• Title/Summary/Keyword: Reactive surface

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Post etch process using CO/NH3 and Reactive Ion Beam for STT-MRAM device

  • Park, Seong-U;Yang, Gyeong-Chae;Jeon, Min-Hwan
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.05a
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    • pp.38-38
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    • 2015
  • 차세대 메모리로 각광받고 있는 STT-MRAM의 동작특성을 향상시키기 위하여 식각 시 재 증착되는 식각 부산물을 저 손상을 제거하였다.

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Preparation and Properties of RuO$_{2}$ Thin Films by Using the RF Magnetron Reactive Sputtering (RF Magnetron Reactive Sputtering 법을 이용한 RuO$_{2}$ 박막의 제작과 특성에 관한 연구)

  • 강성준;장동훈;윤영섭;김동일
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.8
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    • pp.8-14
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    • 1997
  • RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

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A portable surface plasmon resonance sensor system for detection of C-reactive protein using SAM with dimer structure (소형 표면 플라즈몬 공명 센서와 이합체 구조를 가진 SAM을 이용한 CRP 검출)

  • Sin, Eun-Jung;Joung, Eun-Jung;Jo, Jin-Hee;Hwang, Dong-Hwan;Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.19 no.6
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    • pp.456-461
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    • 2010
  • The detection of C-reactive protein(CRP) using self-assembled monolayer(SAM) was investigated by a portable surface plasmon resonance(SPR) sensor system. The CRP is a biomarker for the possible cardiovascular disease. The SAM was formed on gold(Au) surface to anchor the monoclonal antibody of CRP(anti-CRP) for detection of CRP. Sequence injection of the anti-CRP and bovine serum albumin(BSA) into the sensor system has been carried out immobilize the antibody and to prevent non-specific binding. The portable SPR system has two flow channels: one for the sample measurements and the other for the reference. The output SPR signal was increased with the injection of the anti-CRP, BSA and CRP due to binding of the proteins on the sensor chip. The valid output SPR signals was linearly related to the critical range of the CRP concentration. The experimental results showed the feasibility of the portable SPR system with newly developed SAM to diagnose a risk of the future cardiovascular events.

Multi-crystalline Silicon Solar Cell with Reactive Ion Etching Texturization

  • Park, Seok Gi;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.419-419
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    • 2016
  • High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

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Study on PVA mode using the UV curable reactive mesogen (RM) (광경화성 단분자를 이용한 PVA모드의 8-도메인 형성방안 연구)

  • Kim, Woo-Il;Kim, Sung-Min;Cho, In-Young;Kim, Mi-Young;Son, Jong-Ho;Ryu, Jae-Jin;Kim, Kyeong-Hyeon;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.339-340
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    • 2008
  • The Conventional PVA (patterned vertical alignment) mode showed characteristics of 8-domain using T-T type or C-C type. But these methods have disadvantages such as decreasing aspect ratio and transmittance. In order to resolve these problems, in this paper we have studied a new 8-domain method which is partially using the UV curable reactive mesogen (RM) that is a role in surface stabilization. The characteristic of off-axis color shift is decreased because the part of surface stabilized area is compensated to other area in a pixel. Consequently, the device shows improved color shift by 8-domain.

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