JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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2-6 GHz GaN HEMT Power Amplifier MMIC with Bridged-T All-Pass Filters and Output-Reactance-Compensation Shorted Stubs

  • Lee, Sang-Kyung (Department of Radio Science and Engineering, Chungnam National University) ;
  • Bae, Kyung-Tae (Department of Radio Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Wook (Department of Radio Science and Engineering, Chungnam National University)
  • Received : 2015.10.18
  • Accepted : 2016.02.11
  • Published : 2016.06.30
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Abstract

This paper presents a 2-6 GHz GaN HEMT power amplifier monolithic microwave integrated circuit (MMIC) with bridged-T all-pass filters and output-reactance-compensation shorted stubs using the $0.25{\mu}m$ GaN HEMT foundry process that is developed by WIN Semiconductors, Inc. The bridged-T filter is modified to mitigate the bandwidth degradation of impedance matching due to the inherent channel resistance of the transistor, and the shorted stub with a bypass capacitor minimizes the output reactance of the transistor to ease wideband load impedance matching for maximum output power. The fabricated power amplifier MMIC shows a flat linear gain of 20 dB or more, an average output power of 40.1 dBm and a power-added efficiency of 19-26 % in 2 to 6 GHz, which is very useful in applications such as communication jammers and electronic warfare systems.

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References

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