• Applied Chemistry for Engineering
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• v.9 no.1
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• pp.76-81
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• 1998

Physical adsorption on a silica gel(pore size of 80 nm, particle size of $10{\mu}m$)has been studied for binary mixture of acetone diluted in $CO_2$ by use of a FTIR transmission technique and we have compared the result of FTIR transmission technique with that of a chromatographic technique. Measurements were made at 313.2 K and under pressures up to 15MPa. As the pressure increases from 0.1MPa, the IA(Integral Absorbance) of the hydrogen-bonded OH groups interacting with acetone and adsorbed amount by use of a chromatographic technique increases at first, and reaches a maximum at a pressure below the critical pressure of $CO_2$, and then the intensities decrease gradually with increasing pressure. It is found that the pressure dependency of the chromatographic isotherm is a little larger than that of spectroscopic isotherm in the supercritical fluid region. This difference might be attributable to the weaker van der Waals force and relatively stronger hydrogen-bonding force influencing the adsorption of acetone on the sllica gel. The unique spectroscopic characteristics of amine group which vibrational frequencies of hydroxyl groups on the silica gel surface shift downward to about $1300cm^{-1}$ were measured from experimental result of triethylamine diluted in $CO_2$ or $N_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.93-93
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• 1999

양자점(Quantum dot : QD)를 이용한 소자를 만들기 위해서는 수직방향으로의 적층이 필수적이다. 양자점의 적층은 수직적으로 같은 위치에 정렬하므로, 고려되어야 할 요소로는 양자점간의 파동함수의 중첩(coupling)에 의한 특성변화, 적층의 진행에 따른 변형(strain)의 증가로 기인되는 volcano 모양으로 나타나는 결함등이 있다. 이러한 결함은 nonradiative recombination center로 작용하여 오히려 효율이 떨어지게 되는 현상이 발생하게 되므로 본 연구에서는 적층횟수에 따른 발광효율의 변화를 조사하여 소자응용에 적절한 적층 조건을 조사하였다. 시료성장은 molecular beam epitaxy (MBE) 장치를 이용하여 GAs(100) 기판위에 GaAs buffer를 58$0^{\circ}C$에서 150nm 성장후 InAs/GaAs 양자점과 50$0^{\circ}C$에서 적층회수 1, 3, 6, 10, 15, 20회로 하였으며 적층성장 이후 GaAs cap layer를 성장하였다. GaAs spacing과 cap layer의 성장온도 역시 50$0^{\circ}C$이며 시료의 분석은 photoluminescence (PL)과 scanning transmission electron microscope (STEM)으로 하였다. 적층횟수를 바꾸어 시료를 성장하기 전에 적층횟수를 10회로 고정하고 spacing 두께를 2.8nm, 5.6nm, 11.2nm로 바꾸어 성장하여 PL 특성을 관찰하여본 결과 spacing이 2.8nm인 경우 수직적으로 정렬된 양자점 간에 coupling이 매우 커서 single layer QD의 PL peak에 비해 약 100nm 정도 파장이 증가하였고, spacing의 두께가 11.2nm 일 경우는 single layer QD와 거의 같은 파장의 빛을 방출하여 중첩이 거의 일어나지 않지만 두꺼운 spacing때문에 PL세기가 감소하였다. 한편, 적층회수에 따른 광학적 특성을 PL로 조사하여 본 결과 peak 파장은 적층횟수가 1회에서 3회로 증가했을 때는 blue shift 하다가 이후 적층이 증가함에 따라 red shift 하였다. 그리고 10층 이상의 적층에서는 excited state에서 기인된 peak이 검출되었다. 이렇나 원인은 적층수가 증가함에 따라 carrier life time이 증가하여 exciter state에 carrier가 존재할 확률이 증가하기 때문으로 생각된다. 또한 PL 세기가 다소 증가하다가 10층 이상의 경우는 다시 감소함을 알 수 있었다. 반치폭도 3층과 6층에서 가장 적은 값을 보였다. 이와 같은 결과는 결함생성과 관련하여 STEM 분석으로 해석되어질 수 있는데 6층 적층시는 양자점이 수직적으로 정렬되어 잘 형성됨을 관찰할 수 있었고 적층에 따른 크기 변화도 거의 나타나지 않았다. 그러나 10층 15층 적층시 몇가지 결함이 형성됨을 볼수 있었고 양자점의 정렬도 완전하게 이루어지지 않음을 볼 수 있었다. 그러므로 수직적층된 InAs 양자점의 광학적 특성은 성장조건에 따른 결함생성과 밀접한 관련이 있으며 상세한 논의가 이루어질 것이다.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.82-82
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• 2010

