• 반도체디스플레이기술학회지
• /
• 제18권1호
• /
• pp.1-4
• /
• 2019

Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
• /
• pp.67-67
• /
• 1999

• 대한금속재료학회지
• /
• 제47권6호
• /
• pp.378-382
• /
• 2009

We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

• 한국재료학회지
• /
• 제9권7호
• /
• pp.688-694
• /
• 1999

Ti-6Al-4V 합금을 타겟트로 사용하여 유리 기판위에 dc reactive magnetron sputtering법으로 $N_2$/(Ar+N_2)$ 비, 기전력 및 시간등의 여러 가지 증착 조건에서 Ti-6Al-4V-N 필름을 증착하였고, 각각의 증착 조건에 따른 결정구조 및 우선방위 거동은 X-선 회절장치를 사용하여 조사하였다. Ti-6Al-4V-N 필름은 본질적으로 fcc 결정구조의 $\delta$-TiN에 Al과 V이 결함으로서 고용된 변형된 형태의 $\delta$-TiN구조이고, TiN의 격자상수(4.240 )보다 작은 값을 나타내었는데, 이는 Ti(1.47 )에 비하여 상대적으로 원자반경이 작은 Al(1.43 )과 V (1.32 )이 Ti의 격자위치에 치환된 결과이다. 그리고 Ti-6Al-4V-N 필름은 $_N2$가스 분압이 감소됨에 따라 (111) 우선방위 성장거동을 하였을 뿐만아니라 증착시간의 증가에 따라 뚜렷한 (111) 우선방위 성장거동을 나타내었다. 그리고 증착속도 및 결정입도의 거동 또한 여러 가지 증착 조건에 크게 의존한다

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.52-53
• /
• 2005

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

• 한국표면공학회지
• /
• 제40권3호
• /
• pp.117-124
• /
• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• 한국초전도ㆍ저온공학회논문지
• /
• 제6권3호
• /
• pp.27-32
• /
• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.566-569
• /
• 2001

In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

• 한국표면공학회지
• /
• 제47권6호
• /
• pp.311-315
• /
• 2014

Indium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetron sputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the deposition under different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurements system. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC power increased with increasing annealing time. However, they increased with increasing annealing time at high DC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealing time. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.

• 한국표면공학회지
• /
• 제52권6호
• /
• pp.342-349
• /
• 2019

Titanium nitride(TiN) thin films have been deposited on PEN(Polyethylene naphthalate) substrate by reactive RF(13.56 MHz) magnetron sputtering in a 25% N₂/Ar mixed gas atmosphere. The pulsed DC bias voltage of -50V on substrates was applied with a frequency of 350 kHz, and duty ratio of 40%(1.1 ㎲). The effects of pulsed DC substrate bias voltage on the crystallinity, color, electrical properties of TiN_x films have been investigated using XRD, SEM, XPS and measurement of the electrical properties such as electrical conductivity, carrier concentration, mobility. The deposition rates of TiN_x films was decreased with application of the pulsed DC substrate bias voltage. The TiN_x films deposited without and with pulsed bias of -50V to substrate exhibits gray and gold colors, respectively. XPS depth profiling revealed that the introduction of the substrate bias voltage resulted in decreasing oxygen concentration in TiN_x films, and increasing the electrical conductivities, carrier concentration, and mobility to about 10 times, 5 times, and 2 times degree, respectively.