• Journal of the Korea Institute of Building Construction
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• v.21 no.6
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• pp.539-550
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• 2021

In this study, Zn and Zn-15Al were coated on general carbon steel by plasma arc metal spraying and then immersed in a 3.5wt.% NaCl solution similar to the seawater environment to evaluate the corrosion resistance properties. Through the surface shape analysis test by SEM and XRD, it was found that the Zn coating was porous and needle-shaped, so the penetration of the electrolyte was easy, and thus the corrosion rate was rapid. On the other hand, the Zn-15Al coating had a uniform and dense shape and was shown to suppress corrosion.

• Advances in nano research
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• v.14 no.4
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• pp.355-362
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• 2023

Physical exercise, especially intense exercise and high intensity interval training (HIIT) by trampoline, can lead to muscle injuries. These effects can be reduced with intelligent products made of nanocomposite materials. Most of these nanocomposites are polymers reinforced with silicon dioxide, alumina, and titanium dioxide nanoparticles. This study presents a polymer nanocomposite reinforced with silica. As a result of the rapid reaction between tetraethyl orthosilicate and ammonia in the presence of citric acid and other agents, silica nanostructures were synthesized. By substituting bis (4-amino phenoxy) phenyl-triptycene in N, N-dimethylformamide with potassium carbonate, followed by catalytic reduction with hydrazine and Pd/C, the diamine monomer bis (4-amino phenoxy) phenyl-triptycene is prepared. We synthesized a new polyaromatic (imide) with triptycene unit by sol-gel method from aromatic diamines and dianhydride using pyridine as a condensation reagent in NMP. PI readily dissolves in solvents and forms robust and tough polymer films in situ. The FTIR and NMR techniques were used to determine the effects of SiO₂ on the sol-gel process and the structure of the synthesized nanocomposites. By using a simultaneous thermal analysis (DTA-TG) method, the appropriate thermal operation temperature was also determined. Through SEM analysis, the structure, shape, size, and specific surface area of pores were determined. Analysis of XRD results is used to determine how SiO₂ affects the crystallization of phases and the activation energy of crystallization.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1114-1123
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• 2015

Bushing is the key link to connect outer and inner insulating systems and also the essential electric accessory in electric power system, especially in the high voltage engineering (AC 1000kV, DC 800kV). This paper presented the experimental research of thermal aging characteristic of oil-paper insulation used in bushing. A thermally accelerated aging experiment at 90℃ was performed. The bushing models containing five layers of paper were sealed into the aging vessels and further aged for 250 days. Then several important parameters associated with the aging were observed and evaluated. The results showed that the degree of polymerization (DP) of papers gradually decreased. The DP values of outermost layer and middle layer fit well into the second-order kinematic model and first-order kinematic model, respectively. Less deterioration speed of the inter-layer paper than outer layer was confirmed by the variation of DP. Hydrolysis was considered as the main cause to this phenomenon. In addition, the logarithm of the furfural concentrations in insulation oil was found to have good linear relationship with DP of papers. Interestingly, when the aging time is about 250 days and DP is 419, the aging process reaches an inflection point at which the DP approaches the leveling off degree of polymerization (LODP) value. Both tanδ and acid number of oils increased, while surface and volume resistivity of papers decreased. The obtained results demonstrated that thermal aging and moisture absorbed in papers brought great influence to the degradation of insulating paper, leading to rapid decrease of DP and increase of the tanδ. Thus, the bushing should be avoided from damp and real-time monitoring to the variation of tanδ and DP values of paper is an effective way to evaluate the insulation status of bushing.

• Journal of the Korean Society of Safety
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• v.38 no.3
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• pp.27-34
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• 2023

With the technological development of the semiconductor industry, the roles of electrical and thermal energy supply and control of semiconductor equipment in ultrafine processes have become very important. However, instances of electrical fires in the chiller heater, which is used for cooling in the semiconductor manufacturing process, are increasing. A fire occurs in combustibles due to high heat at the connection part of the chiller heater, that is, when the number of electrical wires in the connection part is reduced or when the wires are completely disconnected. In this study, the temperature characteristics were compared and analyzed through experiments and 3D simulations. The number of electrical wires, which is the connection part of the chiller heater, was reduced by 90%, 50%, 30%, 10%, and 5%, and the wires were completely disconnected. When the number of electrical wires was reduced by 5%, heat of up to 80℃ was generated, which is a relatively high temperature but insufficient to cause a fire in combustibles. Complete disconnection occurred due to the vibration of the motor and other components, and sparks and arcs were generated, resulting in a rapid increase in temperature to up to 680℃. When completely disconnected, the temperature increase was sufficient to cause a fire in the combustibles covering the terminal block. Therefore, in this study, the causes of electrical fires in chiller heaters were investigated and preventive measures were proposed by analyzing abnormal signals and thermal characteristics caused by the electrical wiring being reduced and completely disconnected.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.9
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• pp.100-106
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• 2020

