• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.328-331
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• 2012

With the recent development of super-precision optical instruments, camera modules for devices, such as portable terminals and digital camera lenses, are increasingly being used. Since an optical lens is usually produced by high-temperature compression molding methods using tungsten carbide (WC) alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coatings for the core surface. In this study, Rhenium-Iridium (Re-Ir) thin films were deposited onto a WC molding core using a sputtering system. The Re-Ir thin films were prepared by a multi-target sputtering technique, using iridium, rhenium, and chromium as the sources. Argon and nitrogen were introduced through an inlet into the chamber to be the plasma and reactive gases. The Re-Ir thin films were prepared with targets having a composition ratio of 30 : 70, and the Re-Ir thin films were formed with a 240 nm thickness. Re-Ir thin films on WC molding core were analyzed by scanning electron microscope (SEM), atomic force microscope (AFM), and Ra (the arithmetical average surface roughness). Also, adhesion strength and coefficient friction of Re-Ir thin films were examined. The Re-Ir coating technique has received intensive attention in the coating processes field because of promising features, such as hardness, high elasticity, abrasion resistance and mechanical stability that result from the process. Re-Ir coating technique has also been applied widely in industrial and biomedical applications. In this study, WC molding core was manufactured, using high-performance precision machining and the effects of the Re-Ir coating on the surface roughness.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.103-107
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• 2023

To solve the reliability problem of organic devices that are often used outdoors, multifunctional gas barriers that block reactive gases such as moisture and oxygen and reflect harmful light such as ultraviolet rays are needed. In this study, ALD nanolaminate-based optically functional n-DBR was developed to overcome the poor gas permeability of polymer substrates and protect organic devices from harmful light. n-DBR not only achieved a WVTR of 8.76 × 10^-6 g·m^-2·day^-1, but also showed a visible light transmittance of 94.3% and an ultraviolet ray blocking ability of 2.67%. In particular, n-DBR based on a nanolaminate structure maintained its permeability characteristics even in a high temperature and high humidity environment despite being used as a layer of Al₂O₃. This functional barrier Structure can not only be used as a functional encapsulation barrier for the reliability of organic devices, but can also be used as a tinting film for vehicles.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.364-371
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• 1997

Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-$O_2$, $CF_4$. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-$O_2$, $SiF_4$ additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-$O_2/SiF_4$ plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-$O-2/CF_4$plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-$O_2$ or $SiF_4$ additive gases instead of $CF_4$ gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Clean Technology
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• v.20 no.3
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• pp.218-225
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• 2014

Catalytic gasification of raw coals at mild condition is not realized yet mainly due to deactivation of catalysts via their irreversible interaction with mineral matters in coal. In this work, the gasification behavior of ash-free coal (AFC) was compared with that of the parent raw coal. In order to modify the gasification conditions, the raw coal gasified with fixed variables (water supply, space velocity, temperature, catalysts) in a fixed bed reactor. When catalysts are added by physical mixing method with coal, $K_2CO_3$ was the most effective additives for steam gasification of coal. However, the activity of ash-free coal (AFC) was much less reactive than raw coal due to high temperature extraction in a 1-methylnaphthalene under 30bar at $370^{\circ}C$ for 1 h, almost removed oxygen functional groups, and increased carbonization. The addition of $K_2CO_3$ in AFC achieved higher conversion rate at low temperature ($700^{\circ}C$). At that time, the molar ratio of gases ($H_2/CO$ and $CO_2/CO$) was increased because of water-gas shift reaction (WGSR) by addition of catalysts. This shows that catalytic steam gasification of AFCs is achievable for economic improvement of gasification process at mild temperature.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.200-205
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• 1997

Surface of polyethylene film was modified by ion assisted reaction in which ion beam is irradiated on polymer in reactive gas environments. Ion (argon and oxygen) beam energy was 1 keV, doses were varied from $1{\times}10^{14}$ to $1{\times}10^{17}$ inons/ $\textrm{cm}^2$, and amount of blowing oxygen from 0 to 4 sccm(ml/min). Wettability was measured by water contact angle measurement, and the surface functionality was analyzed by x-ray photoelectron spectroscopy. The contact angles of water to polyethylene modified by oxygen ion beam only decrease from 95 to degrees, and surface energy was not changed much. The contact angles remarkably decrease to 28 degrees and surface energy increase to 67 erg/ $\textrm{cm}^2$ when the films were modified by argon ion with various ion doses with blowing oxygen gases near the polyethylene surface. Improvement of wettability and surface energy are mainly due to the new functional group formation such as C-O or C=O, which are known as hydrophilic groups from the XPS analysis, and the assisted reaction is very effective to attach oxygen atoms to form functional groups on C-C bond chains of polyethylene.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.577-582
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• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.

• KSBB Journal
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• v.30 no.1
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• pp.21-26
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• 2015

Plasma is an ionized gas mixture, consisting of neutral particles, positive ions, negative electrons, electronically excited atoms and molecules, radicals, UV photons, and various reactive species. Also, plasma has unique physical properties distinct from gases, liquids, and solids. Until now, non-thermal plasmas have been widely utilized in bio-medical applications (called bio-plasma) and have been developed for the plasma-related devices that are used in the medical field. Although numerous bio-plasma studies have been performed in biomedicine, there is no confirmation of the nonthermal effect induced by bio-plasma. Standardization of the biological application of plasma has not been evaluated at the molecular level in living cells. In this context, we investigated the biological effect of bio-plasma on living cells. Hence, we treated the fibroblasts with Dielectric Bauvier Discharge bio-plasma (DBD), and assessed the characteristic change at the molecular level, one of the typical cellular responses. Heat shock protein 70 (HSP70) regulates its own protein level in response to stimuli. HSP70 responds to heat shock by increasing its own expression at the molecular level in cells. Hence, we confirmed the level of HSP70 after treatment of mouse embryonic fibroblasts (MEFs) with DBD. Interestingly, DBD-plasma induced cell death, but there was no difference in the level of HSP70, which is induced by heat shock stimuli, in DBD-treated MEFs. Our data provide the basic information on the interaction between MEFs and DBD, and can help to design a molecular approach in this field.

• Journal of the Korea Society for Simulation
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• v.28 no.2
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• pp.1-14
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• 2019

A full scale hydrodynamic simulation that requires an accurate reproduction of shock-induced detonation was conducted for design of an energetic component system. A detailed hydrodynamic analysis SW was developed to validate the reactive flow model for predicting the shock propagation in a train configuration and to quantify the shock sensitivity of the energetic materials. The pyrotechnic device is composed of four main components, namely a donor unit (HNS+HMX), a bulkhead (STS), an acceptor explosive (RDX), and a propellant (BPN) for gas generation. The pressurized gases generated from the burning propellant were purged into a 10 cc release chamber for study of the inherent oscillatory flow induced by the interferences between shock and rarefaction waves. The pressure fluctuations measured from experiment and calculation were investigated to further validate the peculiar peak at specific characteristic frequency (${\omega}_c=8.3kHz$). In this paper, a step-by-step numerical description of detonation of high explosive components, deflagration of propellant component, and deformation of metal component is given in order to facilitate the proper implementation of the outlined formulation into a shock physics code for a full scale hydrodynamic simulation of the energetic component system.