• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.263-267
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• 2007

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.418-419
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• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 한국전자통신학회논문지
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• 제15권4호
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• pp.665-670
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• 2020

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.

• 소성∙가공
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• 제13권4호
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• pp.319-325
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• 2004

Continuous casting machine has been experienced a rapid development to increase productivity with high casting speed and to meet consumer's strict demands for high quality. However, because most of defects and cracks are initially formed in mold and grown into surface cracks during the post process, more specific and clear investigations upon heat transfer mechanism between mold and solidified shell are necessarily needed. In this study heat transfer coefficients which shows the characteristic of heat transfer mechanism are calculated with temperatures measured in bloom mold using optimal algorithm, and thermal analysis are investigated using the calculated heat transfer coefficients. Finally uniformity of solidified shell is investigated for high carbon steel, 0.187%C from thermal analysis.

• International Journal of Control, Automation, and Systems
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• 제6권2호
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• pp.160-170
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• 2008

Temperature control of an enclosed thermal system which has many applications including Rapid Thermal Processing (RTP) of semiconductor wafers showed an input-constraint violation for nonlinear controllers due to inherent strong coupling between the elements [1]. In this paper, a constrained nonlinear optimal control design is developed, which accommodates input constraints using the linear algebraic equivalence of the nonlinear controllers, for the temperature control of an enclosed thermal process. First, it will be shown that design of nonlinear controllers is equivalent to solving a set of linear algebraic equations-the linear algebraic equivalence of nonlinear controllers (LAENC). Then an input-constrained nonlinear optimal controller is designed based on that LAENC using the constrained linear least squares method. Through numerical simulations, it is demonstrated that the proposed controller achieves the equivalent performances to the classical nonlinear controllers with less total energy consumption. Moreover, it generates the practical control solution, in other words, control solutions do not violate the input-constraints.

• 전자공학회논문지A
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• 제31A권8호
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• pp.80-90
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• 1994

The ultra shallow junction was formed by 2-step RTP. Phosphorus solid source(P$_{2}O_{5}$) was transfered on wafer surface during RTG(Rapid Thermal Glass Transfer) of which process condition was 80$0^{\circ}C$ and 60sec. The process temperature and time of the RTD(Rapid Thermal Diffusion) were 950~105$0^{\circ}C$ during 5~15sec respectively sheet resistances were measured as 175~320$\Omega$/m and junction depth and dopth and dopant surface concentration were measured as 0.075~0.18$\mu$m and 5${\times}10^{19}cm^{4}$ respectively. Ti-silicide was formed by 2-step RTA after 300$\AA$ Titanium was deposited. The 1st RTA (2nd RTA) was carried out at the temperature of $600^{\circ}C$(700~80$0^{\circ}C$) for 30 seconds (10~60 seconds) under N$_2$ ambient. Sheet resistances after 2nd RTA were measured as 46~63$\Omega$/D. Si/Ti component ratio was evaulated as 1.6~1.9 from Auger depth profile. Ti-Silicided n-p junction diode (pattern size : 400$\times$400$\mu$m) was fabricated under the RTD(the process was carried out at the temperature of 100$0^{\circ}C$ for 10seconds) and 2nd RTA(theprocess was carried out at the temperature of 750$^{\circ}C$ for 60 seconds). Leakage current was measured 1.8${\times}10^{7}A/mm^{2}$ at 5V reverse voltage. Whent the RTD process condition is at the temperature of 100$0^{\circ}C$ for 10seconds and the 2nd RTA process condition is at the temperature of 75$0^{\circ}C$ for 60 seconds leakage current was 29.15${\times}10^{9}A$(at 5V).

• 한국산업융합학회 논문집
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• 제2권1호
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• pp.69-75
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• 1999

Intending to develop a new rubber curing process using only microwave, the both the characteristics of cure and the mechanical properties of rubbers for the tire tread, for which a green styrene-butadiene compounds had been cured with 2.45 GHz microwave, have been compared with those of the custom thermal cured rubber. The unintentional hot spot formation in the compound during the microwave curing has not found where the compound has a microwave absorbing ceramic powders in 4.18 weight percents and the supplying voltage has been adjusted to 90 volts. The new microwave process accomplished preheating to 418K in a quarter of the thermal cure time. The average tensile strength of the microwave-cured rubber indicating $190kg/cm^3$ was compatible to that of the thermal cure. In conclusion, the new microwave cure had approved to be applicable in a commercial plant.

• 한국정밀공학회지
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• 제22권9호
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• pp.188-193
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• 2005

To provide the various machining materials with excellent quality and dimensional accuracy, high -speed machining is very useful tool as one of the most effective rapid manufacturing processes. However, high-speed machining is not suitable for microscale thin-walled structures because of the lack of the structure stiffness to resist the cutting force. A new method which is able to make a very thin-walled structure rapidly will be proposed in this paper. This method is composed two processes, high-speed machining and filling process. Strong workholding force comes out of the solidification of filling materials. Low-melting point metal alloys are used in order to minimize the thermal effect during phase change and to hold arbitrary shape thin-walled structures quickly during high-speed machining. To verify the usefulness of this method, we will show some applications, for examples thin -wall cylinders and hemispherical shells, and compare the experimental results to analyze the dimensional accuracy of typical parts of the structures.

• 한국정밀공학회지
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• 제15권7호
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• pp.18-25
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• 1998

A prototyping process based on the technique of selective ${\CO_2}$ laser sintering has been carried out using bronze powder. The integration of a ${\CO_2}$ laser and a working table to create the opto-mechanical system has been constructed for making the multi-layer sintering. Three dimensional rapid prototyping process which has used the 40W ${\CO_2}$ laser and bronze powder has been investigated experimentally The optimal scanning method has been found to minimize the deflection and distortion by using the thermal strain method which the laser scans in the x and v directions repeatedly. The method of spreading powder has been improved by using the rubber knife of which the flexibility causes less wave of spreading powder.