• Title/Summary/Keyword: Reaction Crystallization

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Crystallization and Magnetic Properties of Iron Doped ZnO Diluted Magnetic Semicondutor (철을 미량 치환한 ZnO 희박자성반도체의 결정학적 및 자기적 특성 연구)

  • Ahn, Geun-Young;Park, Seung-Iel;Kim, Sam-Jin;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.15 no.2
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    • pp.92-95
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    • 2005
  • $Zn_{1-x}\;^{57}Fe_xO(x=0.01, 0.02, 0.03)$ compounds were fabricated using the solid-state reaction method. In order to determine magnetic behavior and ionic state of the doped transition metal ($^{57}Fe$) in ZnO, we carried out $M\ddot{o}ssbauer$ measurements at various temperatures ranging from 13 to 295 K. $M\ddot{o}ssbauer$spectra for $Zn_{0.97}\;^{57}Fe_{0.03}O$ at 4.2 K have shown the ferromagnetic phase (sextet), but the only paramagnetic phase (doublet) is seen at 295 K. The hysteresis loop below 77 K for $Zn_{0.97}\;^{57}Fe_{0.03}O$ indicated the coexistence of ferromagnetic and paramagnetic phases.

Synthetic Experiment on the Pt-Sb-Bi System: Phase Equilibria and Mineralogical Significance (백금-안티모니-비스머스계의 합성실험적 연구: 상관계 및 광물학적 의의)

  • 김원사
    • Journal of the Mineralogical Society of Korea
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    • v.11 no.2
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    • pp.117-125
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    • 1998
  • Crystallization behavior of platinum minerals within Pt-Sb-Bi bearing ore magmas and mineralogical properties of the existing minerals were investigated at 1,00$0^{\circ}C$ by synthetic experiment. High purity reagents were used as starting materials and silica tubings as containers. Reaction products were analysed by reflecting microscopy, X-ray diffraction, electron probe microanalysis, and micro-hardness test. Stable minerals at 1,00$0^{\circ}C$ are platinum, electron probe microanalysis, and micro-hardness test. Stable minerals at $1,000^{\circ}C$ are platinum, stump-flite (PtSb) and geversite (PtSb2). They are in equilibrium with liquid (ore magma). Platinum contains considerable amount of Sb of 7.5 at.%, whereas Bi only up to 0.9 at.%. Pure stumpflite is hexagonal with space group P63/mmc, and unit cell parameters are a=4.1318(6), c=5.483(1)$\AA$. VHN50=417(2)$\AA$. Geversite has cubic structure with space group Pa3. Cell parameters are a=6.4373(2)$\AA$ and Vicker hardness values VHN50=663.5 (566~766). Both stumpflite and geversite show solid solution and their end-members are Pt48.8Sb40.7-Bi10.5, and Pt33.7-Sb59.8Bi6.5, respectively. Although stumpflite (m.p. $1,043^{\circ}C$) and unnamed PtBi (m.p. 7$65^{\circ}C$) do not form a complete solid solution at $1,000^{\circ}C$, they are known, at $600^{\circ}C$, to form a continuous solid solution. Geversit (m.p. $1,226^{\circ}C$) also forms complete solid solution with insizwaite (m.p. $660^{\circ}C$). Unit cell dimensions of the minerals above increases with the amount of Bi substituting for Sb.

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Synthesis of Nanocrystalline ZnFe2O4 by Polymerized Complex Method for its Visible Light Photocatalytic Application: An Efficient Photo-oxidant

  • Jang, Jum-Suk;Borse, Pramod H.;Lee, Jae-Sung;Jung, Ok-Sang;Cho, Chae-Ryong;Jeong, Euh-Duck;Ha, Myoung-Gyu;Won, Mi-Sook;Kim, Hyun-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.30 no.8
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    • pp.1738-1742
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    • 2009
  • Nanocrystalline Zn$Fe_2O_4$ oxide-semiconductor with spinel structure was synthesized by the polymerized complex (PC) method and investigated for its photocatalytic and photoelectric properties. The observation of a highly pure phase and a lower crystallization temperature in Zn$Fe_2O_4$ made by PC method is in total contrast to that was observed in Zn$Fe_2O_4$ prepared by the conventional solid-state reaction (SSR) method. The band gap of the nanocrystalline Zn$Fe_2O_4$ determined by UV-DRS was 1.90 eV (653 nm). The photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method as investigated by the photo-decomposition of isopropyl alcohol (IPA) under visible light (${\geq}$ 420 nm) was much higher than that of the Zn$Fe_2O_4$ prepared by SSR as well as Ti$O_{2-x}N_x$. High photocatalytic activity of Zn$Fe_2O_4$ prepared by PC method was mainly due to its surface area, crystallinity and the dispersity of platinum metal over Zn$Fe_2O_4$.

