• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.169-172
• /
• 2004

The effect of the process parameters on the stable lifetime in rapid thermal firing(RTF) was investigated in order to optimize the process for the Cz-silicon. The process temperature was varied between $700^{\circ}C\;and\;950^{\circ}C$ while the process time was chosen 1 s and 10 s. At below $850^{\circ}C$ the stable lifetime for 10 s is higher than that for 1 s and increases with increasing by the process temperature. However, at over $850^{\circ}C$ the improved stable lifetime is not dependent on the process time and temperature. On the other hand, two high temperature processes in solar cell fabrics are combined with the optimized process and the non-optimized process. The last process determines the stable lifetime. Also, the degraded stable lifetime could be increased by processing in optimized process. The decreased lifetime can increase using the optimized oxidation process, which is a final process in solar cells. Finally, the optimized and non-optimized processes are applied solar cells.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.168-175
• /
• 1992

The surface and interface morphology as well as the sheet resistance, and uniformity of TiSiz film are significantly improved and the lateral titanium silicide growth over the oxide spacer is minimized by the use of ion beam mixing and rapid thermal annealing in nitrogen ambient. In addition, TiSiz film formations on TiISi and TiISiOz system were also studied.

• Applied Chemistry for Engineering
• /
• v.16 no.3
• /
• pp.305-311
• /
• 2005

The thermal plasma process has excellent characteristics such as high temperature, high chemical activity and rapid quench, and has been applied to various fields. In this review, we briefly describe the characteristics for the process and the system components for producing ultra-fine powders including metal, ceramic, and composites. The key technology for the process will be discussed. We aimed to demonstrate the feasibility of the process for producing high quality ultra-fine powders using thermal plasma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.500-501
• /
• 2005

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.105-109
• /
• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.1455-1458
• /
• 2007

In this research, a polycrystalline silicon (poly-Si) film layer for micro thermoelectric generator (TEG) was fabricated. The fabrication process of the thermoelectric poly-Si film layer is explained. The P-type and N-type poly-Si films were fabricated on a tetra ethoxy silane (TEOS) layer with a supporting Si wafer. Seebeck coefficient and electrical conductivity were measured, including the transport properties such as the hall coefficient, hall mobility and carrier concentration. The design parameters for a rapid thermal process (RTP) were decided based on the experimental results. The measured power factors of the P-type and N-type were $21.2\;{\mu}Wm^{-1}K^{-2}$ and $26.7\;{\mu}Wm^{-1}K^{-2}$, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.6 no.4
• /
• pp.57-64
• /
• 2007

In the recent years, development of machine tool with high speed feeding system have brought a rapid increase in productivity. Practically, thermal deformation problem due to high speed is, however, become a large obstacle to realize high precision machining. In this study, therefore, the construction of automatic error compensation system to control thermal deformation in high speed feeding system with real time is proposed. To attain this purpose, high speed feeding system with feeding speed 60mm/min is developed and experimental equation for relationship between thermal deformation and temperature of ball screw shaft using multiple regression analysis is established. Furthermore, in order to analyze thermal deformation error, compensation coefficient is determined and thermal deformation experiments is carried out. From obtained results, it is confirmed that automatic error compensation system constructed in this study is able to control thermal deformation error within $15{\sim}20{\mu}m$.

• Current Photovoltaic Research
• /
• v.1 no.2
• /
• pp.82-89
• /
• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.18 no.9
• /
• pp.2404-2412
• /
• 1994

A mathematical model has been developed for predicting kinematic, thermal, and solidification histories of atomized droplets during flight. Liquid droplet convective cooling, recalescence, equilibrium-state solidification, and solid-phase cooling were taken into account in the analysis of the solidification process. The spherical shell model was adopted where the heterogeneous nucleation is initiated from the whole surface of a droplet. The growth rate of the solid-liquid interface was determined from the theory of crystal growth kinetics with undercooling caused by the rapid solidification. The solid fraction after recalescence was obtained by using the integral method. The thermal responses of atomized droplets to gas velocity, particle size variation, and degree of undercooling were investigated through the parametric studies. It is possible to evaluate the solid fraction of the droplet according to flight distance and time in terms of a dimensionless parameter derived from the overall energy balance of the system. It is also found that the solid fraction at the end of recalescence is not dependent on the droplet size and nozzle exit velocity but on the degree of subcooling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.6
• /
• pp.576-581
• /
• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.