• 전기학회논문지
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• 제60권12호
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• pp.2311-2317
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• 2011

In this paper, we study the temperature change of a ${\mu}$-bolometer focal plane array with a capacitive transimpedance amplifier bias cancellation circuit. Thermal analysis is essential to understand the performance of a ${\mu}$-bolometer focal plane array, and to improve the temperature stability of a focal plane array characteristics. In this study, the thermal analyses of a ${\mu}$-bolometer and its two reference detectors are carried out as a function of time. The analyses are done with the $30{\mu}m$ pitch $320{\times}240$ focal plane array operating of 60 Hz frame rate and having a columnwise readout. From the results, the temperature increase of a ${\mu}$-bolometer in FPA by an incident IR is estimated as $0.689^{\circ}C$, while the temperature increase by a pulsed bias as $7.1^{\circ}C$, which is about 10 times larger than by IR. The temperature increase of a reference detector by a train of bias pulses may be increased much higher than that of an active ${\mu}$-bolometer. The suppression of temperature increase in a reference bolometer can be done by increasing the thermal conductivity of the reference bolometer, in which the selection of thermal conductivity also determines the range of CTIA output voltage.

• 한국정보통신학회논문지
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• 제11권8호
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• pp.1552-1557
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• 2007

본 논문에서는 밴드갭 기준전압을 이용하여 동작온도에 무관한 PWM(Pulse Width Modulation) 제어 회로를 설계 하였다. 동작온도에 무관한 PWM 제어기는 BiCMOS 기술을 이용하여 동작온도에 무관한 기준전압과 동작온도에 따라 변화하는 두개의 기준 전압을 이용하였다. 설계되어진 회로는 공급전압 3.3volt를 사용하였으며, 출력 주파수는 1MHz이다. 회로의 시뮬레이션 결과 동작 온도가 $0^{\circ}C$에서 $70^{\circ}C$까지 변화할 때, PWM 제어기의 출력 펄스폭의 변화는 상온에 비하여 +0.86%에서 -0.38%였다.

• 전자공학회논문지A
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• 제33A권4호
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 한국정보기술학회 영문논문지
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• 제8권2호
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• pp.59-67
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• 2018

The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

• 한국유체기계학회 논문집
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• 제14권1호
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• pp.42-47
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• 2011

Measurement uncertainty analysis of fuel flow using turbine flowmeter was performed for the case of altitude engine test. SAE ARP4990 was used as the fuel flow calculation procedure, as well as the mathematical model for the measurement uncertainty assessment. The assessment was performed using Sensitivity Coefficient Method. 11 parameters involved in the calculation of the flow rate were considered. For the given equipment setup, the measurement uncertainty of fuel flow was assessed in the range of 1.19~1.86 % for high flow rate case, and 1.47~3.31 % for low flow rate case. Fluctuation in frequency signal from the flowmeter had the largest influence on the fuel flow measurement uncertainty for most cases. Fuel temperature measurement had the largest for the case of low temperature and low flow rate. Calibration of K-factor and the interpolation of the calibration data also had large influence, especially for the case of very low temperature. Reference temperature, at which the reference viscosity of the sample fuel was measured, had relatively small contribution, but it became larger when the operating fuel temperature was far from reference temperature. Measurement of reference density had small contribution on the flow rate uncertainty. Fuel pressure and atmospheric pressure measurement had virtually no contribution on the flow rate uncertainty.

• 한국화재소방학회논문지
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• 제27권4호
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• pp.41-46
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• 2013

본 연구는 가구류를 구성하는 주요 재료의 열적조건에 따른 반응특성과 화염전파해석에 필요한 열해리 물성을 제공하기 위해 열중량분석을 수행하였다. 실험대상 시편은 가구류에 널리 적용되는 MDF 판재와 코팅재, 합성피혁과 쿠션재 등이며 가열율 $10^{\circ}C/min$, 최대 온도 $600^{\circ}C$까지 실험을 수행하였다. 실험결과 MDF 소재의 경우 $324^{\circ}C$에서 피크 반응을 나타냈었으며 MDF 코팅재의 경우 초기 피크반응온도가 $270{\sim}280^{\circ}C$로 감소하였다. 합성피혁과 폼 소재의 경우 재료를 구성하는 폴리머의 종류에 따라 기준온도와 기준 반응율이 차이를 보였으나 기준온도는 $270^{\circ}C$와 $420^{\circ}C$ 정도로 비교적 유사한 경향을 나타냈다. Lyon 등이 제시한 방법에 의해 반응상수와 활성화 에너지를 산정하기 위해 시편의 기준 온도와 기준 반응율을 제시하였으며 이러한 기초 물성연구를 통해 화염전파특성을 이해함과 동시에 화재해석의 신뢰성을 향상시키는데 기여하고자 한다.

• 전자공학회논문지C
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• 제34C권8호
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• pp.64-70
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• 1997

This paper presents a parameter optimization method using evolutionary programming in voltage reference circuit because the designer must select appropriate parameter values of the circuit taking into consideration both powr voltage and temperature variation. In this paper, evolutionary programming is suggested as an approach for finding good parameters with which the reference voltage variation is small with respect to temperature variation. Simulation results. Simulation results show that this method is effective in circuit design.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 B
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• pp.403-406
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• 1998

There are two cases of error occurrence of STT(Smart Temperature Transmitter). One is that because of unstable reference voltage, data from A/D converter is not reliable. The other is that because of change of room temperature, this change affects conversion of A/D converter. In this paper, we show algorithms be adapted to STT for reliable conversion of A/D converter through a experiment and compensation for temperature change. In a experiment, we collect data from reference voltage and ground then calculate nominal value of these at constant temperature during A/D converter initialization or at any conversion time. Algorithm for compensation for unstable reference voltage calculates a correction factor and adapts it to compensation for malfunction of A/D converter. Algorithm for compensation for variation of room temperature is come from linearization of thermistor but is adapted to zener diode, not thermistor, therefor we have less effort for compensation for temperature and have a idea that it can be adapted to A/D converter system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1239-1243
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• 2004

A novel voltage-current reference circuit for stable voltage-current applications is Proposed. Circuits for a positive and for a negative voltage-current reference are presented and are designed with commercial CMOS technology. The voltage-current reference that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the HSPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage and output current each is $0.57mV/^{\circ}C$, $0.11{\mu}A/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.89-92
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• 2001

In this paper, a simple low-power CMOS current reference circuit is proposed. The reference circuit includes parasitic pnp BJTs and resistors. Temperature compensation is made by adding a current component proportional to a thermal voltage to a current component proportional to a base-to-emitter voltage. The designed circuit has been simulated using a 0.25${\mu}{\textrm}{m}$ n-well CMOS process parameters. The simulation results show that the reference current is 34.96$mutextrm{A}$$\pm$0.04$mutextrm{A}$ in the temperature range of -2$0^{\circ}C$ to 12$0^{\circ}C$ The reference current varies less than 0.6% when the power supply voltage changes from 2.5V to 3.5V For $V_{DD=5V}$ and T=3$0^{\circ}C$ the power consumption is 520㎼ during normal operation but reduces to 0.l㎻ during power-down mode.