We measure the topology of the galaxy distribution using the Seventh Data Release of the Sloan Digital Sky Survey (SDSS DR7), examining the dependence of galaxy clustering topology on galaxy properties. The observational results are used to test galaxy formation models. A volume-limited sample defined by Mr<-20.19 enables us to measure the genus curve with amplitude of G=378 at 6h-1Mpc smoothing scale, with 4.8% uncertainty including all systematics and cosmic variance. The clustering topology over the smoothing length interval from 6 to 10h-1Mpc reveals a mild scale-dependence for the shift and void abundance (A_V) parameters of the genus curve. We find strong bias in the topology of galaxy clustering with respect to the predicted topology of the matter distribution, which is also scale-dependent. The luminosity dependence of galaxy clustering topology discovered by Park et al. (2005) is confirmed: the distribution of relatively brighter galaxies shows a greater prevalence of isolated clusters and more percolated voids. We find that galaxy clustering topology depends also on morphology and color. Even though early (late)-type galaxies show topology similar to that of red (blue) galaxies, the morphology dependence of topology is not identical to the color dependence. In particular, the void abundance parameter A_V depends on morphology more strongly than on color. We test five galaxy assignment schemes applied to cosmological N-body simulations to generate mock galaxies: the Halo-Galaxy one-to-one Correspondence (HGC) model, the Halo Occupation Distribution (HOD) model, and three implementations of Semi-Analytic Models (SAMs). None of the models reproduces all aspects of the observed clustering topology; the deviations vary from one model to another but include statistically significant discrepancies in the abundance of isolated voids or isolated clusters and the amplitude and overall shift of the genus curve. SAM predictions of the topology color-dependence are usually correct in sign but incorrect in magnitude.

• Journal of Life Science
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• v.19 no.1
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• pp.152-155
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• 2009

The old-gold-crimson ($og^c$) fruit color mutation produces deep red tomato fruit with high lycopene content. age is a null mutation allele of lycopene-${\beta}$-cyclase (Crt-b) gene (B locus) that converts lycopene to ${\beta}$-carotene in the cartenoid biosynthesis pathway in tomato. Breeding of high lycopene tomato cultivars can be accelerated by marker-assisted selection (MAS) for introgression of $og^c$ allele by using a gene-based DNA marker. In order to develop a marker, single nucleotide deletion of adenine(A) with. in a poly-A repeat that has been known to be responsible for frame-shift mutation of $og^c$ was confirmed by resequencing mutant allele and wild-type allele at B locus of several tomato lines. For allele discrimination and detection of $og^c$, derived CAPS (dCAPS) approach was used by designing a primer that artificially introduced restriction enzyme recognition site of Hin fI in PCR products from $og^c$ allele. This dCAPS marker is co-dominant gene-based PCR marker that can be efficiently used for MAS breeding program aiming the development of high lycopene tomato.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Korean Journal of Microbiology
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• v.45 no.1
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• pp.63-68
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• 2009

The exo-polysaccharide producing microorganism, Aureobasidium pullulans IMS-822, was isolated and identified from soil. The viscosity-average molecular weight of exo-polysaccharide was calculated as $8.9{\times}10^5$ by Mark-Houwink equation. The sugar component of exo-polysaccharide was determined as glucose by HPLC analysis. The IR spectra indicated that the exo-polysaccharide has an absorption peak at 890 $cm^{-1}$ for the ${\beta}-configuration$ of D-glucan. The $^{13}C$ NMR signal at ${\delta}$ 86.62 ppm arose from the substituted C-3 of glucose. The signal at ${\delta}$ 72.11 ppm was assigned to C-6 of branched ${\beta}-(1{\to}3)-D-glucosyl$ residues. Viscosity and Congo red reaction indicated that {\beta}-(1{\to}3)(1{\to}6)-glucan$ produced by A. pullulans IMS-822 has a highly ordered hydrogen-bond dependent conformation in aqueous solution, which collapses in strong alkaline solution.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.442-448
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• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.483-488
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• 2010

ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.