• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1992년도 추계학술발표강연 및 논문개요집
• /
• pp.28-29
• /
• 1992

• 한국진공학회지
• /
• 제4권S1호
• /
• pp.1-6
• /
• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• E2M - 전기 전자와 첨단 소재
• /
• 제8권2호
• /
• pp.171-175
• /
• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• 공업화학
• /
• 제20권5호
• /
• pp.536-541
• /
• 2009

플라즈마 중합 아크릴산 필름을 원격 플라즈마 방식으로 Si과 KBr 기판 위에 증착하였다. 플라즈마 출력, 반응 압력, 간접 플라즈마 방식이 필름의 성장속도, 화학적 구조 및 화학 결합 상태 등에 미치는 영향을 조사하였다. 화학 구조와 화학적 상태는 FT-IR, XPS 분석과 curve fitting 기법으로 분석하였다. 플라즈마 출력에 따른 필름의 성장속도는 100 W에서 포화값을 보이지만, 압력에 대해서는 300 mtorr에서 최대값을 나타내었다. 플라즈마 출력을 높이거나 압력을 낮추면 단위 입자들에게 가해지는 에너지 값(W/FM)이 증가하여 아크릴산 분자의 파괴가 촉진되었다. XPS curve fitting 분석 결과, W/FM값이 커질수록 카르복실 COO 결합은 감소하지만 에테르 C-O 결합과 카보닐 C=O 결합은 증가하여 서로 반대의 경향을 보임을 확인하였다.

• 한국전기전자재료학회논문지
• /
• 제31권5호
• /
• pp.320-323
• /
• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• 한국진공학회지
• /
• 제7권1호
• /
• pp.43-50
• /
• 1998

원격플라즈마화학증착(RPCVD)에 의하여 파이렉스 유리 기판 위에 투명전도성 산화 주석막을 제조하였다. RPCVD공정의 주요한 조절변수는 증착시간, 사메틸주석, 산소 및 아 르곤의 유속, 라디오 주파수 출력, 및 기판온도를 포함했다. 양질의 산화주석막을 제조하고 RPCVD공정을 보다 잘 이해하기 위하여 이들 파라미터에 대한 증착속도, 전기적 저항, 광 학적 투과도 및 결정구조의 의존성을 체계적으로 살펴보았다. 산화주석막의 성질에 미치는 이들 파라미터의 영향은 복잡하게 서로 연관되어 있다. 최적화된 증착조건에서 제조된 산화 주석막은 102$\AA$/min의 증착속도, $9.7\times 10^{-3}\Omega$cm의 비저항 및 ~80%의 가시선 투과도를 나 타냈다.

• 한국진공학회지
• /
• 제3권4호
• /
• pp.426-433
• /
• 1994

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.513-516
• /
• 1987

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

• 한국진공학회지
• /
• 제4권S2호
• /
• pp.64-68
• /
• 1995

Silicon films were deposited at $430^{\circ}C$ by remote plasma chemical vapor deposition(RPECVD) with a gas mixture of $Si_2H_6/SiF_4/H_2$. The silicon films deposited without and with $SiF_4$ were characterized using atomic force microscopy(AFM), transmission electron microscopy(TEM) and X-ray diffraction(XRD). Both silicon films have the same rugged surface morphology, but, the silicon film deposited with $SiF_4$ exhibits more rugged. The silicon film deposited without $SiF_4$ is amorphous, whereas the silicon film deposited with $SiF_4$ is polycrystalline with very small needle-like grains which are perpendicular to the substrate and uniformly distributed in the thickness of the film. The silicon film deposited with $SiF_4$ was found to have a preferred orientation along the growth direction with the<110> of the film parallel to the <111> of the substrate. The effect of $SiF_4$ during RPECVD was discussed.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(2)
• /
• pp.611-615
• /
• 2003

In this paper, a operation characteristics and analysis of the HB(half bridge) inverter for remote plasma system are studied. the remote plasma system is cleaning system for the chemical vapor deposition (CVD) chamber in semiconductor processing. The remote plasma system is powered by the RF generator The main power stage of the RF generator is used for the HB PWM inverter with an low pass filter in the secondary circuit of the transformer. The detailed mode analysis of HB invertor was described. The operation characteristics of Remote Plasma Source are verified by simulation and experimental results.