• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.262-266
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• 2007

Polycrystalline $Mn_xFe_{3-x}O_4$ thin films were synthesized on Si(100) substrates using sol-gel method and the effects of Mn substitution on the structural, magnetic, and magnetotransport properties were analyzed. X-ray diffraction revealed that cubic structure is maintained up to x = 1.78 with increasing lattice constant for increasing x. Such increase of the lattice constant is attributable to the substitution of $Mn^{2+}$ (with larger ionic radius) ions into tetrahedral $Fe^{3+}$(with smaller ionic radius) sites. VSM measurements revealed that $M_s$ does not vary significantly with x, qualitatively explainable by comparing spin magnetic moments of Mn and Fe ions. On the other hand, $H_c$ was found to decrease with increasing x, attributable to the decrease of magnetic anisotropy due to the decrease of $Fe^{2+}$ density through $Mn^{2+}$ substitution. Magnetoresistance (MR) of the $Mn_xFe_{3-x}O_4$ films was found to decrease with increasing x. Analysis of the MR data in comparison with the VSM results gives an indication of the tunneling of spin-polarized carriers through the grain boundaries of the polycrystalline samples at low external field and spin-flip of the carriers at high external field.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.358-359
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• 2012

최근 분극 특성이 상이한 무분극 GaN 에피성장에 관한 심도 있는 연구와 함께 전자-전공 캐리어의 주입 및 캐리어의 거동, 방출되는 편광 특성 및 다양한 물리적 특성들에 대해 보고되고 있으며, 광학적 특성 및 물리적 특성의 확보를 위한 많은 연구가 활발히 진행 중이다 [1]. GaN의 ohmic 접촉(ohmic contact)의 형성은 발광 다이오드(light emitting diode), 레이저 다이오드(Laser), 태양전지(solar cell)와 같은 고신뢰도, 고효율 광전자 소자를 제조하기 위해서는 매우 중요하다 [2]. 그러나 이와 함께 병행 되어야 할 무분극 p-GaN 의 ohmic contact에 관한 연구는 많이 이루어지고 있지 않는 실정이다. 따라서 본 논문에서는 r-plane 사파이어 기판 상에 성장된 p-GaN에서의 ohmic 접촉 형성 연구를 위하여 Ni/Au ohmic 전극의 접촉저항 특성을 연구하였다. 본 실험에서는 성장된 a-plane GaN의 Hole농도가 $3.09{\times}1017cm3$ 인 시편을 사용하였다. E-beam evaporation 장비를 이용하여 Ni/Au를 각각 20 nm 그리고80 nm 증착 하였으며 비접촉저항을 측정하기 위해 Circle-Transfer Length Method (C-TLM) 패턴을 사용하였다. 샘플은 RTA (Rapid Thermal Annealing)를 사용하여 $300^{\circ}C$에서 $700^{\circ}C$까지 온도를 변화시키며 전기적 특성을 비교하여 그림 1(a) 나타내었다. 그림에서 알 수 있듯이 $400^{\circ}C$에서 가장 낮은 비접촉저항 값인 $6.95{\times}10-3{\Omega}cm2$를 얻을 수 있음을 발견하였다. 이 때의 I-V curve 도 그림1(b)에 나타낸 바와 같이 열처리에 의해 크게 향상됨을 알 수 있다. 그러나, $500^{\circ}C$ 이상 온도를 증가시키면 다시 비접촉 저항이 증가하는 것을 관찰하였다. XRD (x-Ray Diffraction) 분석을 통하여 $400^{\circ}C$ 이상열처리 온도가 증가하면 금속 표면에 $NiO_2$가 형성되며, 이에 따라 오믹특성이 저하 된다고 사료된다. 또한 $Ni_3N$의 존재를 확인 하였으며 이는 nonpolar surface의 특성으로 인해 nitrogen out diffusion 현상이 동시에 발생하여 계면에는 dopant로 작용하는 질소 공공을 남기고 표면에 $Ni_3N$을 형성하여 ohmic contact의 특성이 저하되기 때문인 것으로 사료된다.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1192-1203
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• 1996

$Al_2O_3-TiO_2$ composite oxide adsorbents which could be applied in high-temperature water were prepared by hydrolysis of aluminum and titanium alkoxide. The prepared adsorbents were calcined at $600{\sim}1400^{\circ}C$ and in order to investigate the various properties - the transition of crystals, thermal properties, and specific surface area, X-ray diffractometry, thermal analysis, FT-IR, SEM and BET method were employed. And the $Co^{2+}$ adsorption characteristics of these adsorbents in high-temperature water were investigated by batch adsorption experiment in a stirred autoclave. Since the adsorption of $Co^{2+}$ on the $Al_2O_3-TiO_2$ adsorbents was irreversible endothermic in the temperature range of $150{\sim}250^{\circ}C$, the standard enthalpy changes of 26, 43, and 80 mol% of $TiO_2$ on $Al_2O_3$ were in the range of $16.5{\sim}26.0kJ{\cdot}mol^{-1}$. The adsorbent of 26 mol% of $TiO_2$ on $Al_2O_3$ which was calcined at $600^{\circ}C$ for 2 hours showed the adsorption amount of $0.1674meq{\cdot}g^{-1}$ in the high temperature water at $250^{\circ}C$.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.547-553
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• 2017

This study focused on the difference of photocatalytic performance by the incorporation of Pd into the $TiO_2$ framework and suggested five different catalysts composed of $TiO_2$ and x mol% $Pd-TiO_2$ (x = 0.25, 0.5, 0.75, and 1.0). A typical sol-gel method was used to synthesize catalysts, and the phenol photodegradation performance of each catalysts was evaluated. The physicochemical and optical properties of catalysts were confirmed by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy/energy dispersive spectrometer (SEM/EDS), ultraviolet/visible spectroscopy (UV/Vis), photoluminescence spectroscopy (PL), and photocurrent measurements. With the addition of Pd ions, the band gap of catalysts was shortened and the charge separation between photogenerated electrons and holes easily also occurred. As a result, the phenol photo-destruction performance over 0.75 mol% $Pd-TiO_2$ catalyst was 3 times higher than that of pure $TiO_2$. This is believed to be due to Pd ions acted as an electron capturing function during photocatalysis.

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.2
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• pp.323-330
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• 2004

The purpose of this study was to evaluate the diagnostic validity of early proximal caries lesions using laser fluorescence and whether the detection could be enhanced using a fluorescent dye. Direct visual examination and bitewing radiograph were used for comparison. The subjects of this study were 30 children of $3{\sim}9$ years old. Laser fluorescence and dye-enhanced laser fluorescence(mixed wavelength of 488 and 514 nm) were used and viewed through glasses(excluding wavelength<520 nm). For dye-enhanced laser fluorescence a 0.075% sodium fluorescein dye was applied before examination. Proximal caries lesion of each subject was assessed using visual examination, bitewing radiograph, laser fluorescence, and dye-enhanced laser fluorescence. The results in the three detection methods were compared to the assessment of bitewing radiograph. The results from the present study can be summarized as follows: 1. There was highly correlation(r=0.725-0.911) between the bitewing radiograph and all three detection methods(p<0.05) 2. The reproducibility(kappa value) of the visual examination, laser fluorescence and dye-enhanced laser fluorescence comparing with bitewing radiograph of proximal caries was 0.451, 0.683, 0.772, respectively. There was highest correlation between dye-enhanced laser fluorescence and bitewing radiograph for detection of proximal caries. The results from this study indicated that the dye-enhanced laser fluorescence considered to be accurate and reliable method in detecting proximal caries.