• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.644-647
• /
• 2003

Resulting from reproducibility and possibility of mass production. many researches to fabricate micro lens array using lithography have been developed. However, it still remains the level of fabricating compensation lens. Therefore, to realize the fabrication of lens having high numerical aperture can be the key technology of ultra slim optical system. Reflow phenomenon have been researched to make lens having high refractive power. And through those researches, the possibility to fabrication of high refractive power lens has been investigated. In this paper, we analyze the effect of many parameters in reflow process to get an aspheric shape with high repeatability. And we make possible to estimate shape error, through we give direct information about decrease in volume of photoresist.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.10a
• /
• pp.104-107
• /
• 2007

An aspheric microlens array to improve the properties of multi optical probes was designed and fabricated. To generate multi optical probes with good qualities, a microlens array with the minimum spherical aberration was designed by ray tracing. Using the reflow process, a master pattern of aspheric microlens array was made and finally with the ultraviolet-imprinting (UV-imprinting) method, the aspheric microlens array was replicated. The reflow condition was optimized to realize the master pattern of the microlens array with the designed aspheric shape. The intensity distribution of the optical probes at the focal plane showed a diffraction-limited shape.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.3
• /
• pp.30-35
• /
• 2020

A microlens has been fabricated by various methods such as a thermal reflow, hot embossing, diamond milling, etc. However, these methods require a relatively complex process to control the microlens shape. In this work, we report on a simple and cost-effective method to fabricate a cylindrical microlens (CML), which can diffuse light widely. We have employed a slot-die head with the dual plate (a meniscus guide with a protruded μ-tip and a shim with a slit channel) for coating of a narrow stripe using poly(methyl methacrylate) (PMMA). We have shown that the higher the coating gap, the lower the maximum coating speed, which causes an increase in the stripe width and thickness. The coated PMMA stripe has the concave shape. To make it in the shape of a convex microlens, we have applied the thermal reflow method. When the stripe thickness is small, however, its effect is negligible. To increase the stripe thickness, we have increased the number of repeated coating. With this scheme, we have fabricated the CML with the width of 223 ㎛ and the thickness of 7.3 ㎛. Finally, we have demonstrated experimentally that the CML can diffuse light widely, a feature demanded for light extraction efficiency of organic light-emitting diodes (OLEDs) and suppression of moiré patterns in displays.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1085-1087
• /
• 1995

A large leakage current may be one of the critical issues for poly-silicon thin film transistors(poly-Si TFTs) for LCD applications. In order to reduce the leakage current of poly-Si TFTs, several offset gated structures have been reported. However, those devices, where the offset length in the source region is not same as that in the drain region, exhibit the asymmetric electrical performances such as the threshold voltage shift and the variation of the subthreshold slope. The different offset length is caused by the additional mask step for the conventional offset structures. Also the self-aligned implantation may not be applicable due to the mis-alignment problem. In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photo resistor reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate from both sides of the main gate. The poly-Si channel layer below the offset oxide is protected from the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of our new device is the offset lesion due to the offset oxide. Our experimental results show that the offset region, due to the photo resistor reflow process, has been successfully obtained in order to fabricate the offset gated poly-Si TFTs. The advantages of the proposed device are that the offset length in the source region is the same as that in the drain region because of the self-aligned implantation and the proposed device does not require any additional mask process step.

• 정보저장시스템학회:학술대회논문집
• /
• 2005.10a
• /
• pp.17-21
• /
• 2005

High-density image sensors have microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using W transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.2
• /
• pp.91-95
• /
• 2006

High-density image sensors rave microlens array to improve photosensitivity. It is conventionally fabricated by reflow process. The reflow process has some weak points. UV imprinting process can be proposed as an alternative process to integrate microlens array on photodiodes. In this study, the UV imprionting process to integrate microlens array on image sensor was developed using UV transparent flexible mold and simulated image sensor substrate. The UV transparent flexible mold was fabricated by replicating master pattern using siliconacrylate photopolymer. The releasing property and shape accuacy of siliconacrylate mold was analysed. After UV imprinting process, replication quality and align accuracy was analysed.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1582-1584
• /
• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

• Journal of Welding and Joining
• /
• v.19 no.3
• /
• pp.305-310
• /
• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.377-380
• /
• 2003

Recently, demand of digital products with optoelectronic device is increasing rapidly. A microlens array is applied to improve optical efficiency on optoelectronic device, and it is usually fabricated by photolithography and reflow process after planarization layer coating process. UV molding process is more suitable for mass production of high quality microlens array than photolithography and reflow process. In the present study, microlens array was fabricated on the simulated optoelectronic device with planarization layer by aligned UV molding process. The shape of replicated microlens was measured, and the section image of molded part was examined.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.1
• /
• pp.47-53
• /
• 2012

Bonding strength of Sn-3.0Ag-0.5Cu solder joint due to degradation characteristic of OSP surface finish was investigated, compared with SnPb finish. The thickness variation and degradation mechanism of organic solderability preservative(OSP) coating were also analyzed with the number of reflow process. To analyze the degradation degree of solder joint strength, FR-4 PCB coated with OSP and SnPb were experienced preheat treatment as a function of reflow number from 1st to 6th pass, respectively. After 2012 chip resistors were soldered with Sn-3.0Ag-0.5Cu on the pre-heated PCB, the shear strength of solder joints was measured. The thickness of OSP increased with increase of the number of reflow pass by thermal degradation during the reflow process. It was also observed that the preservation effect of OSP decreased due to OSP degradation which led Cu pad oxidation. The mean shear strength of solder joints formed on the Cu pads finished with OSP and SnPb were 58.1 N and 62.2 N, respectively, through the pre-heating of 6 times. Although OSP was degraded with reflow process, the feasibility of its application was proven.