• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2009.05a
• /
• pp.130-131
• /
• 2009

AIP(arc ion plating)방법과 마그네슘 스퍼터링(DC reactive magnetron sputtering) 방법을 결합시킨 하이브리드 코팅 시스템으로 Cr-Si-N 코팅막을 합성하였다. 고분해능 TEM 및 SEM 분석들로부터 negative bias voltage에 따른 미세구조의 영향을 나타내었다. negative bias voltage의 증가에 따라 columnar microstructure가 amorphous microstructure로 변화하였다. bias voltage effect에 의해 Cr-Si-N 코팅막내 입자의 크기가 미세해지고 나노 복합체를 잘 형성하였다.

• Journal of Energy Engineering
• /
• v.4 no.2
• /
• pp.297-302
• /
• 1995

Ignition of a reactive solid in a shape of square corner by a hot surface is studied theoretically. Ignition time and the location of ignition point are determined as a function of dimensionless parameters, with the use of the homogeneous model of ignition. The effect of geometry on the ignition of solid fuel results in the local characteristics: the reaction is initiated in a hot point in depth of the substance. It is shown that ignition time is proportional to the dimensionless initial temperature, whereas for the ignition of the semiinfinite body this dependence was quadratic.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.115-116
• /
• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.15-15
• /
• 2014

Block Copolymer(BCP) 는 self assembly 현상을 이용하여 다양한 pattern을 형성하는데 용이한 물질로써 이를 이용한 다양한 구조물 제작에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 hoe pattern 모양을 갖는 BCP 패턴을 이용하여 Atomic Layer Deposition(ALD) 및 Reactive Ion Etching(RIE) 공정을 이용한 3차원 quantum tube 구조물을 제작하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.11a
• /
• pp.107-107
• /
• 2012

연료전지 분리판용 모재로서 사용되고 있는 스테인레스 스틸에 대해서는 많은 연구가 진행되어 왔으나, 알루미늄은 거의 연구가 진행되지 않고 있다. 따라서 이번 연구는 DC 반응성 마그네트론 스퍼터링법으로 알루미늄 기판 위에 TiN, TiCN 박막을 반응성 가스 유량별로 증착하여, 기계적 특성 및 내부식성 특성을 비교 검토하였다.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.95-96
• /
• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• Proceedings of the Korean Society of Coastal and Ocean Engineers Conference
• /
• 1992.08a
• /
• pp.69-71
• /
• 1992

The local horizintal flux of tidal energy is characterized by the surface density $\omega$ = $\rho$ g h ζ u ($\rho$ - sea water density, g - gravitation, h - depth, ζ - tidal surface elevation, u - vertically averaged tidal current velocity vector). In general the flux vector $\omega$ comprises active and reactive components whose relation determines the local structure of a tidal wave.(omitted)

• Journal of the Korean Vacuum Society
• /
• v.16 no.1
• /
• pp.15-22
• /
• 2007

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110< ridges and {111} facets, as it does in purely chemical etching. The morphology develops in less than 1 minute and grows bigger over time. The etched surfaces show different morphologies at different source powers with constant pressures of gases. Lowe. source power (100 W) produces poorly developed crystallographic surfaces while higher source power (900 W) produces well developed crystallographic surfaces. This is attributed to the availability of excited reactive species(chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one(smaller than one) is formed by atomic scale mechanisms, the other(larger than one) is formed by larger scale mechanisms which is believed to develop facets.

• Journal of the Korean Vacuum Society
• /
• v.16 no.4
• /
• pp.250-261
• /
• 2007

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110> ridges and {111} facets, as it does in purely chemical etching. Higher source power (900 W) produces well developed crystallographic surfaces while lower source power (100 W) produces poorly developed crystallographic surfaces. This is attributed to the availability of excited reactive species (chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one (smaller than one) is formed by atomic scale mechanisms, the other (larger than one) is formed by larger scale mechanisms which is believed to develop facets. When samples are biased, the surfaces experienced bombardment resulting in suppression of ridge formation at high source power and islands formation at low source power.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.114-120
• /
• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.