Synthesis of a Sulfonic Acid Analogues of Peptides (Tauryl-L-Histidine) (Tauryl-L-Histidine 의 合成)

  • Park, Won-Kil
    • Journal of the Korean Chemical Society
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    • v.5 no.1
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    • pp.38-41
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    • 1961
  • By varying groups on biologically active molecules, it is possible to produce analogues which sometimes inhibit the action of the parent compound. Such is true of taurine(${\beta}$-amino-ethane sulfonic acid)as an analogue of ${\beta}$-alanine and of pantoyl taurine for pantothenic acid. It seemed possible that the sulfonic acid analogues of amino acids built into peptides might possibly produce inhibition of the parent peptide. Tauryl-L-histidine was selected to prepare as an analogue of carnosine(${\beta}$-alanyl-L-histidine). There were several reasons for this choice. Camosine causes a slight contraction of isolated uterine muscle and inhibition of this action can be easily tested. Also, taurine, being a ${\beta}$-amino sulfonic acid, is much more stable than the ${\beta}$-amino sulfonic acids. Phthalyl tauryl-L-histidine methyl ester was prepared by condensing phthalyl tauryl chloride with histidine methyl ester in chloroform. The yields were quite low possibly due to reaction between the acid chloride and the imidazole of histidine. Approximately 50 per cent yield of crude amorphous product was obtained, but upon purification by crystallization they yielded only 25 percent of a pure product. The methyl ester was removed by acid hydrolysis to prevent partial cleavage of the phthalyl group. Crystalline tauryl histidine was then obtained from this acid by removal of the phthalyl group by hydrazinolysis. Tests for inhibition were carried out by comparing the action of camosine on isolated uterine muscle before and after tauryl histidine had been added to the bath surrounding the muscle strip. Only in very high relative concentrations of tauryl histidine was there any demonstrable inhibition.

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Synthesis and Crystallization of Fine SiC-${Si_3}{N_4}$Composite Powders by the Vapor Phase Reaction (기상반응에 의한 SiC-${Si_3}{N_4}$복합 분말의 제조 및 결정화)

  • Kim, Hyoung-In;Choi, Jae-Moon;Kim, Suk;So, Myoung-Gi
    • Journal of the Korean Ceramic Society
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    • v.37 no.11
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    • pp.1091-1096
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    • 2000
  • 본 연구에서는 기상 반응법을 이용하여 TMS(Tetramethylsilane:Si($CH_3$)$_4$)와 NH$_3$그리고 H$_2$의 혼합기체로부터 반응 온도 1000~120$0^{\circ}C$ 및 입력비(NH$_3$/Si($CH_3$)$_4$) 1~3의 조건에서 초미분의 SiC-Si$_3$N$_4$복합 분말을 합성하였다. 합성되어진 복합 분말들의 결정상의 변화와 평균 입경을 알아보기 위해 XRD와 TEM 분석을 행한 결과, 구형의 비정질 분말이 형성되었으며, 입자의 크기는 약 70~130nm이었다. 입자의 크기는 입력비에 관계없이 거의 일정하였으나 반응 온도가 증가함에 따라서 감소하였다. FT-IR과 EA 분석 결과, 합성되어진 분말은 Si, N, C, 그리고 H로 이루어진 화합물임을 확인할 수 있었다. 또한 입력비가 다른 조건에서 합성되어진 분말을 $N_2$분위기 하에서 155$0^{\circ}C$로 2시간 열처리를 행한 결과, 낮은 입력비인 경우 $\beta$-SiC, $\alpha$-Si$_3$N$_4$$\beta$-Si$_3$N$_4$의 결정상들이 혼재하였으나, 높은 입력비인 경우는 결정화 후 $\alpha$-Si$_3$N$_4$상만이 존재하였다.

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Charge-Discharge Characteristics of Carbonaceous Materials for a Negative Electrode in Lithium-Ion Batteries (리튬이온전직용 카본계부극재료의 충방전 특성)

  • 김정식;박영태;김상열;장영철
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.69-74
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    • 1999
  • Graphite and carbonaceous materials intercalate and deintercalate Li-ion reversibly into their layered structures. These materials show an excellent capacity for using a negative electrode in Li-ion batteries, because the electrochemical potential of Li-ion intercalated carbon is almost identical with that of lithium metal. Carbon used in this study was obtained by the pyrolysis of petroleum pitch, and heat-treated at the several temperatures between $700^{\circ}C$ and $1300^{\circ}C$. XRD analysis revealed that crystallization of carbon increased with increasing the heat treatment temperature. Charge/discharge properties were studied by a constant-current step at the rate of 0.1C, and the interfacial reaction between the electrolyte and the surface of carbon electrode was studied by cyclic voltammetry. Cell capacities were investigated in terms of the heat treatment temperature and the cycle number. Reversible capacity increased with the heat treatment temperature up to $1000^{\circ}C$, thereafter decreased continuously. Also, charge capacity decreased with the cycle number, while the reversibility improved with it.

