• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.3 no.1
• /
• pp.18-25
• /
• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Korean Chemical Society
• /
• v.20 no.3
• /
• pp.193-197
• /
• 1976

The ultrasonic absorption has been measured in aqueous solution of dodecyl pyridinium chloride (DPC) at $20^{\circ}C$ over the frequency range of 0.1${\sim}$90 Mc.The excess absorption was observed only in solutions in which the concentration was higher than the critical micellar concentration(cmc). The mechanism for this feature was attributed to the reaction $M_2\;{\rightleftharpoons}\;M_1\;＋\;1.2Cl^-$ Where $M_2$ and $M_1$ and M1 are two types of micelle. The rate constants of the forward and the reverse reactions were $6.6{\times}10^5 sec^{-1}\;and\;2.7{\times}10^11sec^{-1}mol^{-1.2}$respectively. Some kinetic charateristics including the free energy, enthalpy and entropy were calculated.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.4
• /
• pp.207-212
• /
• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Environmental Mutagens and Carcinogens
• /
• v.19 no.1
• /
• pp.7-13
• /
• 1999

The mouse lymphoma thymidine kinase (tk+/-) gene assay (MOLY) using L5178Y tk+/- mouse lymphoma cell line is one of the mammalian forward mutation assays. It is well known that MOLY has many advantages and more sensitive than the other mammalian forward mutation assays such as x-linked hyposanthine phosphoribosyltransferase (hprt) gene assay. The target gene of MOLY is a heterozygous tk+/- gene located in 11 chromosome of L5178Y tk+/- cell, so it is able to detect the wide range of genetic changes like point mutation, deletion, rearrangement, and mitotic recombination within tk gene or deletion of entire chromosome 11. MOLY has relatively short expression time (2-3 days) compared to 1 week of hprt gene assay. MOLY can also induce relatively high mutant frequency so a large number of events can be recorded. The bimodal distribution of colony size which may indicate gene mutation and chromosome breakage potential of chemicals according to mutation scale such as large normal-growing mutants and small slow-growing mutants can be observed in this assay. The statistical analysis of data can be performed using the MUTANT program developed by York Electronic Research in association with Hazelton as recommended by the UKEMS (United Kingdom Environmental Mutagen Society) guidelines. This report reviewed MOLY using the microtiter cloning technique (microwell assay).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.67-70
• /
• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE). The GaN substrates, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 10${\times}$10 $\textrm{mm}^2$ area, were obtained by HVPE growth GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of c$\_$0/=5.18486 ${\AA}$ and a FWHM of DCXRD was 650 arcsec for the single crystalline freestanding GaN substrate. The low temperature PL spectrum consist of excitonic emission and deep donor to acceptor pair recombination at 1.8 eV. The Raman E$_2$ (high) mode frequency was 567 cm$\^$-1/ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283 $\textrm{cm}^2$/V$.$sec and 1.1${\times}$10$\^$18/ cm$\^$-3/, respectively. The freestanding and crack-free GaN single crystalline substrate suitable for the homoepitaxial growth of GaN, and the HVPE method are promising approaches for the preparation of large area, crack-free GaN substrates.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.37 no.1
• /
• pp.27-34
• /
• 2000

In this paper, carrier transport mechanism and modulation response for SCH(Separate Confinement Heterostructure) SQW(Single Quantum Well) laser diodes were studied. In order to explain carrier transport mechanism, both carrier density and current density were calculated. The recombination current density in the quantum well as a function of the SCH length was also calculated. For the modulation response, linearizing the rate equation, we calculated the bandwidth, relaxation oscillation frequency, damping factor, and the K-factor.

