• 열처리공학회지
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• 제7권3호
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• pp.206-218
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• 1994

In 50%$NH_3+Air+N_2$ atmospheres, the effect of air additions on the growth characteristics of the compound layer during oxynitriding at $570^{\circ}C$ for 2hr in carbon and alloy steels has been investigated. The ammount of apparent residual ammonia during oxynitriding has shown to be increased with air additions(9~36 Vol. %) and X-ray diffraction analysis of case oxynitreded has shown that the compound layer consist of ${\varepsilon}-Fe_{2-3}$(N, C) phase and ${\gamma}^{\prime}-Fe_4$(N,C) phase. In the case of carbon steels, the thickness of oxide layer, compound layer and porous layer and the amount of ${\varepsilon}-Fe_{2-3}$(N,C) phase in the compound layer were increased with additions of air in 50%$NH_3+N_2$ atmospheres. At the same gas composition, the thickenss of oxide layer, compound layer and porous layer in alloy steels showed slightly thin layer thickness compared to those of carbon steels and the ${\gamma}^{\prime}-Fe_4$(N,C) phase in the compound layer of alloy steels was found barely. Therefore, the most obvious effect of air addition in the gas nitriding atmosphere has been found to in crease further kinetics of nitriding reaction.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between $Zn^{2+}$ ions from respective zinc precursors and $OH^-$ ions from $H_2O$.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.401-406
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• 2018

We investigated the effect of ZnO seed layer thickness on the density of ZnO nanorod arrays. ZnO has been deposited using two distinct processes consisting of the seed layer deposition using ALD and subsequent hydrothermal ZnO growth. Due to the coexistence of the growth and dissociation during ZnO hydrothermal growth process on the seed layer, the thickness of seed layer plays a critical role in determining the nanorod growth and morphology. The optimized thickness resulted in the regular ZnO nanorod growth. Moreover, the introduction of ALD to form the seed layer facilitates the growth of the nanorods on ultrathin seed layer and enables the densification of nanorods with a narrow change in the seed layer thickness. This study demonstrates that ALD technique can produce densely packed, virtually defect-free, and highly uniform seed layers and two distinctive processes may form ZnO as the final product via the initial nucleation step consisting of the reaction between Zn²⁺ions from respective zinc precursors and OH^- ions from H₂O.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.481-486
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• 2010

ENIG (electroless Ni immersion gold) is one of surface finishing which has been most widely used in fine pitch SMT (surface mount technology) and BGA (ball grid array) packaging process. The reliability for package bondability is mainly affected by interfacial reaction between solder and surface finishing. Since the behavior of IMC (intermetallic compound), or the interfacial reaction between Ni and solder, affects to some product reliabilities such as solderability and bondability, understanding behavior of IMC should be important issue. Thus, we studied the properties of ENIG with P contents (9 wt% and 13 wt%), where the P contents is one of main factors in formation of IMC layer. The effect of P content was discussed using the results obtained from FE-SEM(field-emission scanning electron microscope), EPMA(electron probe micro analyzer), EDS(energy dispersive spectroscopy) and Dual-FIB(focused ion beam). Especially, we observed needle type irregular IMC layer with decreasing Ni contents under high P contents (13 wt%). Also, we found how IMC layer affects to bondability with forming continuous Kirkendall voids and thick P-rich layer.

• 대한토목학회논문집
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• 제14권3호
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• pp.583-594
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• 1994

자연사면 붕괴의 주요인의 하나는 연약층에서의 간극수압 상승이다. 따라서 이 연약층내의 간극수압 계측이 중요하다. 본 연구는 피압지하수위, 풍화암반 파쇄대의 투수성 그리고 연약층의 풍화정도를 고려한 간극수압 계측의 실내모형 실험이다. 제3기층 붕괴형과 붕괴성 붕괴형의 모형으로 피압지하수 상태에서 filter의 투수성에 따른 연약층내에서의 간극공기압 및 간극수압의 반응을 측정하였다. 간극압의 반응양상에 있어서 제3기층 붕괴형은 시간 변화에 따라 반응양상이 계단형(step type)으로 나타났고 붕괴성 붕괴형은 파형(wave type)으로 나타났다. 간극수압 반응율은 제3기층 붕괴형이 붕괴성 붕괴형보다 크며, 연약층의 풍화도의 증가에 따라 간극수압 반응율은 감소하였다.

• 한국재료학회지
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• 제26권9호
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• 한국세라믹학회지
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• 제36권2호
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• pp.203-209
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• 1999

Si 기판위에 Ba2YCu3O7-$\delta$ 고온초전도체를 응용하기 위해 요구되는 buffer층으로 유망한 재료인 LaAlO3 단일상 분말을 고상반응법과 자발착한 연소반응법으로 제조하였다. 제조된 LaAlO3 분말의 입자형태와 결정상태는 scanning electron microscope (SEM)과 X-ray diffractometer (XRD)를 이용하여 분석하였다. 분말의 비표면적과 소결특성은 각각 Brunauer-Emmett-Teller(BET) 방법과 dilatometer를 측정하였다. 고상반응법으로 LaAlO3 분말을 제조할 때에는 하소온도를 150$0^{\circ}C$까지 높게 하여도 단일상을 얻는 것이 어려웠으나 자발착한 연소반응법에 의한 분말제조는 $650^{\circ}C$의 저온에서 하소하여도 쉽게 얻을 수 있었다. Dilatometer 측정을 통하여 분석해 보면, 고상반응법에 의한 분말보다 자발착한 연소반응법에 의한 분말로 제조된 소결체가 고상반응법에 의한 소결체에 비해 1.4배나 큰 소멸밀도(98.87%)를 가졌다. 이렇게 소결밀도에서 큰 차이가 나는 것은 자발착한 연소방법에 의한 분말의 평균 입자크기가 nano crystal size이고 비표면적 값(56.54 $m^2$/g)이 매우 크기 때문이다. 두가지 방법으로 제조된 분말을 이용, LaAlO3 layer를 스크린 프린팅과 소결법으로 Si 기판상에 제조하였으며 자발착한 연소합성법으로 제조된 분말은 110$0^{\circ}C$에서 우수한 소결특성을 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.270-270
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• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.