• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.156.1-156.1
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• 2011

It is of great importance to predict operating parameter characteristics of an integrated fuel processor by the increased life-time and system performance. In this study, computational analysis is performed to gain fundamental insights on transport phenomena and chemical reactions in reformer which consists of preheating, steam reforming, and water gas shift reaction beds. Also, a top-fired burner locates inside of the reforming system. The combustor is providing thermal energy necessary for the steam reforming bed which is a endothermic catalytic reactor. Two-dimensional numerical model of the integrated fuel processing system is introduced for the analysis of heat and mass transport phenomena as well as surface kinetics and catalytic process. A kinetic model was developed and then computational results were compared with the experimental data available in the literature. Subsequently, parameter study using the validated steam methane reforming model was conducted by considering operating parameters, i.e. steam to carbon ratio and temperature.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.185-189
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• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• 한국연소학회:학술대회논문집
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• 한국연소학회 1998년도 제17회 KOSCI SYMPOSIUM 논문집
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• pp.23-30
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• 1998

The stabilization characteristics of diffusion flame formed in the wake of a cylindrical flame holder were investigated. Distribution of turbulence intensity, concentration distribution of combustion gas, and ion currents were measured. The turbulence intensity in the wake of cylindrical- game holder is increased with increase of diameter or blockage ratio of grid. If the auxiliary fuel is injected into recirculation zone, the concentration of $C_3H_8$ is high, but the concentration of $CO_2$ is low at the boundary of recirculation zone. The region with highest average value of ion currents in the middle of flame is moved to the upstream side by the turbulent components of main stream. The flame mass with partially active reaction is moved fast for uniform flow and turbulence generator G3, but the flame mass with relatively slow reaction is moved slowly for turbulence generator G1.

• Bulletin of the Korean Chemical Society
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• 제25권10호
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• pp.1521-1524
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• 2004

The effect of $H_2$ gas on the carbon nanotubes (CNTs) synthesis with CO-$H_2$ gas mixture was investigated using mass measurements and scanning electron microscopy (SEM). The maximum weight and yield of the synthesized carbon were obtained when the mixture ratio of $H_2$: CO was 3 : 7 and 9 : 1, respectively. In case of 100% carbon monoxide (CO) without hydrogen ($H_2$) addition, the weight of carbon increased, but CNTs were not observed. The CNTs began to be made when the contents of $H_2$ reaches at least 10%, their structures became more distinct with an increase of $H_2$ addition, and then the shapes of CNTs were more thin and straight. When the contents of $H_2$ was 80% ($H_2$ : CO = 8 : 2), the shapes and growth of CNTs showed an optimal condition. On the other hand, when the contents of $H_2$ was higher than the critical value, the shapes of CNTs became worse due to transition into inactive surface of catalyst. It was considered that the inactive surface of catalyst resulted from decrease of carbon (C) and $H_2$ concentration by facilitation of methane ($CH_4$) gasification reaction (C + 2$H_2$ ${\rightarrow}$ $CH_4$) between C and $H_2$ gases. It was also found that H2 addition had an influence considerably on the shape and structure of CNTs.

• 설비공학논문집
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• 제12권6호
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• pp.533-540
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• 2000

Condensation heat transfer characteristics have been investigated experimentally when a water vapor is condensed on the outside of a horizontal copper tube in a condenser. This problem is of particular interest in the design of a LiBr-water absorption system. Hydrophilic surface modification was performed to increase the wettability on the copper tube. The optimum hydrophilic treatment condition using acethylene and nitrogen as reaction gas is also studied in detail. The results obtained indicate that the optimum reaction gas ratio of acethylene to nitrogen for hydrophilic surface modification was found to be 7 : 3 for the best condensation heat transfer. In the wide ranges of coolant inlet temperatures, and coolant mass flow rates, both the condensation heat transfer rate and the condensation heat transfer coefficient of a hydrophilic copper tube are increased substantially, compared with those of a conventional copper tube used in a condenser. It is also found that the condensation heat transfer enhancement by the hydrophilic surface modification still emains even after a hundred cycles of wet/dry processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.40-44
• /
• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.