• Korean Journal of Breeding Science
• /
• v.41 no.1
• /
• pp.9-15
• /
• 2009

Recently, giant embryonic rice and functional rice food are preferred by more consumers, which are attributed to the fact that the embryo has high concentrations of essential amino acids, fatty acids, and vitamins relative to other parts of rice grains. In this report, the heredity and stability of giant embryo mutations in successive generations were analyzed regarding a giant embryonic line, 'P47', induced by T-DNA insertion and a $F_2$ population from a cross between 'P47' and 'Junam'. The mutant lines with increases of 1.5, 1.7 and 1.8 times on embryo length, width and 100-embryo weight to those of the control showed stable inheritance across three generations. The continuous frequency distributions of embryo size in the $F_2$ population showed that the embryo size is a quantitative trait of polygene controlled. In addition, wide range of transgressive segregations of six traits affecting embryo size confirmed exchange of genetic materials and recombination between genes controlling embryo size. Five giant embryo mutant lines selected from the $F_2$ population will be used for artificial selection and improvement of giant embryonic varieties.

• Journal of the Korean Ceramic Society
• /
• v.55 no.3
• /
• pp.244-260
• /
• 2018

Issues in the electrical characterization of semiconducting photoanodes in a photoelectrochemical (PEC) cell, such as the cell geometry dependence, scan rate dependence in DC measurements, and the frequency dependence in AC measurements, are addressed, using the example of a $TiO_2$ photoanode. Contrary to conventional constant phase element (CPE) modeling, the capacitive behavior associated with Mott-Schottky (MS) response was successfully modeled by a Havriliak-Negami (HN) capacitance function-which allowed the determination of frequency-independent Schottky capacitance parameters to be explained by a trapping mechanism. Additional polarization can be successfully described by the parallel connection of a Bisquert transmission line (TL) model for the diffusion-recombination process in the nanostructured $TiO_2$ electrode. Instead of shunt CPEs generally employed for the non-ideal TL feature, TL models with ideal shunt capacitors can describe the experimental data in the presence of an infinite-length Warburg element as internal interfacial impedance - a characteristic suggested to be a generic feature of many electrochemical cells. Fully parametrized impedance spectra finally allow in-depth physicochemical interpretations.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.1
• /
• pp.59-65
• /
• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• IMMUNE NETWORK
• /
• v.2 no.4
• /
• pp.248-255
• /
• 2002

Background: TAP1 and TAP2 are two ABC transporter genes located within the class II region of the human MHC. Their protein products form a heterodimer whose function is to transport peptides from the cytoplasm into the endoplasmic reticulum. This study was performed to examine the polymorphism of TAP genes and the distribution of HLA-TAP haplotypes in the Korean population through family analysis. Methods: The subjects used in this study were 50 healthy Korean families consisting of 233 individuals. TAP1 (codons 333 and 637) and TAP2 (codons 379, 565, 577, 651, 665, and 687) typings were carried out by the PCR-restriction fragment length polymorphism (RFLP) method. HLA-DRB1 and DQB1 genotyping results from a previous study were used for HLA-TAP haplotype analysis. Results: The number (gene frequency) of TAP1 and TAP2 alleles detected were 3 for TAP1 (A 81.5%, B 17.0%, and C 1.5%) and 8 for TAP2 (A1 32.0%, A2 12.5%, B 34.0%, Bky2 6.5%, C 7.0%, D 3.0%, E 4.5%, and G 0.5%). Eleven TAP1-TAP2 haplotypes were observed with $frequency{\geq}1%$, among which 4 haplotypes (A-B, B-A1, A-Bky2, and C-E) showed weak but significant positive linkage disequilibrium (P<0.05). When DRB1-DQB1 haplotypes were extended to TAP1 and TAP2 loci, much diversification of haplotypes was observed: 19 different DRB1-DQB1 haplotypes formed 58 different haplotypes extended to TAP1 and TAP2 loci. These results add more evidence to the view that recombination hotspot is present within and around TAP gene region. Conclusion: The allele frequencies of TAP1 and TAP2 genes and the distribution of TAP1-TAP2 and HLA-TAP haplotypes were studied in Koreans based on a family study.