• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.27-28
• /
• 2007

In this paper, Ni-Co alloy was used for improvement of thermal stability of Ni silicide. The proposed Ni/Ni-Co structure exhibited wide temperature window of rapid thermal process. Sheet resistance as well as cross-sectional profile showed stable characteristics in spite of high temperature annealing up to $700^{\circ}C$ for 30min. Therefore, the proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni silicide for nano-scale CMOSFET technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.16-17
• /
• 2006

In this paper, Ni-V alloy was studied with different structures and thickness. In case of Ni-V and Ni-V/Co/TiN, low resistive Ni silicide was formed after one step RTP (Rapid Thermal Process) with temperature range from $400^{\circ}C$ to $600^{\circ}C$ for 30sec in vacuum. After furnace annealing with temperatures range from $550^{\circ}C$ to $650^{\circ}C$ for 30min in nitrogen ambient, Ni-V single structure shows the best thermal stability compare with the other ones. To enhance the thermal stability up to 650oC and find the optimal thickness of Ni silicide, different thickness of Ni-V was studied in this work. Stable sheet resistance was obtained through Ni-V single structure with optimal Ni-V thickness.

• Journal of the Korean Magnetics Society
• /
• v.24 no.1
• /
• pp.18-21
• /
• 2014

The microwave absorption ($P_{tot}$), which is the double integration value of ferromagnetic resonance signal, propositional to the saturation magnetization, and the increase of the $P_{tot}$ measured during the thermal reaction time expect the growth process of the nanoparticles. Therefore, in this work, we measured the $P_{tot}$ in order to obtain the growth time of iron oxide nanoparticles after thermal decomposition of $Fe(acac)_3$ precursor at aging temperature $T_a=273$, 300 and $324^{\circ}C$, respectively. The best condition for monodisperse nanoparticles was obtained at $T_a=300^{\circ}C$, which condition showed the most rapid increase of $P_{tot}$ with thermal reaction time. Finally, the rapid growth rate was necessary condition for the synthesis of iron-oxide monodisperse nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.380-381
• /
• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.274-277
• /
• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.08a
• /
• pp.157-157
• /
• 2008

• 제어로봇시스템학회:학술대회논문집
• /
• 2003.10a
• /
• pp.2606-2611
• /
• 2003

Comprehensive study on the control system design for a RTP process has been conducted. The purpose of the control system is to maintain maximum temperature uniformity across the silicon wafer achieving precise tracking for various reference trajectories. The study has been carried out in two stages: thermal balance modeling on the basis of a semi-empirical radiation model, and optimal iterative learning controller design on the basis of a linear state space model. First, we found through steady state radiation modeling that the fourth power of wafer temperatures, lamp powers, and the fourth power of chamber wall temperature are related by an emissivity-independent linear equation. Next, for control of the MIMO system, a state space modeland LQG-based two-stage batch control technique was derived and employed to reduce the heavy computational demand in the original two-stage batch control technique. By accommodating the first result, a linear state space model for the controller design was identified between the lamp powers and the fourth power of wafer temperatures as inputs and outputs, respectively. The control system was applied to an experimental RTP equipment. As a consequence, great uniformity improvement could be attained over the entire time horizon compared to the original multi-loop PID control. In addition, controller implementation was standardized and facilitated by completely eliminating the tedious and lengthy control tuning trial.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2002.10a
• /
• pp.274-278
• /
• 2002

Surface finishing is still indispensable for most rapid prototyping (RP) processes because of the inherent stair-stepped surface and shrinkage of the parts. These problems can be minimized in the $VLM-_ST$ Process, because it uses expandable polystyrene foam sheets, each of which has a thickness of3.9 mm and a linear-interpolated side slope. The use of thick layers, however, limits the process capability of constructing fine details. This study focuses on the design of post-processing tool for fine details of $VLM-_ST$ parts and investigation of thermal characteristics during EPS foam cutting using the post-processing tool. To calculate the heat flux from the tool into the foam sheet, the tool was modeled as a heat source of radiation for finite element analysis. Results of the analysis agreed well with those of the experiment.

• Resources Recycling
• /
• v.7 no.5
• /
• pp.19-25
• /
• 1998

High temperature thermal behaviors of EAF dust by coke at initial reaction stage were studied to obtain the fundamental data of EAF dust treatment process, that is Extended Arc Plasma Furnace System called RAPID system. In this study thermal behaviors including calcination of limestone, devolatilization of EAF dust itself, and reduction & devolatilization of mixture(EAF dust : coke : limestone = 80 : 10 : 10 wt.%) were investigated as functions of reaction temperature (1000~1300$^{\circ}C$) and reaction time (3~12 min), considering the 180% equivalence of carbon reduction and 1.7 bacisity for optimum reduction and melting of EAF dust in the RAPID system. Size of sample was about below 0.1 mm for these experiments. Limestone was completely calcined at above 1100$^{\circ}C$ within 1 minutes. In the case of devolatilization of EAF dust itself, weight loss of EAF dust was about 14% at 1300$^{\circ}C$ and 12 minutes, and partial sintering and melting were found in part of sample. Weight loss of mixtures increased with increasing reaction temperature and time, about 46% weight loss in it was occurred at 1300$^{\circ}C$ and 12 minutes. From these weight losses showing devolatilization and reduction of EAF dust, the treatment time of EAF dust inside.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.7-15
• /
• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.