• Title, Summary, Keyword: Re-annealing

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Recovery of Etching Damage of the etched PZT Thin Films With $O_{2}$ Re-Annealing. ($O_{2}$ re-annealing에 의한 식각된 PZT 박막의 식각 damage 개선)

  • Kang, Myoung-Gu;Kim, Kyoung-Tae;Kim, Chang-Il;Chang, Eui-Goo;Lee, Byeong-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.8-11
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    • 2001
  • In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

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The Study on the Characteristics of ReRAM with Annealing Temperature and Oxide Thickness (열처리 온도 및 산화층 두께에 따른 ReRAM 특성 연구)

  • Choi, Jin-hyung;Lee, Seung-cheol;Cho, Won-Ju;Park, Jong-tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.722-725
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    • 2013
  • In this work, we have been analyzed the characteristics of ReRAM with different annealing condition and temperature. The ReRAM devices with top electrode=150nm, bottom electrode=150nm, oxide thickness=70nm and annealing temperature=$500^{\circ}C$, $850^{\circ}C$ have been used in characterization. The Set/Reset voltage, sensing window and resistivity have been characterized. From the measurement results, the Set/Reset voltage and sensing window have been enhanced as the annealing temperature has been increased. But it has been decreased as the temperature performance has been increased. In case of the annealing temperature=$850^{\circ}C$, the variation of Set/Reset voltage was lower than that of other condition. But the variation of sensing window was the lowest when the annealing temperature was $500^{\circ}C$. With considering the variation of Set/Reset voltage and sensing window, the devices annealed at $850^{\circ}C$ showed the best performance to ReRAM.

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Microwave Annealing in Ag/HfO2/Pt Structured ReRAM Device

  • Kim, Jang-Han;Kim, Hong-Ki;Jang, Ki-Hyun;Bae, Tae-Eon;Cho, Won-Ju;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.373-373
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    • 2014
  • Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

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Reduce of Etching Damage of PZT Thin Firms with Addition of Ar and O2 in Cl2/CF4 Plasma (Cl2/CF4 플라즈마에 Ar, O2 첨가에 따른 PZT 박막의 식각 손상 개선 효과)

  • 강명구;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.4
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    • pp.319-324
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    • 2002
  • In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

Reduce of Etching Damage of PZT Thin Films in $Cl_2/CF_4$ Plasma with addition of Ar and $O_2$ ($Cl_2/CF_4$ 플라즈마 Ar, $O_2$ 첨가에 따른 PZT 막막의 식각 손상 효과)

  • Kang, Myoung-Gu;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.21-25
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    • 2001
  • In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

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Reduce of Etching Damage of PZT Thiin Films in $Cl_{2}/CF_{4}$ Plasma with addition of Ar and $O_2$ ($Cl_{2}/CF_{4}$ 플라즈마에 Ar,$O_2$첨가에 따른 PZT 박막의 식각 손상 효과)

  • 강명구;김경태;김창일
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.21-25
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    • 2001
  • In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

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A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor

  • Cho, Doohyung;Park, Kunsik;Yoo, Seongwook;Kim, Sanggi;Lee, Jinhwan;Kim, Kwangsoo
    • Journal of the Korean Physical Society
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    • v.71 no.3
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    • pp.150-155
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    • 2017
  • The effect of $N_2O$ direct oxidation processes with re-oxidation on $SiC/SiO_2$ interface characteristics has been investigated. With different oxidation and post oxidation annealing (POA) processes, the flat-band voltage, effective dielectric charge density, and interface trap density are obtained from the capacitance-voltage curves. For the proposed $N_2O$ direct oxidation processes with re-oxidation, oxides were grown in $N_2O$ ambient, diluted in high-purity $N_2$ to 10% concentration, for 5 h at $1230^{\circ}C$. After the growth, some samples were annealed additionally at $1200^{\circ}C$ in $O_2$ or $H_2O$ for 20 min. $N_2O$ direct oxidation with re-oxidation processes was confirmed that SiC/SiO2 interface properties and dielectric stability have better performance than with other conventional oxidation processes. This oxidation technique is expected to improve gate dielectric stability for application to SiC MOS devices; in particular, it can be used to obtain high-quality $SiC/SiO_2$ interface properties.

Recovery of Etching Damage of Etched PZT Thin Film by Inductively Coupled Plasma (유도결합 플라즈마에 의해 식각된 PZT 박막의 식각 Damage 개선)

  • 강명구;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.7
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    • pp.551-556
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    • 2001
  • In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

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