• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.72-72
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• 2011

Surface science is intrinsically related to the performance of solar cells. In solar cells the generation and collection of charge carriers determines their efficiency. Effective transport of charge carriers across interfaces and minimization of their recombination at surfaces and interfaces is of utmost importance. Thus, the chemistry at the surfaces and interfaces of these devices must be determined, and related to their performance. In this talk we will discuss the role of two important interfaces, First, the role of surface passivation is very important in limiting the rate of carrier of recombination. Here we will combine x-ray photoelectron spectroscopy of the surface of a Si device with electrical measurements to ascertain what factors determine the quality of a solar cell passivation. In addition, the quality of the heterojunction interface in a ZnSe/CdTe solar cell affects the output voltage of this device. X-ray photoelectron spectroscopy gives some insight into the composition of the interface, while ultraviolet photoemission yields the relative energy of the two materials' valence bands at the junction, which controls the open circuit voltage of the solar cell. The relative energies of ZnSe and CdTe at the interface is directly affected by the material quality of the interface through processing.

• Journal of Information Display
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• v.8 no.3
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• pp.11-16
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• 2007

Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.284-284
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• 2010

Currently, hydrogen has been produced by Steam Reforming or partial oxidation reforming processes mainly from oil, coal, and natural gas and results in the production of $CO_2$. However, these are influenced greatly on the green house effect of the earth. so it is important to find the new way to produce hydrogen utilizing water without producing any environmentally harmful by-products. In our research, we use microwave water plasma and photocatalyst to improve dissociation rate of water. At low pressure plasma, electron have high energy but density is low, so temperature of reactor is low. This may cause of recombination in the generated hydrogen and oxygen from splitting water. If it want to high dissociation rate of water, it is necessary to control of recombination of the hydrogen and oxygen using photocatalyst. We utilize the photocatalytic material($TiO_2$, ZnO) coated plasma reactor to use UV in the plasma. The quantity of hydrogen generated was measured by a Residual Gas Analyzer.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1995.05a
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• pp.45-52
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• 1995

The photocatalytic activity of TiO$_2$ was investigated as a function of added amount of Nb$_2$O$_{5}$, heat treatment temperature and the decomposition rate of 1 mM dichloroacetic acid(DCA). Mixed oxides of TiO$_2$ and Nb$_2$O$_{5}$ was prepared by the sol-gel process. The addition of Nb$_2$O$_{5}$ into TiO$_2$ has deleterious effect on the decomposition rate of DCA, which was decreased as the amount of Nb$_2$O$_{5}$ was increased. The excess electrons due to the doping of Nb$_2$O$_{5}$ into TiO$_2$ can promote the reduction process instead of oxidation or recombination rate with electron holes. The most efficient photocatalyst was the one heat treated at 40$0^{\circ}C$ for an hour as far as the heat treatment temperature is concerned. The lower the pH of the solution, the higher the quantum yield.tum yield.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.96-101
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• 2015

Quantitative evaluation of photocatalytic activity of oxide nanoparticles in aqueous solution is quite challenging in that the kinetic reaction rate is determined by a complicated interplay among various limiting factors such as light scattering and absorption, diffusion and adsorption of reactants in condensed liquid phase, photoexcited charge separation and recombination rate, and the exact nature of active sites determined by detailed morphology and crystallinity of nanocrystals. Here, we present our simple experimental results showing that the kinetic regime of a typical photocatalytic degradation experiment over UV-irradiated $TiO_2$ nanoparticles in aqueous solution is in that dominated by the photoactivity of $TiO_2$ and its concentration. This result lays a firm ground of using the measured kinetic reaction rate in evaluating photocatalytic efficiency of oxide nanocrystals under evaluation.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.28-31
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• 2003

We have investigated the electrical characteristics of the organic light emitting diodes (OLEDs) using the numerical device simulation. The current-voltage characteristics, the charge carrier concentrations, and the recombination rate profiles are presented. The simulation results of the effects of the various device parameters on the device characteristics are discussed.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.05a
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• pp.909-910
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• 2005

• Journal of Industrial Technology
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• v.1
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• pp.47-51
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• 1981

A Kinetic model of desorption of hydrogen in $Dy_2Co_7-H$ system has been suggested and rate equation of each step of the model has been compared with experimental results. The reat controlling step was hydrogen recombination in metal surface. The activation energy of over-all reaction was about 23kcal/mole.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.803-805
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• 1992

The InP single crystals were grown by Modified Synthesis Solute Diffusion (SSD) method and its properties were investigated. The crystal growth rate and lattice constant $a_{\circ}$ of the grown crystals were 1.8mm/day, 5.867${\AA}$ respectively. Etch pits density along growth direction of crystal had nearly uniformity' about (2-6)x10 $cm^{-2}$ from first freeze part to last freeze part. The carrier concentration, mobility and resistivity varied from 6.25 x $10^{15}cm^{-3}$, 4218 $cm^{2}$/V sec and 1.38 x $10^{-1}{\Omega}^{-cm}$ at the first freeze part to 8.8x$10^{-3}cm^{-3}$, 4012 $cm^{2}$/V.sec and 1.43 X $10^{-1}{\Omega}^{-cm}$ at the last freeze part. In the photoluminescence at 10K, the radiation transitions were observed by the near band edge recombination, D-A pair recombination and its phonon replica in the undoped InP.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.10
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.