) in one module. This method was designed to increase the responsiveness to the components of complex odors and the environment. standard, unity, two types of oxidizing photo-catalyst technology and plasma dry deodorization device installed in one module to increase the potential by reduction to 76% of ozone, 100%, and 82%. Results: The complex odor disposal efficiency was 92%. Ammonia was processed with 50% hydrogen sulfide and 100% hydrogen sulfide, and ozone was 0.01ppm, achieving a target value of 0.07ppm or less. The combined odor showed a disposal efficiency of 93%, ammonia was 82% and hydrogen sulfide was 100% processed, and ozone achieved a target value of 0.07 ppm or less. Conclusions: Ozone removal efficiency was 76% by increasing Oxidation-Reduction Reaction(ORR). The H2S removal efficiency of the deodorizer was higher than that of the biofilter system currently used in sewage disposal plants.

Optimization of CMP Process Parameter using Semi-empirical DOE (Design of Experiment) Technique (반경험적인 실험설계 기법을 이용한 CMP 공정 변수의 최적화)

  • 이경진;김상용;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.11
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    • pp.939-945
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    • 2002
  • The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing (CMP) process in 0.18 $\mu\textrm{m}$ semiconductor device. However, it still has various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. In this paper, we studied the DOE (design of experiment) method in order to get the optimized CMP equipment variables. Various process parameters, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal CMP process parameters.

Effects of Residual PMMA on Graphene Field-Effect Transistor

  • Jung, J.H.;Kim, D.J.;Sohn, I.Y.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.561-561
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    • 2012
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

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Comparing geometric parameters of a hydrodynamic cavitation process treating pesticide effluent

  • Randhavane, Shrikant B.
    • Environmental Engineering Research
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    • v.24 no.2
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    • pp.318-323
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    • 2019
  • Paper focuses on comparison between two different orifice plate configurations (plate number 1 and plate number 2) used as cavitating device in the hydrodynamic cavitation reactor for improving pollutant removal efficiencies. Effect of four different parameters such as hydraulic characteristics (in terms of range of flow rates, orifice velocities, cavitation number at different inlet pressures); cavitation number (in range of 5.76-0.35 for plate number 1 and 1.20-0.35 for plate number 2); inlet pressure (2-8 bars) and reaction time (0 to 60 min) in terms of chemical oxygen demand (COD) removal and chlorpyrifos degradation has been studied and compared. Optimum inlet pressure of 5 bars exists for degradation of pollutants for both the plates. It is found that geometry of orifice plate plays important role in removal efficiencies of pollutant. Results obtained confirmed that orifice plate 1 with configuration of 1.5 mm 17 holes; cavitational number of 1.54 performed better with around 60% COD and 98% chlorpyrifos removal as compared to orifice plate 2 having configuration of 2 mm single hole; cavitational number of 0.53 with 40% COD and 96% chlorpyrifos in 2 h duration time.

Implementation of Reflection Removal Algorithm on Mobile Device (모바일 장치에서 반사 잔상 제거 알고리즘 구현)

  • Lee, YuKyong;Lee, Yong-Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.1
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    • pp.108-112
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    • 2021
  • Undesired reflection removal from an image captured through glass window is widely needed with the prevalence of camera. In this paper, we present and implement a reflection removal algorithm, which is specially designed for smart devices. Our implementation requires smart phone application to take two input pictures of the same target, one with flash light on and another with flash light off. Then, we find a flash spot in the picture, match the features to align the input pictures, transform the color space, and finally combine the pictures. As the result, we get a resulting image with removed reflection, achieving the visually pleasant.