Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication and Characterization of a-Si:H Films by a Remote Plasma Enhanced CVD

Remote Plasma Enhanced CVD에 의한 수소화된 비정질 실리콘 박막의 제작 및 특성연구

  • Yang, Young-Sik (Dept. of Physics & Research Institute for Basic Science Kyung Hee University) ;
  • Yoon, Yeer-Jean (Dept. of Physics & Research Institute for Basic Science Kyung Hee University) ;
  • Jang, Jin (Dept. of Physics & Research Institute for Basic Science Kyung Hee University)
  • 양영식 (경희대학교 물리학과 및 기초과학 연구소) ;
  • 윤여진 (경희대학교 물리학과 및 기초과학 연구소) ;
  • 장진 (경희대학교 물리학과 및 기초과학 연구소)
  • Published : 1987.07.03
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films have been deposited, for thye first time, by a remote plasma chemical vapor deposition. The hydrogen radical play a important role to control the deposition rate, The bonded hydrogen content to silicon is independent of hydrogen partial pressure in the plasma. Optical gap of deposited a-Si:H lies between 1.7eV and 1.8eV and all samples have sharp absorption edge. B-doped a-Si:H films by a RPECVD has a high doping efficiency compared with plasma CVD. The Fermi level of 100ppm B-doped film lies at 0.5eV above valence band edge.

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