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Synthesis and dielectric properties of the $ZnAl_2O_4$ ceramics for low-firing (저온소결용 $ZnAl_2O_4$ 세라믹스의 합성 및 유전 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Kim, Shin;Kim, Nam-Hyup;Kim, Yun-Han;Shim, Sang-Heung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.279-279
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    • 2007
  • Synthesis and dielectric properties of glass-ceramic composites with zinc borosilicate glass(here after ZBS glass) were investigated as functions of $ZnAl_2O_4$ phase synthesis method, glass addition (50~60 vol%) and sintering temperature ($600{\sim}950^{\circ}C$ for 2 hrs). The 50 vol% ZBS glass-$Al_2O_3$ and 60 vol% ZBS glass-$ZnAl_2O_4$ ensured successful sintering below $900^{\circ}C$. But the composition of 100-x-y vol% ZBS glass-x vol% $Al_2O_3-y$ vol% ZnO exhibited poor sinterability below $900^{\circ}C$ and the swelling phenomenon occurred in this composite with the large amount of ZBS glass. The sintering behavior of Glass-ceramic composites was affected by the crystallization of $ZnAl_2O_4$ which was formed by the reaction between ZBS glass and $Al_2O_3$. Dielectric constant (${\varepsilon}_r$), $Q{\times}f$ value and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 and 60 vol% ZBS glass contents demonstrated $ZBS-Al_2O_3({\varepsilon}_r=5.7)$, $ZBS-ZnAl_2O_4({\varepsilon}_r=5.8)$ which is applicable to substrate requiring an low dielectric properties.

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Preparation of p-type transparent conducting $CuGaO_2$ thin film by DC/RF sputtering (DC-RF 스퍼터링에 의한 p형 투명 전도성 $CuGaO_2$ 박막의 제조)

  • Park, Hyun-Jun;Kwak, Chang-Gon;Kim, Sei-Ki;Ji, Mi-Jung;Lee, Mi-Jae;Choi, Byung-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.48-48
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    • 2007
  • P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

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RTA Post-treatment of Thermal T${a_2}{O_5}$ Thin Films (열산화 T${a_2}{O_5}$박막에 미치는 RTA후처리의 영향)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Han, Seong-Uk;Park, Sang-Gyun;Yang, Seung-Ji;Lee, Jae-Cheon;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.3 no.3
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    • pp.310-315
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    • 1993
  • The effects of RT A treatment on the breakdown strengths were studied for tantalum pentoxide(${Ta_2}{O_5}$) films prepared by thermal oxidation of dc-sputtered Ta(400$\AA$) on p-type (100) Si wafer. While the relative dielectric constants of the RT A -treated specimens were not remarkably affected, the breakdown strengths of the RTA-treated specimens were greatly changed by RTA temperature and time. After the RTA treatment, the breakdown strengths of the specimens RTA-treated at the temperature below the crystallization temperature were increased to 5.4MV /cm, while those of the specimens RTA -treated at the temperature above it were decreased to 0.5MV /cm. RTA time-independence of the flat-bant voltage shift refleted that the RT A post-annealing effects on the breakdown strengths were not due to the interface reaction between the ${Ta_2}{O_5}$ layer and the Si substrate but, through the RBS analysis, to densification of the ${Ta_2}{O_5}$ films.

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Effect of Ca Ion on the SCR Reaction over VOx/TiO2 (Ca 이온이 VOx/TiO2 SCR 반응에 미치는 영향 연구)

  • Kim, Geo Jong;Hong, Sung Chang
    • Applied Chemistry for Engineering
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    • v.27 no.2
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    • pp.165-170
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    • 2016
  • In this study, we investigated the cause of the decrease in activities of $VO_x/TiO_2$ SCR catalyst used for the burner reactor at a scale of $150000Nm^3/hr$ using X-ray diffraction (XRD), brunauer-emmett-teller (BET), atomic emission spectroscopy inductively coupled plasma (AES ICP), $H_2$ temperature programmed reduction ($H_2$-TPR), and $NH_3$ temperature programmed desorption ($NH_3$-TPD) analysis. Since the crystallization of the $VO_x$ and phase transition of $TiO_2$ did not occur, it was concluded that the catalyst was not deactivated by the thermal effect. In addition, from the elemental analysis showing that a large quantity of calcium was detected but not sulfur, the deactivation process of the $VO_x/TiO_2$ SCR catalyst was mainly caused by Ca but not by $SO_2$. The calcium was also found to decrease the catalytic activity by means of reducing $NH_3$ adsorption.