• 한국표면공학회지
• /
• 제46권5호
• /
• pp.187-191
• /
• 2013

Niobium nitride (NbN) films were deposited on AISI 304 stainless steels by inductively coupled plasma (ICP) assisted dc magnetron sputtering method at different ICP powers, and the effects of ICP power on the phase formation, mechanical and chemical properties of the films were investigated. X-ray diffraction analysis (XRD) and field emission scanning electron microscopy (FESEM) were used to analyze the crystal structure and micro-knoop hardness was used to measure the hardness of the films. Also, 3-D mechanical profiler and a ball-on-disk wear tester were used to measure the thickness of the films and to estimate wear characteristics, respectively. The thickness of the films decreased but their hardness increased with increasing ICP power, and it was confirmed that only cubic ${\delta}$-NbN(200) remained at high ICP power. At lower ICP powers, a mixture of the hexagonal ${\delta}^{\prime}$-NbN and cubic ${\delta}$-NbN phases was obtained in the films and the hardness decreased. The corrosion potential value increased gradually with increasing ICP power, but the changes of ICP power did not significantly influence the overall corrosion resistance.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
• /
• pp.58-61
• /
• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• 한국표면공학회지
• /
• 제39권3호
• /
• pp.98-104
• /
• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• Transactions on Electrical and Electronic Materials
• /
• 제10권5호
• /
• pp.169-172
• /
• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.537-540
• /
• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국표면공학회지
• /
• 제32권6호
• /
• pp.671-676
• /
• 1999

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows : operating pressure of 5 mTorr, target-substrate distance of 45mm, do power of 20~30W, and oxygen gas ratio of 10%. The optical transmittance is above 80% at 550 nm, and the sheet resistance and resistivity of films are 24 Ω/square and $1.5\times$10$^{-3}$ Ωcm, respectively.

• 열처리공학회지
• /
• 제12권3호
• /
• pp.199-205
• /
• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• 한국진공학회지
• /
• 제9권4호
• /
• pp.341-345
• /
• 2000

p형 Si (100)기판 위에 reactive DC magnetron sputtering으로 증착한 $ZrO_2$박막에 대하여 증착 조건과 열처리 조건에 따른 미세구조의 변화 및 전기적 특성 변화를 관찰하였다. 증착 및 열처리 온도가 증가하고 power 증가할수록 $ZrO_2$의 굴절율은 증가되어 이상적인 2.0~2.2에 근접하였다. 상온에서 증착된 $ZrO_2$ 박막은 비정질이며 $300^{\circ}C$에서 증착한 경우 $ZrO_2$박막은 다결정이었다. 산소 분위기에서 열처리를 수행한 박막의 RMS 값은 증착직후보다 높아지고 계면 산화막은 산소의 확산에 의해 두께가 증가하였다. A1/$ZrO_2$/p-type Si(100)의 C-V과 I-V 특성을 관찰하였고, 그 결과 산소분위기에서 열처리하는 경우 계면 산화막의 두께증가로 Cmax 및 누설전류가 감소함을 알 수 있었다.

• 한국자기학회지
• /
• 제11권3호
• /
• pp.129-133
• /
• 2001

본 연구에서는 TiO$_2$ 하지층이 첨가된 hexagonal barium-ferrite(BaM) 박막을 RF/DC magnetron sputtering system을 이용하여 상온에서 증착한 후, 여러 온도에서 열처리하여 결정화하였다. BaM박막에 TiO$_2$ 하지층을 첨가하여 열처리한 경우 Si와 BaM의 (006), (106), (114), (217), (2011) peak들이 사라지고 (008)의 intensity가 낮아졌으며 SiO$_2$와 (116), (302)의 peak들이 성장하였음을 XRD pattern을 통하여 알 수 있었다. BaM 박막의 자기적 특성을 VSM을 통하여 알아본 결과, 보자력, 잔류자화, 각형비 등의 자기적인 특성들은 수직에 비해 수평이 더 좋게 나타났는데, 이러한 결과로 박막면에 평행한 방향으로의 자화용이축이 존재하고 있다는 것을 알 수 있었다. SEM을 통하여 증착압력 및 열처리 시간에 따른 결정화 정도와 자기적 특성을 알아본 결과 5 mTor 보다 10 mTrr에서 더 좋게 나타났으며, 열처리를 시작한 뒤 10분 이내에 750 $^{\circ}C$ 이상에서 대부분의 특성변화가 일어났음을 알 수 있었다.

• 한국자기학회지
• /
• 제11권3호
• /
• pp.122-128
• /
• 2001

본 연구에서는 여러 하지층이 첨가된 hexagonal barium-ferrite(BaM) 박막을 RF/DC magnetron sputtering system을 이용하여 상온에서 증착한 후, 850 $^{\circ}C$에서 10분간 열처리하여 결정화하였다. BaM 박막에 여러 하지층을 첨가하여 고온 열처리한 경우 수평방향의 (107), (114) peak과 수직방향의 (006), (008) peak이 같이 관찰되어 결정이 random한 방향으로 성장되었다는 것을 알 수 있었다. BaM 박막의 자기적 특성을 VSM을 통하여 알아본 결과, 보자력 , 잔류자화, 각형비 등의 자기적인 특성들은 수직에 비해 수평이 좀더 좋게 나타났는데, 이러한 결과로 박막면에 평행한 방향으로의 자화용이축이 존재하고 있다는 것을 알 수 있었다. SEM과 AFM을 통하여 표면의 모양을 살펴본 결과 grain size는 박막의 두께가 두꺼워지면서 증가하였으며, 300 $\AA$ 두께에서 판상모양과 긴 모양의 grain들이 관찰되었다. 이러한 grain 모양은 박막의 두께가 600$\AA$으로 증가할 때까지 계속되는 것을 관찰하였으나, 1500$\AA$의 두께에서는 단지 긴 모양의 grain들만이 관찰되었다.