This study analyzes the residual stress of AISI 1536V for an engine shaft of the shipbuilding industry and AISI A387 for a reactor shell of the chemical refining industry by the hole drilling method with a strain gauge rosette, which transforms fine mechanical changes into electrical signals. Tensile residual stress is generated in the forging and heat treatment process because specimens are affected by thermal stress and metal transformation stress. In the heat treatment process, the residual stress of AISI A387 is almost 170% the yield strength at 402 MPa. Since during the machining process, variable physical loads are applied to the material, compressive residual stress is generated. Under the same condition, the mechanical properties greatly affect the residual stress during the machining process. After the stress-relieving heat treatment process, the residual stress of AISI A387 is reduced below the yield strength at 182 MPa. Therefore, it is necessary to control the temperature, avoid rapid heat change, and select machining conditions depending on the mechanical properties of materials during manufacturing processes. In addition, to sufficiently reduce the residual stress, it is necessary to study the optimum condition of the stress-relieving heat treatment process for each material.

• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.378-383
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• 2007

A novel fabrication method for the multi-component metal oxides such as zirconium titanate($Zr_xTi_{1-x}O_2$) has been suggested, which would yield the uniform film characteristics and control the film composition at relatively low process temperature. The method has the basic concept that firstly layer-by-layer structure is constructed with the primitive oxide layers, which are components of the desired multi-component oxides, and secondly the film is annealed at appropriate thermal conditions for the transformation to a single-phase multi-component oxides. In this study, PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) possessing the superior thickness controllability was introduced to prepare $ZrO_2$ and $TiO_2$ thin film for zirconium titanate. Single-phase zirconium titanate thin films have been prepared successfully by the interdiffusion of oxide multilayers having several alternating layers of $ZrO_2$ and $TiO_2$. The Zr/Ti ratio of zirconium titanate could be controlled easily by altering the thickness of $ZrO_2$ and $TiO_2$ thin film.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.4
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• pp.27-36
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• 2006

We fabricated thermally evaporated 10 nm-Ni/(poly)Si, 10 nm-Ni/l nm-Ir/(poly)Si and 10 nm-Ni/l nm-Pt/(poly)Si films to investigate the thermal stability of nickel monosilicides at the elevated temperatures by rapid annealing them at the temperatures of $300{\sim}1200^{\circ}C$ for 40 seconds. Silicides of 50 nm-thick were formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to examine sheet resistance. A scanning electron microscope and field ion beam were employed for thickness and microstructure evolution characterization. An X-ray diffractometer and an Auger depth profiler were used for phase and composition analysis, respectively. Nickel silicides with platinum have no effect on widening the NiSi stabilization temperature region. Nickel silicides with iridium farmed on single crystal silicon showed a low resistance up to $1200^{\circ}C$ while the ones formed on polycrystalline silicon substrate showed low resistance up to $850^{\circ}C$. The grain boundary diffusion and agglomeration of silicides lowered the NiSi stable temperature with polycrystalline silicon substrates. Our result implies that our newly proposed Ir added NiSi process may widen the thermal process window for nano CMOS process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.266-272
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• 2009

In the present work three dimensional process and device simulations were employed to study the performance variations with RTA. It is observed that with the increase in RTA temperature, the arsenic dopants from the source /drain region diffuse laterally under the spacer region and simultaneously acceptors (Boron) are redistributed from the central axis region of the fin towards the Si/SiO2 interface. As a consequence both drive current and peak cut-off frequency of an n-FinFET are observed to improve with RTA temperatures. Volume inversion and hence the flow of carries through the central axis region of the fin due to reduced scattering was found behind the performance improvements with increasing RTA temperature.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.409-412
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• 1998

In this paper, we present an $H^2$ controller design of RTP(rapid thermal processing) systems satisfying robust stability and performance using weighted mixed sensitivity minimization. In industrial fields, RTP system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity has been solved by PID control method. Because the reference inputs of RTP are ramp, we improve performance of RTP system by the design of $H^2controller$ using the weighted mixed sensitivity function. Also we compare $H^2controller$ with PID controller in terms of performance. An example is proposed to show the validity of proposed method.

• Journal of the Korean Ceramic Society
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• v.30 no.10
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• pp.803-810
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• 1993

PbxZr0.4Ti0.6O3 thin films were prepared by reactive co-sputtering and annealed by RTA(Rapid Thermal Annealing) process. Effect of Pb content in PbxZr0.4Ti0.6O3 films on the phase transformation was intensively studied. It has been found out that depending on the Pb content as well as RTA temperature, crystal structure of PbxZr0.4Ti0.6O3 films change greatly. It turned out that transformation temperature for perovskite can be lowered and the width of transition temperature region was reduced by increasing Pb content in the film. And the lattice was expanded with increasing Pb content. With increasing RTA temperature, as-deposited phase was transformed into perovskite through three different transformation paths depending on Pb content. It was confirmed that activation energies for nucleation of perovskite structure are much larger than those of its growth.