• Title/Summary/Keyword: Reactance Matching

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2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

  • Lee, Sang-Kyung;Bae, Kyung-Tae;Kim, Dong-Wook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.3
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    • pp.312-318
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    • 2016
  • This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

Design and fabrication of Ka-Band Analog Phase Shifter using GaAs Hyperabrupt Junction Varactor Diodes and Reactance Matching (GaAs Hyperabrupt Junction 바랙터 다이오드와 리액턴스 정합을 이용한 Ka-Band 아날로그 위상변화기의 설계)

  • ;Seong-Ik Cho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.5
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    • pp.521-526
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    • 2003
  • This paper describes performance data and design information on a reflection-type analog phase shifter used in Ka-band. Arranging a couple of GaAs hyperabrupt junction varactor diode parallel in a circuit, and applying reactance matching method accordingly, it is possible to 831 a large the phase shift. Design equation is formulated theoretically. Since the assembly process is important in Ka-band, this paper also includes the assembly process that is essential to minimize the generation of parasitic elements during the assembly process. It is obtained variable phase shift 220$^{\circ}$${\pm}$7$^{\circ}$ and insertion loss 5 dB${\pm}$1 dB as a measured result larger than the existing figure in Ka-band.

Design Analysis of Impedance Matching Circuit by Phasor Plot (페이저도에 의한 임피던스 정합회로 설계 해석)

  • Weon, La-Kyoung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.26 no.11
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    • pp.1686-1696
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    • 2022
  • The impedance matching circuit design technique based on the phasor plot introduced in this paper is based on the impedance triangle of electric circuit. It is a technique that designs through the construction of a phasor figure using the values given to the matching circuit design. The design pattern is based on L-type, inverted L-type, T-type, and 𝜋-type, and unknown reactance elements are determined through phasor shapes. In this paper, using a design by phasor plot, we design several cases, such as the case where the input and output ports are pure resistance and have reactance. It was confirmed that the design value was verified by serial-parallel equivalent conversion to achieve matching. This design technique can immediately grasp the phase or size of input/output power, so it is expected to be applied mainly in a low frequency band due to rapid design change and application.

New High-efficiency Power Amplifier System for High-directional Piezoelectric Transducer (고지향성 압전 트랜스듀서용 새로운 고효율 전력 증폭기)

  • Kim, Jin-Young;Kim, In-Dong;Moon, Wonkyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.3
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    • pp.383-390
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    • 2018
  • Piezoelectric micro-machined ultrasonic transducers for highly directional speaker need DC bias voltage. Most existing power amplifiers are not suitable for use in highly directional transducers because they are based on AC. In addition, since the piezoelectric micro-machined ultrasonic transducer has a large capacitive reactance, the power efficiency of the power amplifier is very low. Thus this paper proposes a new high efficiency power amplifier with DC bias voltage. In addition, by designing a matching circuit to compensate the capacitive reactance of the micro-machined ultrasonic transducer, the power efficiency of the power amplifier increases. The operating characteristics of the proposed power amplifier was verified by an experimental prototype. The proposed power amplifier is expected to be widely used in designing and implementing other related power amplifiers.

NIC-Based Non-Foster Impedance Matching of a Resistively Loaded Vee Dipole Antenna (네거티브 임피던스 변환기에 기반을 둔 저항성 V 다이폴 안테나의 논 포스터 임피던스 매칭)

  • Yang, Hyemin;Kim, Kangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.7
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    • pp.597-605
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    • 2015
  • Negative impedance converter(NIC)-based non-Foster impedance matching is proposed for an electrically small antenna. The antenna considered in this work is a resistively loaded vee dipole(RVD) antenna, which has considerable reflection at the feed point because of its large negative input reactance. The non-Foster matching circuit built near the feed point consists of two-stage NIC circuit and a capacitor connected between the stages. The NIC is realized by using operational amplifiers(op-amps) and resistors. The circuit is designed by considering of the input impedance according to the finite open-loop gain of the practical NICs. The stability test of the impedance-matched RVD antenna is performed. The non- Foster matching circuit is implemented with the RVD antenna. The measured impedance demonstrates that the proposed non-Foster matching circuit effectively reduces the input reactance of the RVD antenna.

