• Title/Summary/Keyword: Reflection Spectra

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The Effect of Substrate Temperature on the Electrical, Electronic, Optical Properties and the Local Structure of Transparent Nickel Oxide Thin Films

  • Lee, Kangil;Kim, Beomsik;Kim, Juhwan;Park, Soojeong;Lee, Sunyoung;Denny, Yus Rama;Kang, Hee Jae;Yang, Dong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.397-397
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    • 2013
  • The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

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Photocurrent study on the splitting of the valence band and growth of $Cdln_2Te_4$ single crystal by Bridgman method (Bridgman법에 의한 $Cdln_2Te_4$단결정의 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • 홍광준;이관교;이봉주;박진성;신동찬
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.3
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    • pp.132-138
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    • 2003
  • A stoichiometric mixture for $CdIn_2Te_4$ single crystal was prepared from horizontal electric furnace. The $CdIn_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The $CdIn_2Te_4$ single crystal was evaluated to be tetragonal by the power method. The (001) growth plane of oriented $CdIn_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $CdIn_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61\times 1016 \textrm {cm}^{-3}$ and 242 $\textrm{cm}^2$/V.s at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $1.4750ev - (7.69\times10^{-3})\; ev/k)\;T^2$/(T + 2147k).The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2Te_4$ single crystal have been estimated to be 0.2704 eV and 0.1465 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the $\Gamma_7$ states of the valence band of the $CdIn_2Te_4$ single crystal. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-} B_{1-}$ and Cl-exciton peaks for n = 1.

Energy Band Structure, Electronic and Optical properties of Transparent Conducting Nickel Oxide Thin Films on $SiO_2$/Si substrate

  • Denny, Yus Rama;Lee, Sang-Su;Lee, Kang-Il;Lee, Sun-Young;Kang, Hee-Jae;Heo, Sung;Chung, Jae-Gwan;Lee, Jae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.347-347
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    • 2012
  • Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

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Non-Destructive Prediction of Head Rice Ratios using NIR Spectra of Hulled Rice (정조 상태에서 백미에 대한 완전미율의 비파괴 예측)

  • Kwon, Young-Rip;Cho, Seung-Hyun;Lee, Jae-Heung;Seo, Kyoung-Won;Choi, Dong-Chil
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.53 no.3
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    • pp.244-250
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    • 2008
  • The purpose of this study was to measure fundamental data required for the prediction of milling ratios, and to develop regression models to predict the head rice ratio of milled rice using NIR spectra of hulled rice. A total of 81 rice samples used in this study were collected from Jeongeup, Jeonbuk province in 2006. NIR spectra were measured using one mode of measurement, reflection. The reflectance spectra were measured in the wavelength region of 400-2500 nm with an NIR spectrophotometer "NIRSystems 6500" (Foss, Silverspring, USA). Calibration equations were developed by the modified partial least squares (MPLS), partial least squares (PLS), and principal components regression (PCR). Math treatments were 1-4-4-1, 1-10-10-1, 2-4-4-1, and 2-10-10-1. The software used was WinISI (Infrasoft International, State College, USA). Automatic head rice production and quality checking system used was "SY2000-AHRPQCS" (Ssangyong, Korea). The calibration was made with the first derivative and the spectrum designated was in 8 nm interval. The determination coefficients of head rice ratios were 0.8353, 0.8416 and 0.5277 for the MPLS, PLS and PCR, respectively. Those obtained with 20 nm interval were 0.8144, 0.8354 and 0.6908 for the MPLS, PLS and PCR, respectively. The calibration was made with second derivative that spectrum designated was 8 nm in interval. The determination coefficients of head rice ratios were 0.7994, 0.8017 and 0.4473 for the MPLS, PLS and PCR, respectively. Those with 20 nm interval were 0.8004, 0.8493 and 0.6609 for the MPLS, PLS and PCR, respectively. These results indicate that the accuracy of determination coefficient for MPLS and PLS is higher than that of PCR.

New Methods for Correcting the Atmospheric Effects in Landsat Imagery over Turbid (Case-2) Waters

