Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thermal Stability Improvement of Ni-silicide Using Ni-Co alloy for Nano-Scale CMOSFET Technology

나노급 CMOSFET을 윈한 Ni-Co 합금을 이용한 Ni-silicide의 열안정성 개선

  • Park, Kee-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhang, Ying-Ying (Dept. of Electronics Engineering, Chungnam National University) ;
  • Jung, Soon-Yen (Dept. of Electronics Engineering, Chungnam National University) ;
  • Li, Shi-Guang (Dept. of Electronics Engineering, Chungnam National University) ;
  • Zhun, Zhong (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • 박기영 (충남대학교 공과대학 전자공학과) ;
  • 장잉잉 (충남대학교 공과대학 전자공학과) ;
  • 정순연 (충남대학교 공과대학 전자공학과) ;
  • 이세광 (충남대학교 공과대학 전자공학과) ;
  • 종준 (충남대학교 공과대학 전자공학과) ;
  • 이가원 (충남대학교 공과대학 전자공학과) ;
  • 왕진석 (충남대학교 공과대학 전자공학과) ;
  • 이희덕 (충남대학교 공과대학 전자공학과)
  • Published : 2007.06.21
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Abstract

In this paper, Ni-Co alloy was used for improvement of thermal stability of Ni silicide. The proposed Ni/Ni-Co structure exhibited wide temperature window of rapid thermal process. Sheet resistance as well as cross-sectional profile showed stable characteristics in spite of high temperature annealing up to $700^{\circ}C$ for 30min. Therefore, the proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni silicide for nano-scale CMOSFET technology.

Keywords