• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1989-1991
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• 1999

This paper presents characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-$(5{\sim}25%)N_2$). The physical and electrical characteristics of these films investigated with the thickness range $3500{\AA}$ of CrN thin films, annealing temperature $(100{\sim}300^{\circ}C)$ and annealing $(24{\sim}72hr)$. The optimized condition of CrN thin-film strain gauges were thickness range of $3500{\AA}$ and annealing condition($300^{\circ}C$, 48 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, ${\rho}=1147.65{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=$-186ppm/^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. And change in resistance after annealing for the CrN thin-films were quitely linear and stable.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.303-308
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• 2004

This paper descibes on the characteristics of Ta-N(tantalum nitride) ceramic thin-film strain gauges which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-nitrogen atmosphere (Ar-$(4{\sim}16%)N_{2}$) for high-temperature applications. These films were annealed in $2{\times}10^{-6}$ Torr vacuum furnace at the range of $500{\sim}1000^{\circ}C$. Optimum deposition atmosphere and annealing temperature were determined at $900^{\circ}C$ for 1 hr. in 8% $N_{2}$ gas flow ratio. Under optimum formation conditions, the Ta-N thin-film for strain gauges was obtained a high-resistivity of $768.93{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance (TCR) of -84 ppm/$^{\circ}C$ and a good longitudinal gauge factor (GF) of 4.12.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.253-258
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• 2005

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1375-1377
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, in which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%) $N_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition($300^{\circ}C$, 3 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}{\Omega}$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4$\sim$20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS..

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.13-22
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• 2002

This paper presents characteristics of CrOx thin-film Strain gauge pressure sensors, which were deposited on SUS630 diaphragm by DC reactive magnetron sputtering in an argon-Oxide atmosphere(Ar-(10%)$O_2$). The optimized condition of CrOx thin-film strain gauges were thicknessrange of 2500$\AA$ and annealing condition ($350^{\circ}C$, 3 hr) in Ar-10 %$O_2$deposition atmosphere. Under optimum conditions, the CrOx thin-films for strain gauge is obtained a high resistivity, $\rho$=156.7$\mu$$\Omega$cm, a low temperature coefficiect of resistance, TCR=-86 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 15. The output sensitivity of pressure sensor obtained is 2.46㎷/V and the maximum non-linearity is 0.3%FS and hysteresis is less than 0.2%FS. The output characteristics of pressure transmitter obtained is 4~20㎃ and total accuracy is less than $\pm$0.5%FS. In those conclusions, CrOx thin film pressure sensors is quite satisfactory for many applications in industrial electronics.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.