  • Ahn Yu-Hwan;Shanmugam P.
    • Korean Journal of Remote Sensing
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    • v.20 no.5
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    • pp.289-305
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    • 2004
  • Atmospheric correction of Landsat Visible and Near Infrared imagery (VIS/NIR) over aquatic environment is more demanding than over land because the signal from the water column is small and it carries immense information about biogeochemical variables in the ocean. This paper introduces two methods, a modified dark-pixel substraction technique (path--extraction) and our spectral shape matching method (SSMM), for the correction of the atmospheric effects in the Landsat VIS/NIR imagery in relation to the retrieval of meaningful information about the ocean color, especially from Case-2 waters (Morel and Prieur, 1977) around Korean peninsula. The results of these methods are compared with the classical atmospheric correction approaches based on the 6S radiative transfer model and standard SeaWiFS atmospheric algorithm. The atmospheric correction scheme using 6S radiative transfer code assumes a standard atmosphere with constant aerosol loading and a uniform, Lambertian surface, while the path-extraction assumes that the total radiance (L/sub TOA/) of a pixel of the black ocean (referred by Antoine and Morel, 1999) in a given image is considered as the path signal, which remains constant over, at least, the sub scene of Landsat VIS/NIR imagery. The assumption of SSMM is nearly similar, but it extracts the path signal from the L/sub TOA/ by matching-up the in-situ data of water-leaving radiance, for typical clear and turbid waters, and extrapolate it to be the spatially homogeneous contribution of the scattered signal after complex interaction of light with atmospheric aerosols and Raleigh particles, and direct reflection of light on the sea surface. The overall shape and magnitude of radiance or reflectance spectra of the atmospherically corrected Landsat VIS/NIR imagery by SSMM appears to have good agreement with the in-situ spectra collected for clear and turbid waters, while path-extraction over turbid waters though often reproduces in-situ spectra, but yields significant errors for clear waters due to the invalid assumption of zero water-leaving radiance for the black ocean pixels. Because of the standard atmosphere with constant aerosols and models adopted in 6S radiative transfer code, a large error is possible between the retrieved and in-situ spectra. The efficiency of spectral shape matching has also been explored, using SeaWiFS imagery for turbid waters and compared with that of the standard SeaWiFS atmospheric correction algorithm, which falls in highly turbid waters, due to the assumption that values of water-leaving radiance in the two NIR bands are negligible to enable retrieval of aerosol reflectance in the correction of ocean color imagery. Validation suggests that accurate the retrieval of water-leaving radiance is not feasible with the invalid assumption of the classical algorithms, but is feasible with SSMM.

Study of the Effects of Fe94Si5Cr1-Rubber Absorbers with Sheet-Thickness (Fe94Si5Cr1을 이용한 Sheet 두께에 따른 전파흡수특성 연구)

  • Kim, Moon-Suk;Min, Eui-Hong;Koh, Jae-Gui
    • Journal of the Korean Magnetics Society
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    • v.19 no.2
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    • pp.62-66
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    • 2009
  • The soft magnetic FeSiCr were processed the ball-mill for 30 hours and the shape of FeSiCr particles was changed from sphere to flake type, which was observed using scanning electron microscope. The complex permittivity and permeability spectra and reflection loss of FeSiCr-rubber composite was measured using Network Analyzer in order to investigate the relationship between the microwave absorption and the material constants. The matching frequency shifted toward lower frequency range with microwave absorber thickness, and microwave absorber with FeSiCr-rubber composite showed a maxium reflection loss of -8.3 dB at 1.86 GHz for a 1.3 mm thickness.

Initial oxidation of the alkali metal-adsorbed Si(111) surface (알칼리금속이 흡착된 Si(111)$7\times7$ 계의 초기 산화 과정 연구)

  • 황찬국;안기석;김정선;박래준;이득진;장현덕;박종윤;이순보
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.159-164
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    • 1997
  • We have studied initial oxidation of the alkali metal(AM)/Si(111) surface using X-ray photoelectron spectroscopy(XPS) and reflection high energy electron diffraction(RHEED) at room temperature(RT) and high temperature(HT)(300~50$0^{\circ}C$). The oxidation of the Si(111)7$\times$7 surface was promoted by the adsorption of 1 momolayer(ML) AM, whereas no promotion occurred for submonolayer(<0.5 ML) adsorbed Si(111)7$\times$7 surface at RT. O Is core level spectra were measured with increasing oxygen exposure. It was found that the oxygen adsorbed on the Si(111)7$\times$7-AM surface have two different bond configuration, Si-O and Am-O, respectively. From these results, we discussed the role of AM-O bonding in the promoted oxidation. At HT(300~50$0^{\circ}C$), the AM-adsorbed surface became very inactive with the structural transformation to the 3$\times$1-AM. We present the results of the oxidation of the Si(111)3$\times$1-AM(Na, K, Cs) surface.

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Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

  • Denny, Yus Rama;Firmansyah, Teguh;Park, Chanae;Kang, Hee Jae;Yang, Dong-Seok;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.122.1-122.1
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    • 2015
  • The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

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The Effect of the Oxygen Flow Rate on the Electronic Properties and the Local Structure of Amorphous Tantalum Oxide Thin Films

  • Denny, Yus Rama;Lee, Sunyoung;Lee, Kangil;Kang, Hee Jae;Yang, Dong-Seok;Heo, Sung;Chung, Jae Gwan;Lee, Jae Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.398-398
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    • 2013
  • The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

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Electrical, Electronic Structure and Optical Properties of Undoped and Na-doped NiO Thin Films

  • Denny, Yus Rama;Lee, Kangil;Seo, Soonjoo;Oh, Suhk Kun;Kang, Hee Jae;Yang, Dong-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.193.1-193.1
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    • 2014
  • This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

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