• Journal of Korean Society of Environmental Engineers
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• v.27 no.1
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• pp.59-66
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• 2005

[ $TiO_2$ ] was deposited by DC magnetron sputtering on glass surface under various sputtering parameters such as discharge power($0.6{\sim}5.2\;kW$, substrate temperature($R.T{\sim}350^{\circ}C$), Ar and $O_2$ flow ratio with $0{\sim}50\;sccm$($Ar+O_2$ 90 sccm) and about 1 mtorr of pressure. TiO-N thin film was prepared under same sputtering conditions for $TiO_2$ thin film except flow ratio($Ar+O_2+N_2$ 90 sccm). The sheet resistance of thin films deposited under these parameters was measured to analyze electronic characteristic and thin film's thickness(${\alpha}$-step), surface roughness(AFM) and formation construction(FE-SEM, XRD) were also measured to draw optimal sputtering parameters. In order to evaluate photo-activity of thin film($TiO_2$, TiO-N) made in optimal parameters for removal of pollutants, toluene among VOCs and Suncion Yellow among reactive dyes were chosen to probe organic compounds for photo-degradation. It was shown that the photo-catalytic thin films had a significant photo-activation for the chosen contaminants and especially TiO-N thin film showed maximum efficiency of 33% for toluene(5 ppm) removal in visible-light range.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Journal of Soil and Groundwater Environment
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• v.14 no.1
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• pp.44-50
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• 2009

The occurrence of endocrine disrupting compounds (EDCs), chemicals that interfere with human hormone system, are increasing in the freshwater, waste water and subsurface as well. In this study, we determined the reactivity of three EDCs in the presence of birnessite. In aqueous phase, bisphenol A, 2,4-dichlorophenol and 17${\beta}$-estradiol, which possesses phenoxy-OH, were very rapidly transformed by birnessite: up to 99% of initial concentrations (50 mg/L for bisphenol A, 100mg/L for 2,4-dichlorophenol, and 1.5mg/L for 17${\beta}$-estradiol) were destroyed within 60 minutes. Especially, bisphenol A was the most reactive chemical, disappearing by 99% in a few minutes. The reaction occurred on the surface of birnessite, showing a linear increase of first-order kinetic constants with the increase of the surface area of birnessite. In soil slurry phase, the reactivity of birnessiteto EDCs was faster than in aqueous phase probably due to the cross coupling reaction of phenoxy radicals with soil organic matter. Considering the rapid transformation of the EDCs in the both phases, this oxidative cross coupling reaction mediated by birnessite would be an effective solution for the remediation of EDCs in environmental media, especially in soil.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.634-640
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• 1998

A well- shaped trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy. The trench was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $0_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching, resulted in the well filled trench with oxide and polysilicon by subsequent deposition. The passivation layer of lateral etching was mainly composed of $SiO_xF_y$ $SiO_xBr_y$ confirmed by chemical analysis. It also affects the generation and distribution of lattice defects. Most of etch induced defects were found in the edge region of the trench bottom within the depth of 10$\AA$. They are generally decreased with the thickness of residue layer and almost disappeared below the uni¬formly thick residue layer. While the formation of crystalline defects in silicon substrate mainly depends on the incident angle and energy of etch species, the region of surface defects on the thickness of residue layer formed during trench etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Food Science of Animal Resources
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• v.31 no.4
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• pp.588-595
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• 2011

In this study, the effects of red ginseng extracts (RGE), which has been used as an antioxidant and antimicrobial agent, on pork sausage were evaluated. The treatments were as follows; addition of 0.01% sodium ascorbate (V), 0.5% RGE (T1), 1.0% RGE (T2) and 1.5% RGE (T3) to the basal formula (C). T3 had a significantly higher pH, cooking loss and yellowness ($CIEb^*$) and lower lightness (CIE $L^*$) and redness (CIE $a^*$) than the other samples. The hardness and surface hardness values of 1.5% RGE treated sample were significantly lower (p<0.01) than those of C. However, the cohesiveness values of the RGE samples were higher than the others (p<0.05). In the sensory evaluation, no significant differences in color, taste, texture, juiciness and acceptability were observed among the tested samples, while, the aroma scores of T2 and T3 were higher than those of the C and V samples (p<0.05). The TBARS values of RGE treated groups were higher (p<0.05) than the C sample after 1, 2 and 3 weeks of storage; however, this value did not increase with storage time (p>0.05). When the RGE concentration was high, the reduction in total plate counts and VBN value at week 3 and 4 of storage (p<0.01) decreased. In conclusion, red ginseng extracts seemed to have a positive impact on lipid oxidation, aroma and the microbial characteristics of pork sausage.

• Parasites, Hosts and Diseases
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• v.36 no.4
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• pp.269-275
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• 1998

Anti-Neospora caninum antibody was detected in anti-Toxoplasma gondii positive and negative human sera by ELISA, western blot and immunofluorescence assay (IFA). Twelve cases out of 172 (6.7％) Toxoplasma-positive sera cross-reacted with both T. gondii and N. caninum antigens, and one out of 110 Toxoplasma-negative sera reacted with N. caninum antigen by ELISA. By western blot, all 12 sera reacted with T. gondii antigens with various banding patterns but specifically at 30 kDa (SAG 1), and 22 kDa （SAG2) bands. With N. caninum antigen, the number of reactive bands was reduced, however a 43 kDa band reacted in three cases in Toxoplasma-positive sera in addition to one in Toxoplasma-negative control sera. All sera of the Toxoplasma-positive group labeled surface membrane of T. gondii, but reacted differently with N. caninum. Fluorescence was detected in surface membrane, subcellular organelles, or both in N. caninum. And one case in the Toxoplasma-negative group also reacted with N. caninum strongly in subcellular organelles. This suggested that the antibody against N. caninum may be present in human sera although the positive rate was very low in this study. The possibility of human infection with N. caninum remains to be evaluated further.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Parasites, Hosts and Diseases
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• v.30 no.1
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• pp.33-42
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• 1992

Naegleria fowleri, a free-living amoeba commonly found in moist soil and fresh water, enters the body via the nasal mucosa and migrates along the olfactory nerve to t he brain, where it causes acute amoebic meningoencephalitis. In the present study 7 clones secreting monoclonal antibodies (McAbs) against N. fowleri were produced and the effector function of them was investigated. Their isotopes were IgGl (Nf 1, Nf 154), 19G3 (Nf 137) and 19A (Nf 1, Nf 2, Nf 256, Nf 279). Five McAbs (McAb Nf 2, Nf 279, Nf 27, Nf 154, Nf 137) were specific for N. fowleri by ELISA and recognized the antigenic determinants located on the trophoBoite surface by IFAT and immunoperoxidase stain. These aye McAbs had capacity to agglutinate N. fowleri trophozoites and inhibited the growth of the amoeba in culture medium. McAb Nf 2 inhibited proliferation of trophozoites in vitro significantly. Also the cytotoxicity of JV. fowleri against CHO cell was reduced in the presence of McAb Nf 2 and McAb Nf 154. From these results McAb Nf 2 was confirmed to weaken the virulence of the amoeba among 7 screened McAbs.