Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Property Changes of Europium-Silicate Thin Films depending on the Ambient Gas

열처리 분위기에 따른 유로퓸 실리케이트 박막의 특성 변화

  • 김은홍 (고려대학교 전자공학과) ;
  • 신영철 (고려대학교 전자공학과) ;
  • 임시종 (고려대학교 전자공학과) ;
  • 한철구 (전자부품연구원 나노광전센터) ;
  • 김태근 (고려대학교 전자공학과)
  • Published : 2007.03.01
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Abstract

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

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References

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