Effects of $N_2$ and NO addition of fast silicon layer chemical dry etching in $F_2/Ar$ remote plasma processing
(빠른 실리콘 식각에 대한 $F_2/Ar$ 리모트 플라즈마와 $N_2$ 와 NO 첨가효과)
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- Proceedings of the Korean Institute of Surface Engineering Conference
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- 2006.10a
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- pp.73-73
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- 2006