Forced Resonant Type EMI Dipole Antennas for Frequencies Below 80 MHz

  • Kim, Ki-Chai
    • Journal of electromagnetic engineering and science
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    • v.2 no.1
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    • pp.45-49
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    • 2002
  • This paper presents the basic characteristics of a forced resonant type EMI dipole antennas for frequencies below 80 MHz in which two reactance elements are used for the impedance matching at the fined point. The input impedance of the short dipole less than half-wavelength is controlled by the properly determined loading position and the value of loading reactance. The numerical results show that the small-sized EMI dipole antenna with loller antenna factors for frequencies below 80 MHz can be realized by the reactance loading. In case tole proposed center driven forced resonant type EMI dipole antenna with 0.3 λ length is loaded from the center, the input impedance is matched at feed line with 50 $\Omega$, and hence the antenna has lower factors in the frequency range of 30 to 80 MHz.

Reactance Loaded Dipole Antennal Elements for Beam Tilting with Forced Resonance (리액턴스 장하 강제 공진형 지향성 틸트 다이폴 안테나 소자)

  • 김기채;권익승;서영석;박용완
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.2
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    • pp.278-285
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    • 2000
  • This paper presents the basic characteristics of the beam tilting dipole antenna element in which one reactance element is used for the impedance matching at the feed point. The radiation pattern is tilted by the properly determined driving point position, and the loading reactance is used to obtain forced resonance without great changes in tilt angle. The numerical results demonstrate that the reactance element should be loaded in the region where the driving point is placed to obtain forced resonance of the antenna with little changes in beam tilt angle. In case the proposed forced resonant beam tilting antenna with $0.8\lambda$ length is driven at $0.2\lambda$ from the center, the main beam tilt angle o.5 57.7 degrees, the highest power gain of 8.6 dB are obtained.

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λ/64-spaced compact ESPAR antenna via analog RF switches for a single RF chain MIMO system

  • Lee, Jung-Nam;Lee, Yong-Ho;Lee, Kwang-Chun;Kim, Tae Joong
    • ETRI Journal
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    • v.41 no.4
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    • pp.536-548
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    • 2019
  • In this study, an electronically steerable parasitic array radiator (ESPAR) antenna via analog radio frequency (RF) switches for a single RF chain MIMO system is presented. The proposed antenna elements are spaced at ${\lambda}/64$, and the antenna size is miniaturized via a dielectric radome. The optimum reactance load value is calculated via the beamforming load search algorithm. A switch simplifies the design and implementation of the reactance loads and does not require additional complex antenna matching circuits. The measured impedance bandwidth of the proposed ESPAR antenna is 1,500 MHz (1.75 GHz-3.25 GHz). The proposed antenna exhibits a beam pattern that is reconfigurable at 2.48 GHz due to changes in the reactance value, and the measured peak antenna gain is 4.8 dBi. The reception performance is measured by using a $4{\times}4$ BPSK signal. The measured average SNR is 17 dB when using the proposed ESPAR antenna as a transmitter, and the average SNR is 16.7 dB when using a four-conventional monopole antenna.

Feasibility study of a small linear antenna for near range wireless communications (근거리 무선 통신을 위한 소형 선형 안테나의 실현 가능성 연구)

  • 한대현;심재륜;최영식
    • Proceedings of the IEEK Conference
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    • 2000.06a
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    • pp.267-270
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    • 2000
  • The feasibility of small linear antenna for near range wireless communications was studied. The requirement of the system are frequency range 9∼12 MHz and antenna size 15 cm. The communication range is about 15 m. The antenna input impedance is very small radiation resistance and very large capacitive reactance. The lossless impedance matching is nearly impossible, therefore lossy matching is considered. The antenna has very low radiation efficiency. The near field calculation has a large uncertainty, but the results can be used as the guideline of a small linear antenna system for a near range wireless communication.

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Reduction of the bondwire parasitic effect using dielectric materials for microwave device packaging (초고주파 소자 실장을 위한 유전체를 이용하는 본딩와이어 기생 효과 감소 방법)

  • 김성진;윤상기;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.2
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    • pp.1-9
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    • 1997
  • For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

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